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  • 1
    Electronic Resource
    Electronic Resource
    Optical interferometric effects in photofragmentation of physisorbed molecules (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 722-725 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation yield at the top of a condensed CH3Br layer on GaAs(110) is observed to oscillate as the layer thickness increases. The oscillation is successfully explained and fitted by optical interference theory. The method can reveal the dissociation mechanism and the molecular arrangement near a condensed layer surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463571
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  • 2
    Electronic Resource
    Electronic Resource
    Ultraviolet-light-induced oxide formation on GaAs surfaces (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7951-7961 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a study of deep-ultraviolet-light-enhanced (4.1〈hν〈5.1 eV) oxygen reactions on GaAs from submonolayer to several monolayers coverage. The reaction is nonthermal and does not involve gas-phase excitation or dissociation of O2. Our experiments show a distinct wavelength and coverage dependence for the photoenhancement. X-ray photoelectron spectroscopy has been used to examine the chemical nature of the oxygen adsorbate and the GaAs oxides in order to find intermediate reaction species and evidence of the reaction pathways. The roles of photons and photogenerated carriers in the reaction enhancement mechanism are discussed. The results indicate that a mechanism based on photoemission of electrons into the growing oxide film is most in accord with the experimental observations. Such electron emission would increase the field-driven transport of oxygen to the GaAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459325
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray scattering from magnetic, rough surfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4619-4621 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present expressions for the resonant magnetic x-ray scattering from rough surfaces; using our formulas we analyze the structural and magnetic roughnesses, as well as the correlation between them. We demonstrate that the leading contribution to the difference in the diffuse scattering between left- and right-circularly polarized light for a rough surface with in-plane magnetization vanishes unless the structural and magnetic roughnesses are correlated. The effects of magnetic domain structure and magnetic dead layers on the surface scattering are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370426
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  • 4
    Electronic Resource
    Electronic Resource
    Ultraviolet photon-induced interaction of Cl2 with GaAs(110): Dissociation by means of charge transfer (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 1590-1601 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have studied the UV photon-induced interaction of molecular chlorine with a well-defined GaAs(110) surface under ultrahigh vacuum (UHV) conditions. Without illumination, chlorine was found to adsorb both molecularly and dissociatively at 85 K. Illumination of a molecular chlorine-covered surface at 85 K with 193, 248, and 351 nm radiation led to the desorption of Cl atoms and to the formation of AsCl3. We suggest that the surface reaction, that is responsible for the AsCl3 formation, is initiated by molecular chlorine dissociation. While direct absorption by an individual Cl2 molecule may be the cause for the chlorine dissociation at 351 nm, we propose an intermolecular charge-transfer absorption within the condensed Cl2 overlayer for the cases of 248 and 193 nm. Support for this mechanism comes from the dependence of time-of-flight distributions and AsCl3 coverages on the molecular chlorine surface coverage, on the laser wavelengths, and on the use of different substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462143
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  • 5
    Electronic Resource
    Electronic Resource
    Surface photochemistry of divalent metal alkyls on SiO2 (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 1643-1652 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Metal-alkyl molecules adsorbed on chemically prepared silicon surfaces have been studied using infrared total-internal reflection and ultraviolet transmission spectroscopies, temperature-programmed desorption spectroscopy (TPD), and mass spectroscopy of laser induced desorption (LID) products. For chemisorbed species, the surface hydroxyl groups have been shown to be the prime adsorption sites. In addition, we determined the identity of the chemisorbed species and their fragments under ultraviolet photodissociation. Surface photodissociation was observed to be strongly wavelength dependent at 193 and 248 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459968
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  • 6
    Electronic Resource
    Electronic Resource
    Permanent magnet film magneto-optic waveguide isolator : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6286-6288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent advances in high-coercivity planar-magnetization film magnets and Bi-YIG (bismuth-substituted yttrium iron garnet) film technology have opened up the possibility of fabricating very small magneto-optic devices. In this article we demonstrate that these two technologies can be brought together to fabricate a high performance waveguide magneto-optic isolator for use in integrated optical circuits. The device operates at 1.55-μm wavelength and consists of a waveguide etched into a Bi-YIG film whose magnetization is saturated by a 22-μm-thick TbCu7-type SmCo magnet with a coercivity of 4 kOe. Isolation ratios of 25 dB have been obtained in the wavelength region between 1490 and 1555 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355426
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic force microscopy of single-domain single-crystal iron particles with uniaxial surface anisotropy : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5851-5853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lithographic patterning techniques have been used to fabricate arrays of submicron particles from a [110] single-crystal iron thin film with a strong uniaxial surface anisotropy and with an easy axis of magnetization lying in the [001] direction (in the plane of the film). Magnetic force microscopy images indicate that these islands are single domain over a wide range of island shapes and sizes. The uniaxial surface anisotropy is stronger than the shape anisotropy for the island geometries used, so the easy axes of the islands all lie roughly in the [001] direction, regardless of the island shape. Magnetic force images were also taken as both the magnetic tip and sample were subjected to a gradually increasing externally applied field. This technique allows us to monitor the magnetization reversal of individual islands and provides a direct measure of their switching fields. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362146
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  • 8
    Electronic Resource
    Electronic Resource
    Second-order magneto-optic effects in anisotropic thin films (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6189-6189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The signal measured in a magneto-optic Kerr effect (MOKE) experiment is normally assumed to be proportional to the component of the magnetization (M) along a certain axis. We have observed significant effects from the M2 term in the magneto-optic response (i.e., in the rotation and/or ellipticity, which can be thought of as the real and imaginary parts of the same quantity) from films with in-plane magnetization and in-plane magnetic anisotropy. These films were: epitaxial Fe(110)/Mo(110) bilayers and multilayers, thin Fe films with ion-bombardment induced anisotropy, Co(110) thin films, and NiFe films with anisotropy induced with a field during deposition. In all of these films, the in-plane anisotropy created a coherently rotating magnetization (as evidenced by measurement of the component of the magnetization perpendicular to the applied field) that contributed a large M2 term to the magneto-optic response when an external field was applied close to parallel to the hard axis of the film. The M2 term in the magneto-optic response changed sign as H was rotated through the hard axis and reached a minimum when H was applied nearly parallel (±0.5°) to the hard axis, thus providing a sensitive indication of the location of the sample's hard axis. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362067
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  • 9
    Electronic Resource
    Electronic Resource
    Erratum: "Permanent magnet film magneto-optic waveguide isolator'' [J. Appl. Phys. 75, 6286 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1333-1333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359611
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  • 10
    Electronic Resource
    Electronic Resource
    GaAs-oxide removal using an electron cyclotron resonance hydrogen plasma (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1143-1145 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface chemistry of GaAs-oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x-ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen-plasma oxide reduction are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104397
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