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  • 1
    Electronic Resource
    Electronic Resource
    Optical gain measurements based on fundamental properties and comparison with many-body theory (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2945-2952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high accuracy measurements of gain, loss, and transparency energy in long-wavelength semiconductors based on a hybrid approach using the fundamental relationship between the gain and the spontaneous emission spectra. Independent measurements of optical gain, transparency energy, and loss show the accuracy and validity of this technique. These results are compared with those obtained by the non-Markovian gain model with many-body effects under the spontaneous emission transformation method. It is found that the hybrid approach for the gain spectrum alleviates many of the problems related to the poor signal to noise ratio in the amplified-spontaneous emission near and below the band edge. The theoretical spectra compare well with the measured spectra for both the transverse electric and transverse magnetic polarizations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371153
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of temperature sensitivity in semiconductor lasers using gain and spontaneous emission measurements (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 796-798 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A consistent method to characterize the temperature dependence of bulk InGaAsP semiconductor laser diodes is presented. Independent measurements of the gain and spontaneous emission spectra are conducted, and the spectra are calibrated using their fundamental relationship. This procedure will provide a unique approach to extract precise values for laser diode parameters such as quasi-Fermi level separation, peak modal gain, and total loss. The radiative and nonradiative current densities can then be calculated as a function of temperature and injection current. By comparing the measured data with a theoretical model, the carrier density is calculated. Important phenomena contributing to the strong temperature dependence of long-wavelength bulk InGaAsP/InP lasers are highlighted. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118225
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  • 3
    Electronic Resource
    Electronic Resource
    Four-wave mixing in a distributed-feedback laser (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1360-1362 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed study of four-wave mixing in a long-wavelength distributed-feedback (DFB) laser for both nearly degenerate and nondegenerate pump-probe detunings. We characterize scaling laws of the power dependence of multiple conjugate waves on the pump and probe power levels for the nearly degenerate case. We also measure the output ratio of the probe and conjugate waves up to a detuning of 500 GHz and report the cavity enhancement of the DFB laser on this output ratio. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118579
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