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  • 1
    Electronic Resource
    Electronic Resource
    Enthalpies of decomposition and heat capacities of ethylene oxide and tetrahydrofuran hydrates (1982)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 4175-4178 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100218a017
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  • 2
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown an undoped GaAs layer with a low electron concentration on Si by metalorganic chemical vapor desposition (MOCVD). The back and side edges of the Si substrate were covered with a Si3N4/SiO2 stacked layer to suppress Si incorporation into GaAs by the gas phase transport mechanism during the MOCVD growth. A 3-μm-thick undoped GaAs layer with an electron concentration of 3×1014 cm−3, as low as the electron concentration of a GaAs layer grown on a GaAs substrate, was grown on the Si substrate even at 750 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103796
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  • 3
    Electronic Resource
    Electronic Resource
    Perhaloketones. XIV. 7,7-Bis(trifluoromethyl)quinonemethide (1968)
    s.l. : American Chemical Society
    The @journal of organic chemistry 33 (1968), S. 3306-3308 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01272a057
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  • 4
    Electronic Resource
    Electronic Resource
    New mechanism for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1674-1676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102232
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of background doping and implant damage on the diffusion of implanted silicon in GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of Si in GaAs is studied using implanted Si in undoped GaAs, implanted Si in Se-, Si-, and Zn-doped GaAs, and grown-in Si in epitaxial layer structures. No diffusion is observed in the undoped and Zn-doped GaAs cases, a moderate level is observed in the Si-doped case, and a significant amount is found for the Se-doped and nonimplanted Si-doped epitaxy cases. These results indicate that the diffusion is controlled by a Fermi level mechanism (probably via ionized gallium vacancies) and that implant damage inhibits diffusion by keeping the electron concentration and/or the ionized gallium vacancy concentration low.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102769
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  • 6
    Electronic Resource
    Electronic Resource
    Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2090-2092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the Si substrates and the growth temperature, and do not appear to depend on the location of the Si substrates relative to the flow direction of the carrier gases and the type of reactor used for the growth, i.e., horizontal or vertical. Reduction in electron concentrations is observed when Si substrates are covered with passivating layers of either SiO2 or Si3N4. These results provide evidence of a gas phase reaction and transport of Si to the growing GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102092
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  • 7
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction apparatus for metal hydride studies (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1590-1592 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An easily dismountable arrangement for in situ x-ray diffraction studies of metal/hydrogen reactions (and other gas/solid reactions) which is usable on any open type of diffractometer is described. Gas pressures to 5.0 MPa (50 atm) and sample temperatures in the range 190–575 K have been used successfully.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138589
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  • 8
    Electronic Resource
    Electronic Resource
    Assessment of oxidant stress in allergic asthma by measurement of the major urinary metabolite of F2-isoprostane, 15-F2t-IsoP (8-iso-PGF2α) (2001)
    Oxford, UK : Blackwell Science, Ltd
    Clinical & experimental allergy 31 (2001), S. 0 
    Details
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Asthma is a chronic inflammatory disease of the airways which may involve an oxidant injury to the lung. Assessment of oxidant stress is difficult in vivo, but measurement of F2-isoprostanes (F2-IsoPs), free radical-catalysed products of arachidonic acid, appears to offer a reliable approach for quantitative measurement of oxidative stress status in vivo. We have recently developed a mass spectrometric assay for 2,3-dinor-5,6-dihydro-15-F2t-IsoP (15-F2t-IsoP-M), the major urinary metabolite of the F2-IsoP, 15-F2t-IsoP (8-iso-PGF2a). Measurement of the urinary excretion of this metabolite offers a reliable index of oxidative stress status in vivo that has advantages over measuring unmetabolized F2-IsoPs in urine and plasma.To assess the occurrence of oxidative stress in patients with atopic asthma following allergen exposure in vivo by measuring the urinary excretion of 15-F2t-IsoP-M.Analysis of 15-F2t-IsoP-M by GC-NICI-MS in nine mild atopic asthmatics following inhaled allergen provocation and four asthmatic subjects after inhaled challenge with methacholine.Urinary excretion of 15-F2t-IsoP-M increased at 2 h after allergen challenge and remained significantly elevated in all urine collections during the subsequent 8-h period of the study compared to the baseline value (anova, and Student–Newman–Keuls multiple comparisons test). No increase in the urinary excretion of 15-F2t-IsoP-M occurred after inhalation of methacholine.Allergen challenge causes an oxidant injury in human atopic asthmatics. 15-F2t-IsoP-M is a valuable marker of oxidant stress in vivo.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2222.2001.01055.x
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  • 9
    Electronic Resource
    Electronic Resource
    A new index for measuring extrinsic stain in clinical trials (1977)
    Oxford, UK : Blackwell Publishing Ltd
    Community dentistry and oral epidemiology 5 (1977), S. 0 
    Details
    ISSN: 1600-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: abstract A staining index has been proposed which is simple to use clinically and yet is sensitive enough to detect small changes in staining levels between different groups. Accurate scale drawings from An atlas of tooth form were reproduced. Outlines of the labial and lingual surfaces of all eight incisor teeth were enlarged to scale (magnification × 4) and each tooth face divided into 4-mm squares. All areas of extrinsic stain were drawn by the examiner on to the grid system. This method has been tested in three clinical trials and the reproducibility investigated. In 161 duplicate examinations a total of 1,830 stained squares were scored by one examiner, compared with 1,853 squares by the second examiner; the reproducibility ratio was 0.155 and the coefficient of correlation was 0.956. The method proved sufficiently sensitive to record differences in staining levels in groups using two dentifrices; one was a normal commercial product with an abrasivity against dentin approximately two-thirds that of the other paste. The proposed Extrinsic Stain Index provides data which can be analyzed by applying parametric or nonparametric tests.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0528.1977.tb01622.x
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  • 10
    Electronic Resource
    Electronic Resource
    Errors in diagnosis of approximal caries on bitewing radiographs (1975)
    Oxford, UK : Blackwell Publishing Ltd
    Community dentistry and oral epidemiology 3 (1975), S. 0 
    Details
    ISSN: 1600-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The number of overlapped and unreadable surfaces occurring on bitewing radiographs of 1,417 children participating in a clinical trial was recorded. Of erupted surfaces, only 73.3 % were completely visible to both participating examiners. Interexaminer and intraexaminer reproducibility ratios were calculated according to the F.D.I, recommendations. The ratios obtained in the present study ranged from 0.06 to 0.36. Almost 57 % of approximal cavities were diagnosed on radiographic examination only: 21 % were diagnosed clinically, but were not apparent on the radiographs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0528.1975.tb00324.x
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