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  • 1
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    RGS1 expression is associated with poor prognosis in multiple myeloma (2017)
    BMJ Publishing Group
    Details
    Publication Date: 2017-02-18
    Description: Aims Multiple myeloma (MM) is an invariably fatal disease with highly heterogeneous outcome. Because of this heterogeneity of MM, risk stratification is crucial for therapeutic decision-making. However, no immunohistochemical prognostic or predictive markers have been established yet. The expression of regulator of G-protein signalling (RGS) proteins, which desensitise G-protein-coupled receptor signalling, has been reported to be associated with the prognosis of various malignancies. Recently, our group demonstrated the importance of RGS1 in chemokine signalling in a human MM cell line and normal plasmablasts. In the present study, we explored the prognostic value of RGS1 expression in patients with MM using immunohistochemistry. Methods We evaluated RGS1 protein expression in 79 bone marrow biopsies obtained from patients with MM between 2008 and 2010 at Asan Medical Center. Correlations between RGS1 expression and clinicopathological factors were analysed. Results High RGS1 protein expression was significantly associated with poor overall survival (p=0.005). After an adjusted multivariable analysis, high RGS1 protein expression (p=0.010), high International Myeloma Working Group risk (p=0.003) and high serum lactate dehydrogenase levels (p=0.040) were significantly associated with poor outcomes. Conclusions RGS1 expression may be a prognostic marker for risk stratification and a promising target for the development of a new MM therapy.
    Print ISSN: 0021-9746
    Electronic ISSN: 1472-4146
    Topics: Medicine
    Published by BMJ Publishing Group
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  • 2
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    Activation of the GP130-STAT3 axis and its potential implications in nonalcoholic fatty liver disease (2015)
    The American Physiological Society (APS)
    Details
    Publication Date: 2015-05-02
    Description: The status of the GP130-STAT3 signaling pathway in humans with nonalcoholic fatty liver disease (NAFLD) and its relevance to disease pathogenesis are unknown. The expression of the gp130-STAT3 axis and gp130 cytokine receptors were studied in subjects with varying phenotypes of NAFLD including nonalcoholic steatohepatitis (NASH) and compared with lean and weight-matched controls without NAFLD. Gp130 and its downstream signaling element (Tyk2 and STAT3) expression were inhibited in obese controls whereas they were increased in NAFLD. IL-6 levels were increased in NASH and correlated with gp130 expression ( P 〈 0.01). Palmitate inhibited gp130-STAT3 expression and signaling. IL-6 and palmitate inhibited hepatic insulin signaling via STAT3-dependent and independent mechanisms, respectively. STAT3 overexpression reversed palmitate-induced lipotoxicity by increasing autophagy (ATG7) and decreasing endoplasmic reticulum stress. These data demonstrate that the STAT3 pathway is activated in NAFLD and can worsen insulin resistance while protecting against other lipotoxic mechanisms of disease pathogenesis.
    Print ISSN: 0193-1857
    Electronic ISSN: 1522-1547
    Topics: Medicine
    Published by The American Physiological Society (APS)
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  • 3
    Electronic Resource
    Electronic Resource
    THE EXTREME SENSITIVITY OF PARAMAGNETIC SITES TO POISONING BY DESORBED GASES EVALUATED BY THE LOW TEMPERATURE ORTHO—PARAHYDROGEN CONVERSION (1960)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 64 (1960), S. 1073-1074 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100837a501
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  • 4
    Electronic Resource
    Electronic Resource
    Multi-shot evolution of laser-induced periodic structure on the surface of polycrystalline silicon-on-insulator (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4208-4211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multi-shot evolution of laser-induced periodic structure was studied by the time-resolved optical diffraction and reflection from the surface of polycrystalline silicon-on-insulator during the accumulation of 20 ns ruby laser pulses. In contrast to the results previously reported for the bulk sample, it was observed that the channel of the periodic structure development changed during the multiple irradiations even with a fixed fluence. The observed change occurs because the energy absorption is enhanced by the presence of the periodic structure preformed by the preceding pulses, and the absorbed laser energy at the polycrystalline layer is insulated by the underlying SiO2 layer. A previously unappreciated dip structure was observed in the time-resolved diffraction and a possible explanation is suggested postulating the preferential energy deposition in the valleys of the periodic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350799
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and crystallization of low-pressure chemical vapor deposited silicon films using Si2H6 gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5427-5432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructures of silicon films deposited on SiO2 substrates by low-pressure chemical vapor deposition using Si2H6 gas were investigated and compared to those using conventional SiH4 gas by transmission electron microscopy and x-ray diffraction. The deposition rate of the Si2H6 process was about ten times higher than that of SiH4 process at low temperatures (〈550 °C). The transition deposition temperature from amorphous to polycrystalline film was found to be around 580 °C, which was similar to that of the SiH4 process. The film deposited at 600 °C was partially crystalline and had equi-axed grains with the largest average grain size of 0.3 μm while the films using SiH4 has needle-like columnar grains with smaller sizes (200 A(ring)). The x-ray diffraction analysis showed that the structural disorder to amorphously deposited Si films increases as deposition temperature decreases. The grain size in the film after crystallization at 600 °C strongly depended on the deposition temperature and the deposition rate, producing a larger grain size at a lower deposition temperature and/or at a higher deposition rate (Si2H6 deposition compared to SiH4 deposition). The apparent increase in grain size can be explained as a result of the lowered number of crystal nuclei due to a decrease in the number of pre-existing microcrystallites serving as heterogeneous nucleation seeds. When the deposition rate was lower than the critical value (approximately 2–4 nm/min), the grain size in the crystallized film decreased for both SiH4 and Si2H6 films. The maximum grain sizes were 4.5 and 0.3 μm at the deposition temperatures of 485 and 550 °C for the films using Si2H6 and SiH4 gases, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350565
