Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 854-856
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
After Au diffusion, carrier concentration profiles in low O (float zoned), lightly doped, p-type Si were found to be a function of heat treatment received by the Si crystal prior to Au deposition. We interpret anomolous carrier concentration profiles in terms of vacancy diffusion and clusters of excess vacancies retained from the crystal growth processing. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113409
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