Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 1861-1863
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaAs/GaAlAs laser diodes with reactive ion etched facets have been demonstrated for the first time with high output powers (5 W from 100-μm-wide apertures), high output power density (15 MW/cm2), and high slope efficiencies (66%) in junction-up configuration under quasi-cw operation. Mirror etching was performed in a pure SiCl4 gas environment by maintaining a low background pressure and gas pressure. High quality etched facets have been achieved with almost no scattering loss.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104039
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