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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication and temperature dependence of the resistance of single-crystalline Bi nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3847-3851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline Bi nanowires with diameters ranging from 20 to 70 nm were prepared by electrodeposition using nanoporous aluminum oxide membranes rather than the more usual track-etched polycarbonate membranes. X-ray diffraction and selected area electron diffraction investigations revealed that the nanowires are essentially single crystalline and highly oriented. The temperature dependence of zero-field resistance of different diameter nanowires indicated that these Bi nanowires undergo a semimetal–semiconductor transition due to two-dimensional quantum confinement effects. The resistance maximum was observed at 50 K in zero magnetic field for 20 nm Bi nanowires, while the resistance minimum at 258 K for 50 nm Bi nanowires, due to the quantum size effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352562
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation and photoluminescence of highly ordered TiO2 nanowire arrays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly ordered TiO2 nanowire (TN) arrays were prepared in anodic alumina membranes (AAMs) by a sol-gel method. The TNs are single crystalline anatase phase with uniform diameters around 60 nm. At room temperature, photoluminescence (PL) measurements of the TN arrays show a visible broadband with three peaks, which are located at about 425, 465, and 525 nm that are attributed to self-trapped excitons, F, and F+ centers, respectively. A model is also presented to explain the PL intensity drop-down of the TN arrays embedded in AAMs: the blue PL band of AAMs arises from the F+ centers on the pore walls, and the TNs first form in the center area of the pores and then extend to the pore walls. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350959
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  • 3
    Electronic Resource
    Electronic Resource
    Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3202-3204 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monoclinic gallium oxide (β-Ga2O3) nanowires were synthesized by heat treating a composite material of GaAs and pre-evaporated Au at 1240 °C in dry oxygen atmosphere. The catalytic Au metal generated liquid nanoclusters that serve as reactive sites confining and directing the growth of β-Ga2O3 nanowires during the vapor-liquid-solid growth process. The β-Ga2O3 nanowires have diameters ranging from 20 to 50 nm and lengths of several micrometers. Photoluminescence measurement under excitation at 250 nm shows that the bulk β-Ga2O3 nanowires have a stable blue emission at 475 nm and an ultraviolet emission at 330 nm, which may be related to the defects such as the oxygen vacancy and the gallium–oxygen vacancy pair. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374498
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  • 4
    Electronic Resource
    Electronic Resource
    Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2011-2013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of the AAM. Photoluminescence (PL) measurements show a blue PL band in the wavelength range of 450–650 nm caused by the singly ionized oxygen vacancy in ZnO nanowires. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126238
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