Publication Date:
2013-10-10
Description:
Final results for a comprehensive radiation hardness evaluation of a high performance, low cost, 130 nm SiGe BiCMOS technology are presented. After a survey of several available SiGe technologies, one was chosen in terms of performance, power consumption, radiation hardness, and cost and it is presented as a suitable technology for the future upgrades of the ATLAS detector of the High Luminosity LHC. Bipolar devices of different sizes and geometries have been evaluated, along with a prototype Front-End readout ASIC designed for binary readout of silicon microstrip detectors. Gamma, neutron and proton irradiations have been performed up to the expected doses and fluences of the experiment.
Electronic ISSN:
1748-0221
Topics:
Physics
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