Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 3726-3728
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The diffusion coefficient of oxygen in heavily antimony doped Czochralski Si was measured in the temperature range 950–1100 °C by using secondary ion mass spectroscopy (SIMS). The diffusion coefficient, obtained from SIMS oxygen concentration profiles in samples submitted to out diffusion, shows no dependence on antimony concentration. The combined data give an activation energy of 2.68 eV, which is in good agreement with published results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346311
Permalink
|
Location |
Call Number |
Limitation |
Availability |