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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measured minority and majority carrier mobility temperature dependencies in heavily doped n- and p-GaAs are compared. Majority carrier mobilities in heavily doped GaAs are essentially temperature (T) independent while minority carrier mobilities exhibit a roughly 1/T dependence. Majority carrier freezeout, which reduces both majority–minority carrier and ionized impurity scattering, is shown not to be responsible for the 1/T minority carrier mobility dependence. The difference in minority and majority carrier mobility T dependencies is explained in terms of the increased degree of degeneracy of majority carriers with decreased temperature, which decreases majority–minority carrier scattering. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114974
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Split-gate dual-electron waveguide device (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 642-644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A split-gate technology on an AlGaAs/GaAs heterostructure is used to implement a novel quantum-effect device which allows two electron waveguides to come into very close proximity to each other over a certain length. The field-effect action of a middle gate controls the height and width of the energy barrier between the waveguides. This allows a gradual transition from two isolated waveguides to two closely spaced waveguides and finally to the merging of both waveguides into a single broad waveguide. Two side gates can control the number of occupied subbands in each waveguide. This is confirmed by the observation of sharp 2e2/h conductance steps in each waveguide at 1.8 K as the side-gate voltage is modulated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106579
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  • 3
    Electronic Resource
    Electronic Resource
    Photoconductively switched antennas for measuring target resonances (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2178-2180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coplanar-strip horn antennas are switched photoconductively to generate picosecond bursts of freely propagating electromagnetic energy with bandwidth covering 15–75 GHz. The antennas are fabricated on GaAs grown by molecular beam epitaxy at low substrate temperatures. These antennas are used to perform transient scattering measurements from slit-coupled circular and coaxial cavities; Prony's method [IEEE Trans. Antennas Propagat. 23, 777 (1975)] is used to extract cavity resonances from the measured late-time scattered signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111668
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  • 4
    Electronic Resource
    Electronic Resource
    Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3007-3009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used cathodoluminescence (CL) and photoluminescence spectroscopy to observe deep-level states in GaAs grown at low-substrate temperatures by molecular beam epitaxy (LT GaAs) and the evolution of these states upon annealing. The as-grown material shows intense deep-level emissions which can be associated with an excess concentration of arsenic, mostly present as As-antisite and As-interstitial defects. These emissions subside with annealing for a few minutes at temperatures above 450 °C. CL measurements clearly show a dramatically reduced concentration of traps in the post-growth 600 °C annealed material. Additional measurements carried out on As/GaAs systems indicate a high surface-recombination velocity for these interfaces. These results account for a diminished role of electronic point defects in controlling the insulative behavior of LT GaAs and strongly supports a "buried'' Schottky barrier model, which involves ultrafast recombination of carriers at surfaces of embedded arsenic clusters formed during the annealing processing of LT GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106791
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  • 5
    Electronic Resource
    Electronic Resource
    Comparison of thermally oxidized metal–oxide–semiconductor interfaces on 4H and 6H polytypes of silicon carbide (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 803-805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 4H polytype of silicon carbide (SiC) has a wider band gap and higher electron mobility than either the 6H or 3C polytypes. We show here that similar oxidation rates and interfacial quality can be obtained on 4H-SiC and 6H-SiC by thermal oxidation. This makes the 4H polytype an attractive choice for developing SiC power metal–oxide–semiconductor field effect transistors. Postoxidation annealing in helium increases fixed charge and interface state densities in both 4H and 6H metal–oxide–semiconductor capacitors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116538
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