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  • 1
    Electronic Resource
    Electronic Resource
    A Monte Carlo study of many-valley effects on the temporal electron transient transport in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4938-4945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Six-valley effects on electron transient transport in silicon (Si) are investigated by temporal Monte Carlo simulations. The effects on velocity overshoot, carrier repopulation, and average electron energy are studied using two well-known models of Si. Substantial differences in transient carrier repopulation and average energy are found using the two models. For transient carrier velocity, the two models give essentially the same response. A simple one-valley model for Si with optimized parameters is presented for saving computer time when accuracy is not strictly demanded. The significance of these results is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349040
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Intersubband absorption of silicon-based quantum wells for infrared imaging (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1573-1575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the 10-μm intersubband absorptoin in quantum wells made of the silicon-based system, Si/Si1−xGex. The necessary details of the effective-mass anisotropy are included in our analysis. We find that it is readily possible to achieve an absorption constant of order of 104 cm−1 in Si quantum wells with current doping technology. For [110] and [111] growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341788
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  • 3
    Electronic Resource
    Electronic Resource
    Advantages of an indirect semiconductor quantum well system for infrared detection (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3253-3258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors. We find that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. We have calculated the 10-μm intersubband absorption in quantum wells made of the silicon-based system Si/Si1−xGex. We find that it is readily possible to achieve an absorption constant of the order of 104 cm−1 in these Si quantum wells with current doping technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342679
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    Paper (German National Licenses)
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