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  • 1
    Electronic Resource
    Electronic Resource
    Self-organization of (In,Ga)As/GaAs quantum dots on relaxed (In,Ga)As films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2164-2166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the synthesis of (In,Ga)As/GaAs quantum dots on strain-relaxed (In,Ga)As epitaxial films. It is found that the incorporation of a relaxed prelayer provides a systematic and effective method for controlling the dot distribution and emission wavelength. The robustness of the optical properties of quantum dots to dislocations may provide a method for engineering the band structure of quantum dot devices. We demonstrate, for example, that longer band-to-band emission wavelengths can be obtained by simply decreasing the residual strain in the relaxed films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122410
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  • 2
    Electronic Resource
    Electronic Resource
    Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1937-1939 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the device performance of normal-incidence (In, Ga)As/GaAs quantum dot intersubband infrared photodetectors. A primary intersubband transition peak is observed at the wavelength of 13 μm (E0→E1) and a secondary peak at 11 μm (E0→E2). The measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. A peak detectivity of 1×1010 cm Hz1/2/W at 13 μm was achieved at 40 K for these devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122328
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  • 3
    Electronic Resource
    Electronic Resource
    Design of the control scheme of a concentration-controlled recycle reactor (1988)
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 27 (1988), S. 86-93 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie00073a017
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  • 4
    Electronic Resource
    Electronic Resource
    A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1456-1459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable temperature photoluminescence (PL) measurements for In0.3Ga0.7As(6 nm)/GaAs(34 nm) quantum dot superlattices with a period of 20 and an In0.3Ga0.7As(6 nm)/GaAs(34 nm) reference single quantum well have been conducted. It is found that the temperature dependence is different between the quantum dots and the reference single quantum well. The PL peak energy of the single quantum well decreases faster than that of the quantum dots with increasing temperature. The PL peak energy for the InGaAs/GaAs quantum dots closely follows the InAs band gap in the temperature range from 11 to 170 K, while the PL peak energy for the InGaAs/GaAs quantum well closely follows the GaAs band gap. In comparison with InAs/GaAs quantum dots, the InGaAs/GaAs quantum dots are more typical as a zero-dimensional system since the unusual PL results, which appear in the former, are not obvious for the latter. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370912
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  • 5
    Electronic Resource
    Electronic Resource
    A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2719-2721 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical and electrical properties of a five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector. A primary intersubband transition peak is observed at the wavelength of 10.2 μm and a secondary one at 9.4 μm. Excellent electron transport and peak detectivity of 7×109 cm Hz1/2/W are achieved at 30 K, with a low bias responsivity of up to 70 mA/W at 0.6 V. We believe that an observed avalanche gain process is initiated by intersubband absorption in the quantum dots. The maximum responsivity due to this avalanche multiplication process is about 4 A/W at a bias of 1.0 V. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125127
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  • 6
    Electronic Resource
    Electronic Resource
    Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3537-3539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that by increasing the amount of (In, Ga)As deposit in a quantum dot layer, the intersublevel absorption wavelength for (In, Ga)As/GaAs quantum-dot infrared photodetectors can be blue-shifted from 15 to 10 μm while the photoluminescence peak is red-shifted. We directly compare the measured energy spacing between intersublevels obtained from infrared absorption spectroscopy with those obtained from photoluminescence spectroscopy. We find that the intersublevel energy spacing determined from absorption measurements is much larger than that obtained from the photoluminescence measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126699
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  • 7
    Electronic Resource
    Electronic Resource
    Photovoltaic quantum-dot infrared detectors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3301-3303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the operation of photovoltaic quantum-dot infrared detectors fabricated from (In, Ga)As/GaAs heterostructures. These detectors are sensitive to normal incidence light. At zero bias, we obtain a low-temperature (78 K) peak detectivity of 2×108 cm Hz1/2/W, with a responsivity of 1 mA/W at a wavelength of 13 μm for one of the devices. The photovoltaic effect in our detectors is a result of the intrinsic inversion asymmetry of the band structure of self-formed quantum dots. A compensation voltage of 18 mV is measured. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126613
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  • 8
    Electronic Resource
    Electronic Resource
    Long period two-dimensional gratings for 8–12 μm quantum well infrared photodetectors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7169-7171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By considering all possible high order diffracted waves, the authors investigate the spectral response of two-dimensional gratings for quantum well infrared photodetectors (QWIPs). A new method is proposed that using long period gratings may improve grating quality and reduce the resulting cross talk in grating-coupled QWIPs. A sensitivity analysis indicates that the influence of variation of the grating constant on the coupling efficiency is less sensitive for the long period gratings than for the short ones. A large coupling efficiency has been demonstrated for long period gratings. The calculated wide grating response spectra are in good agreement with the experiment result. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363742
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  • 9
    Electronic Resource
    Electronic Resource
    Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2440-2442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a 20 period dislocation-free InGaAs/GaAs quantum dot superlattice which is self-formed by the strain from the superlattice taken as a whole rather than by the strain from the strained single layer. The island formation does not take place while growing the corresponding strained single layer. From the variation of the average dot height in each layer, the strain distribution and relaxation process in the capped superlattice have been examined. It is found that the strain is not uniformly distributed and the greatest strains occur at two interfaces between the superlattice and the substrate and the cap layer in the capped superlattice. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118896
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  • 10
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    Reduction of nonspecific binding for cellular imaging using quantum dots conjugated with Vitamin E (2014)
    Wiley-Blackwell
    Details
    Publication Date: 2014-01-24
    Description: Quantum dots (QDs) as luminescence probes play an important role in the field of life sciences and medicine in recent decades. However, hydrophobic QDs have many limitations in applications for biological imaging such as insolubility in aqueous solutions and nonspecific binding to cellular membranes and so on. This paper describes the design and synthesis of D- □ -tocopheryl polyethylene glycol 3350 succinate (TPGS 3350 ) -conjugated QDs (TPGS 3350 -QDs) NPs for effective reduction of nonspecific cellular binding of QDs for biological imaging. TPGS 3350 with PEG 3350 group was used in order to enhance the stabilization and water solubility of QDs, and reduce nonspecific cellular binding of NPs with the function of long-chain PEG 3350 . We have demonstrated that TPGS 3350 -QDs NPs show good stability and dispersion in aqueous solutions and that small amount of TPGS 3350 -QDs NPs were nonspecific bound with MCF-7 cells in comparison of MAA-coated QDs NPs, which confirmed TPGS 3350 can efficiently reduce nonspecific cellular binding due to the effect of PEG 3350 in TPGS 3350 . The nonspecific binding of TPGS 3350 -QDs NPs was also found to be much lower than that of TPGS-QDs NPs. The developed TPGS 3350 -QDs NPs in this study could be a promising tool for molecular imaging such as in vivo cell trafficking studies. © 2014 American Institute of Chemical Engineers AIChE J, 2014
    Print ISSN: 0001-1541
    Electronic ISSN: 1547-5905
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Published by Wiley-Blackwell on behalf of The American Institute of Chemical Engineers (AIChE).
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