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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1776-1781 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous perturbed angular correlation (PAC) spectroscopy measurements on the donor indium in CdTe and its alloys have revealed several defect complexes. One defect characterized by two sets of quadrupole interaction parameters, νQ=83 MHz, η=0.08 and νQ=92 MHz, η=0.08, was observed in Hg0.8Cd0.2Te (x=0.2 MCT) and attributed to the substitutional indium–metal vacancy complex InM2+3+VM2+. A defect characterized by νQ=61±1 MHz and asymmetry parameter η between 0 and 0.19 was seen in CdTe and widely attributed to the same complex. Both of these assignments were based mainly on an observed relationship between complex formation and the loss of metal ions. In this article we present PAC measurements on 111In-doped x=0.45 MCT (Hg0.55Cd0.45Te). These measurements reveal defects having quadrupole interactions very similar to those seen previously in CdTe and in x=0.2 MCT. Two unique defect fractions f1 and f2, characterized by νQ1=60±3 MHz, η1≈0–0.2, and νQ2=87±4 MHz, η2≈0–0.15, were seen in x=0.45 MCT, in some cases simultaneously. The observation of both of these interactions in the same material—if they correspond to the defects seen in CdTe and x=0.21 MCT—precludes the possibility that they both correspond to precisely the same defect. We also observed a change in the relative fractions of these two defects with time at room temperature; the fraction f2 vanished over a period of a day, while f1 and f0 (the fraction of indium atoms in sites having cubic or higher symmetry) increased. While we cannot rule out the possibility of a slow electronic transition, at present we favor a model in which one of the interactions (probably the one near 60 MHz) corresponds to a complex in which indium is paired to a fast-diffusing monovalent metal ion like Ag+, Cu+, or Li+. © 1995 American Institute of Physics.
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry combined to the 16O(α, α) nuclear resonance (E=3.045 MeV) are used to determine the stoichiometry of Y-Ba-Cu-O superconducting samples. The oxygen depth profile is also measured at thin surface layers of the compound.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3576-3583 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of vacancies with 111In atoms is studied in Hg1−xCdxTe compounds via perturbed-angular correlation (PAC) experiments, for x=0.065, 0.21, 0.44, and 0.95. In the low-x (Hg-rich) compounds, Hg vacancies are created by heating in vacuum. For the x=0.21 alloy, we have previously shown that InC-vacC pairs (A centers consisting of an In atom on a cation site and a vacancy at a neighboring cation site) are abundant after quenching from elevated temperatures. These defects are characterized by two PAC signals with quadrupole interaction frequencies νQ1=83 MHz and νQ2=92 MHz, and asymmetry parameters η1=η2=0.08. For the x=0.065–0.44 alloys, the data presented in this article show that the fractions f1 and f2 of In atoms associated with these two frequencies vary with x according to whether one or two Hg atoms are nearest neighbors to the Te atom that is bound to the In atom and the vacancy. The data are explained by the polarizable point-ion model. For the x=0.95 compound, PAC signals are observed only when stable In is added to the compound, indicating that the presence of In creates vacancies, and that self-compensation via A centers is dominant. In this case, the well-known frequencies νQ4=100 MHz and νQ5=112 MHz are seen for samples quenched from several different temperatures between 325 and 525 °C, or slow cooled from 475 °C or below. In contrast, for a sample slowly cooled from 525 °C, the frequency νQ6=60 MHz was dominant. This signal could be due to InC−vacC pairs in which the vacancy is singly charged, or to In-group I pairs. We attribute the frequencies νQ4=100 MHz and νQ5=112 MHz, like νQ1 and νQ2, to InC-vacC pairs having doubly charged vacancies. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4023-4029 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputter-deposited Ni80Cr20 films on sputter-cleaned Si substrates contain an amorphous layer at the substrate/film interface whose composition is a mixture of all the elements present at the interface. Subsequent thermal processing at 300 °C for 30 min produces a new segregated Cr-rich amorphous layer as Ni atoms preferentially diffuse through and react with the initial amorphous layer and the silicon substrate. Further annealing results in the growth of uniform nanoscale NiSi layers, as long as the segregated a layer is sustained. The amorphous layers eventually crystallize at ∼500 °C and Kirkendall voids are observed at 550 °C. Whereas the formation of intermixed amorphous layers from metal–metal or metal–silicon systems has been reported by several authors, the segregated amorphous layer arising out of the interdiffusion and reaction between a metal alloy and Si is of both fundamental and technological interest due to its thermal stability and ability to control the silicide growth. In this work, we describe the evolution of both kinds of amorphous layers, i.e., intermixed and segregated, so as to elucidate their origins. The evolution of the two a layers is also observed when monolayers of Pt are introduced prior to NiCr deposition. In this case, the growth of the segregated amorphous layer is retarded and it dissolves earlier during thermal annealing.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 729-731 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following heat treatments of Pt encapsulated Ni80Cr20 thin films on silicon substrates at temperatures ranging from 300 to 500 °C, it has been discovered that Cr atoms segregate at the original NiCr/Si interface to form an amorphous layer, while Ni atoms diffuse into the Si to form Ni silicide. The Cr-rich amorphous layer acts as a "semipermeable membrane'' which selectively passes Ni to form a very uniform NiSi layer.
