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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of semiconductor lasers with hydrostatic pressure (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 737-739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependence of the stimulated emission of a 1.3 μm In1−xGaxAsyP1−y (y=0.6) buried heterostructure laser has been measured up to 2.5 GPa. In this pressure range the laser output was tuned over 200 nm. The laser output energy varied linearly with pressure at a rate of (80±3) meV/GPa, corresponding to variation of the direct band gap of the InGaAsP active layer with pressure. From the measured energy shift and from calculations of the fractional volume change in the active layer for the strain conditions of the epilayer, a hydrostatic deformation potential of (−5.7±0.1) eV was obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355242
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  • 2
    Electronic Resource
    Electronic Resource
    Pressure-induced changes in the crystal structure and electrical properties of bulk InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1658-1661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction spectra and the electrical properties of bulk InP and InGaAs have been obtained in quenched samples after compressing them into metallic phases above 14 GPa. The x-ray diffraction spectrum of InP was similar to that of the zinc-blende phase, although the [200] reflection was missing and an extra line was observed near the [220] reflection. Transport measurements showed about three orders of magnitude decrease in carrier concentration from 1016 cm−3 before pressurization to 1013 cm−3 after pressurization. The electron mobility was similar to that found for X-conduction-band minima, and the resistivity was increased by about four orders of magnitude. The photoconductivity edge of the band-to-band absorption was quenched.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344381
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  • 3
    Electronic Resource
    Electronic Resource
    Impedance independent optical carrier lifetime measurements in semiconductor lasers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 4247-4248 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a novel, simple, and accurate approach to determining the differential carrier lifetime in semiconductor lasers. This technique has lower crosstalk, fewer fitting parameters, and allows the lifetime to be extracted from data collected at lower frequencies than previous methods. These characteristics make our method very useful, particularly in quantum well lasers where additional high frequency poles/zeros due to capture, escape, and transport may affect the extraction of the carrier lifetime. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149239
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  • 4
    Electronic Resource
    Electronic Resource
    Generation of synchronized trains of picosecond laser pulses at two wavelengths in a single-cavity synchronously mode-locked dye laser (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 259-260 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Synchronized trains of 5 ps pulses at two wavelengths were generated in a single-cavity synchronously pumped dye laser containing a mixture of two dyes in a single jet and intracavity spatial masking for frequency selection. The utilization of this dual wavelength dye laser to monitor the relaxation of photoexcited carriers in multiple quantum wells was demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144392
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  • 5
    Electronic Resource
    Electronic Resource
    Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 640-642 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the emission characteristics of InGaN/GaN quantum wells under hydrostatic pressure are strongly influenced by the built-in piezoelectric field. The dominant role of the piezoelectric field is established from the dramatic increase of the photoluminescence decay time with pressure and the dependence of the linear pressure coefficient of the photoluminescence peak energy on Si doping in the barriers and excitation intensity. A nonlinear increase of the piezoelectric field with hydrostatic pressure determined from these experiments is explained as being due to a significant dependence of the InGaN piezoelectric constants with strain. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343479
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2659-2661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on the temperature dependence of the intrinsic recombination coefficients in long-wavelength quantum-well lasers. Unlike previous studies, we obtain the intrinsic recombination coefficients from carrier lifetime measurements with a correction for the carrier population in the barrier and separate confinement heterostructure region. Our results show that this carrier population not only affects the value of the recombination coefficients obtained but also their temperature dependence. We measure a significant increase in the intrinsic Auger coefficient with temperature indicating that the frequently reported temperature insensitivity of this coefficient is likely due to carriers spilling out of the wells at elevated temperatures and not an intrinsic property of the Auger process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126435
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3201-3203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that carrier transfer to the indirect X level in the confining layer is responsible for most of the substantial decrease in the efficiency of AlGaInP light-emitting diodes (LEDs) operating at short wavelengths. Carrier transfer to the confining X level was obtained by reducing the separation between the AlGaInP direct Γ minimum and the X levels by varying the Al composition in the active region and by the application of hydrostatic pressure. Carrier transfer to the confining X level appeared as an additional peak in the electroluminescence (EL) and resulted in a significant decrease of the LED efficiency. A simple model of the EL emission that takes into account carrier population in the X minima was found to be in excellent agreement with the measured EL behavior. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125277
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPa (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2459-2461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure dependent measurements of the threshold current, differential quantum efficiency, and lasing wavelength of a ∼1.3 μm bulk InGaAsP semiconductor laser performed in a diamond anvil cell up to 1.5 GPa are reported. Results show a 40% decrease in the threshold current and a simultaneous enhancement in the differential quantum efficiency of approximately 350%. Large wavelength tunability of 140 nm is observed in this pressure range at room temperature. Calculations indicate that a reduction of the Auger recombination rate is likely to be the dominant loss mechanism responsible for the observed changes in the laser threshold current in this pressure range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109318
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  • 9
    Electronic Resource
    Electronic Resource
    Detuning of the gain and reflectivity spectra and its effect on the output characteristics of vertical cavity surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2171-2173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of mismatch between the reflectivity resonance and the gain spectra of vertical cavity surface emitting lasers. Detuning was caused by hydrostatic pressure and self-heating. Hydrostatic pressure shifts the gain peak towards shorter wavelengths with respect to the Fabry-Pérot (FP) resonance without modifying the gain spectrum. The threshold current remained unchanged for a positive mismatch of up to 18 nm. It increased four-fold for a negative mismatch of −13 nm at 0.5 GPa, where lasing disappeared. Increased threshold current and quenching of the emission are a consequence of the decrease of the gain at the FP resonance. A similar effect was observed when the gain peak was red-shifted with respect to the FP resonance by increasing the injected power. Increased mismatch is accompanied by a decrease of the gain at the emission wavelength which is responsible for the laser output quenching at high injected powers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113936
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 102-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indirect Γ-L scattering within the well, and real space carrier transfer to the barrier X1c states are shown to significantly affect the carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum wells. When carriers transfer to the indirect states occurs, the carrier dynamics is modified by the slow return of the carriers from the low mobility states to the well. As a result, the absorption recovery time increases by almost an order of magnitude. Carrier transfer to the indirect states also increases the carrier lifetime to values characteristic of indirect recombination. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119275
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