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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6972-6979 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial distributions of the cathodoluminescence (CL) emissions from thin ZnS films on GaAs(100) have been examined by the low-temperature CL measurement system combined with a transmission electron microscope (TEM). The correlation between these CL emissions and structural defects were studied by comparing the monochromatic CL images with the TEM images for both plan-view and cross-sectional observations. It is found that the neutral acceptor–bound exciton associated emission (A0,X) and the free-electron-to-ionized acceptor transition emission (e,A) are affected by the stacking fault distribution. The localization of the emission due to the deep-level emission transition near the interface suggest the diffusion of Ga atoms from the GaAs substrate. The characteristic distributions of the CL emission regions can be explained by considering the competitions among the recombination channels of those radiative processes for each type of an excess carrier, an electron, or a hole. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3919-3921 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam epitaxial growth of undoped ZnS layers on Si (111) is reported. Reflection high energy electron diffraction observations of grown films indicated that the optimum growth conditions necessary to obtain good crystallographic quality ZnS films exhibiting surface reconstruction are a substrate temperature of 300 °C and a molecular-beam flux ratio of 1. The layer growth rate depends on both substrate temperature and the molecular-beam flux ratio of Zn to S, JZn/JS. It was found that the growth rate became constant for JZn/JS ratios larger than 1. For the substrate temperatures larger than 400 °C the growth rate was found to decrease to nearly zero, abruptly.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3508-3511 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic quality and the surface morphology of ZnS films on (100) Si substrates by molecular-beam epitaxy are profoundly dependent on the substrate temperature Ts. When the Ts was below 300 °C, single crystalline films with twins grew along 〈100〉 directions in the initial stage of growth. However, when the film thickness was increased, the growth orientation changed from 〈100〉 to two 〈511〉 directions of the Si substrate. Namely, the relation of growth orientations between overgrowth and substrate is ZnS(111)(parallel)Si(511). When the Ts was set between 340 and 370 °C, the grown films were single crystal with twins appearing initially and grew with a 〈100〉 orientation, but decreased with increasing film thickness. Especially in the case of Ts=340 °C, the ZnS film became best crystallized and exhibited the twin-free streaky pattern in the reflection high-energy electron diffraction pattern with a smooth surface morphology.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 30 (1992), S. 929-932 
    ISSN: 0887-624X
    Keywords: protein adsorption ; phospholipid polymer ; membrane ; biocompatibility ; biosensor ; permeability ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    New York : Wiley-Blackwell
    Journal of Polymer Science: Polymer Physics Edition 13 (1975), S. 1577-1589 
    ISSN: 0098-1273
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The steady shear viscosity η(k) and the stress decay function \documentclass{article}\pagestyle{empty}\begin{document}$ \tilde \eta \left({t,k} \right)$\end{document} (the shear stress divided by the rate of shear k after cessation of steady shear flow) were measured for concentrated solutions of polystyrene in diethyl phthalate. Ranges of molecular weight M and concentration c were 7.10 × 105 to 7.62 × 106 and 0.112-0.329 g/cm3, respectively. Measurements were performed with a rheometer of the cone-and-plate type in the range 10-4 〈 k 〈 1 sec-1. The Cox-Merz relation η(k) = |η*(ω)|ω=k was tested with the experimental result (|*(ω)| is the magnitude of the complex viscosity). It was found to be applicable to solutions of relatively low M or c but not to those of high M and c. For the latter η(k) began to decrease at a lower rate of shear than |η*(ω)|ω=k did; the Cox-Merz law underestimated the effect of rate of shear. The stress decay function was assumed to have a functional form \documentclass{article}\pagestyle{empty}\begin{document}$\tilde \eta \left( {t,k} \right) = \sum {\eta _p \left( k \right)e^{ - t/\tau p\left( k \right)} } $\end{document} where τ1 〉 τ2 〉 …, and the values of τ1, τ2 η1 and η2 were determined for some solutions. The relaxation times τ1 and τ2 were found to be independent of k and equal to the relaxation times of linear viscoelasticity. At the limit of k → 0, η1 and η2 were approximately 60 and 20-30%, respectively, of η and the non-Newtonian behavior was due to large decreases of η1 and η2 with increasing k. It was shown that η1(k) may be evaluated from the relaxation strength G1(s) for the longest relaxation time of the strain-dependent relaxation modulus with a constitutive model for relatively high c-M systems as well as for low c-M systems.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
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