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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Contact dermatitis 20 (1989), S. 0 
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Contact dermatitis 18 (1988), S. 0 
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1612-4766
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Description / Table of Contents: Zusammenfassung Wurden die ektoparasitischen Raupen vonEpiricania melanoleuca auf adulten Weibchen der Zuckerrohr-Zikade,Pyrilla perpusilla aufgezogen, vergrößerte sich die Zahl und Lebensfähigkeit der Eier, die von den daraus resultierenden Faltern abgelegt wurden. Das Ergebnis wird im Hinblick auf einen Einsatz des Parasitoiden zur biologischen Bekämpfung des Schädlings erörtert.
    Notes: Abstract Rearing ofEpiricania melanoleuca (Fletcher) on adult females ofPyrilla perpusilla (Walker) augmented the productivity of the former, which is an effective nymphal and adult ectoparasitoid of the latter, in terms of yield of total and viable eggs. The applied value of this finding in field biocontrol program is highlighted.
    Type of Medium: Electronic Resource
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  • 4
    Publication Date: 2016-08-25
    Description: In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO x layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O 2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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