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1692-1695 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of gallium nitride (GaN) layers 7.5–870 μm thick was studied with changes in temperature and excitation intensity. These layers were grown by hydride vapor phase epitaxy on a buffer layer of aluminum nitride (AlN). The photoluminescence emission consists of the shallow-donor bound exciton at 3.471 eV and the free hole-to-electron bound to a donor (possibly a nitrogen vacancy VN or oxygen) transition at 3.40–3.433 eV. The peak position varies depending on the thickness of the GaN and AlN layers. The localized donor due to donor concentration fluctuation is attributed to the variable peak position. The observed 3.269 eV emission is attributed to a donor–acceptor pair transition. The relationship between the peak and the excitation intensity is described accurately by a theoretical description which yields Ed=32 meV and Ea=230 meV, which originate, respectively, from a silicon donor and carbon acceptor. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337589
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  • 7
    Electronic Resource
    Electronic Resource
    Transition of the anisotropic magnetoresistance of permalloy films from the negative to the positive along with thickness (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5786-5788 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropic magnetoresistance of dc magnetron-sputtered Ni80Fe20 permalloy films showed the evolutionary transition of the sign, from the negative magnetoresistance to the positive magnetoresistance (PMR), as the thickness increases. A similar phenomenon with the angle between the field and the current was recently reported. In our study, however, the transition occurred in the transverse measurement at the fixed angle of 90°. Ni80Fe20 films were deposited on Si substrates in a magnetic field of 300 Oe at the ambient temperature and at the deposition rate of 4 Å/s. Because the PMR was known to be peculiar to the longitudinal measurement, it was investigated why the PMR in the transverse measurement occurred. By a vibrating sample magnetometer and magnetic force microscope, the PMR curve in the transverse measurement was found to be related to the canted hysteresis loop peculiar to the stripe domains caused by the perpendicular anisotropy. Unanticipated magnetostrictive strain by the compositional fluctuation and/or the effect of surface roughness was suggested as a plausible mechanism of the perpendicular anisotropy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369919
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  • 8
    Electronic Resource
    Electronic Resource
    Propentofylline (HWA 285), a Neuroprotective Glial Cell Modulator: Pharmacologic Profile (1997)
    Oxford, UK : Blackwell Publishing Ltd
    CNS drug reviews 3 (1997), S. 0 
    Details
    ISSN: 1527-3458
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1527-3458.1997.tb00327.x
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  • 9
    Electronic Resource
    Electronic Resource
    Manipulation of Plasma Membrane Fatty Acid Composition of Fetal Rat Brain Cells Grown in a Serum-Free Denned Medium (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 55 (1990), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Modifications of plasma membrane acyl-linked phospholipid fatty acid composition were produced by supplementing the culture medium with essential fatty acids. The plasma membrane fraction was purified by Percoll gradient centrifugation from dissociated fetal rat brain cells grown in a serum-free culture medium. Both the concentration dependence and the time course of the modifications were examined. Supplementation of the medium with essential polyunsaturated fatty acid, linolenic acid (18:3ω3) or lin-oleic acid (18:2ω6), produced incorporation of the elongated and desaturated products of ω3 or ω6 class, respectively, i.e., the incorporation was class specific. Within each class, the most unsaturated and elongated members, i.e., terminal members, were preferentially incorporated until they reached a maximum concentration within 6–7 days. At higher concentrations of supplemented fatty acids, additional class specific incorporation in plasma membrane was produced by an increase in the concentration of intermediate members. At the same time, the concentration of monounsaturated fatty acids declined and that of saturated fatty acids remained unchanged. The modifications in fatty acid composition were reversible, with the time course similar to that of incorporation. The total plasma membrane phospholipid and sterol contents did not change with alterations of fatty acid composition, but did change with time in culture. This preparation should prove useful for investigating the role of polyunsaturated fatty acids in brain cell functions, including neuronal excitability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1990.tb04936.x
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  • 10
    Electronic Resource
    Electronic Resource
    Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3904-3909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300 °C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380 °C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge–Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380 °C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363347
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