ISSN:
0142-2421
Keywords:
sputtering
;
compound semiconductors
;
quantitative AES
;
sputter correction factor
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Quantification in Auger electron spectroscopy using the relative elemental sensitivity method with matrix correction factors is a popular method. Matrix factors for bombardment-induced compositional changes and topography development are, however, seldomly used. The main emphasis of this study is to find a sputter correction factor for bombardment-induced surface compositional changes in compound semiconductors after low-energy argon ion bombardment. For this purpose several analytical preferential sputter models are employed. In these models several approximations for the surface binding energy are also used. The calculated factors are compared with experimental averages of 13 binary compound semiconductors bombarded with argon ions. Based on the Sigmund preferential sputter model, a generalized formula for the sputter correction factor for room-temperature AES and XPS analyses with readily available parameters is given byKABY=(MB MA)0.29(2XBΔ HBa+XAΔ HAa+XAΔ HBa2XAΔ HAa+XBΔ HAa+XBΔ HBa)0.71where Mi is the atomic mass of atomic species i, ΔHia is the heat of atomization (which is equal to the heat of sublimation) and Xi is the measured surface composition after sputtering. In the context of the presented models, this study also shows that mass effects are more important than chemical binding effects in the bombardment-induced compositional changes in compound semiconductors. The analysis also shows that elemental sputter yield ratio approximation for the sputter correction factor is not valid. © 1998 John Wiley & Sons, Ltd.
Additional Material:
2 Ill.
Type of Medium:
Electronic Resource
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