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Chemistry of materials 1 (1989), S. 220-225 
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4750-4755 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transition from Ge segregation to trapping during high-pressure oxidation of GexSi1−x alloys has been observed. The atomic fraction x of Ge was varied from 0.4% to 26%, and oxidations were performed at 740 °C under 102 atm of dry O2. It was observed that the effect of oxidation on the Ge distribution could be divided into three stages. In the initial stage of the oxidation, Ge was segregated from the growing oxide and accumulated in a Ge-rich layer at the oxide/alloy interface. For alloys with high Ge content this initial stage was very short. In the second stage of oxidation, after a critical quantity of Ge had accumulated at the interface, there was a transition from segregation to trapping of Ge in the oxide. In the third stage, the critical amount of Ge remained segregated at the interface, and the final oxide layer was Ge free. A kinetic model based on a steady-state equilibrium between the diffusive flux of Si across the Ge-rich layer and the rate of Si consumption by the oxidation reaction predicts, with reasonable agreement, the critical quantity of segregated Ge for the onset of trapping.
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 29 (1964), S. 2710-2714 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3173-3175 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon is described. Ni films 12 nm thick were evaporated on 65 nm deep amorphized surface layers. The silicidation reaction was induced by two stage thermal annealing at 360 and 400 °C, well below the solid phase epitaxial regrowth temperature for amorphous Si and the normal NiSi2 formation temperature. Rutherford backscattering with channeling, XTEM, and four-point-probe measurements were used to determine the structure, interfacial morphology, composition, and resistivity of the silicide films. After the lower temperature annealing stage a continuous layer of NiSi2 is formed with an underlying residual amorphous region located above the crystalline substrate. During a second annealing the residual amorphous areas recrystallize epitaxially with respect to the substrate via lateral silicide growth. The process leads to formation of a continuous 35 nm thick nickel disilicide layer completely confined within the original amorphous region. Silicide resistivity was 44 μΩ cm. The process may be viewed as a low-temperature process enhancement to self-aligned silicide (SALICIDE) technology since silicide growth proceeds only on preamorphized areas of the silicon substrate.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1933-1935 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we examine the interdiffusion and reaction of deposited cobalt layers during the formation of nanoscale (〈35 nm) silicide films on heavily phosphorus doped polycrystalline silicon films. The onset of morphological instability is indicated by an increase of layer resistivity. Cross-section transmission electron micrographs of high resistance films, which were formed by rapid thermal annealing at 700 °C for 30 s, show a series of disconnected "islands'' of CoSi2 with or without a highly disordered (amorphous) Si-rich top surface layer. A continuous band of voids, attributed to the Kirkendall effect and to phase transformation induced volume changes, initially appear at the CoSi/CoSi2 interface. In the highly agglomerated films, these voids separate the buried CoSi2 islands and buried polycrystalline Si from the disordered surface layer. The sequence of events is analyzed in terms of grain boundary diffusion, grain boundary grooving, and the impact of phosphorus concentration (∼1020 cm−3) on Si diffusivity.
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