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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3986-3988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser deposition has been used to deposit Y1Ba2Cu3O7 layer on CeO2 buffer layers on (11(underbar)02) sapphire. Both layers are epitaxial with the 〈110〉 direction of the CeO2 layer aligned with the 〈2(underbar)021〉 direction of the sapphire substrate. The c-axis Y1Ba2Cu3O7 layer has its 〈100〉 direction alligned with the 〈110〉 direction of the CeO2. Cross-sectional transmission electron microscopy shows the epitaxy to be coherent and the interfaces to be abrupt at an atomic level. The best films have a critical current of 9 × 106 A/cm2 at 4.2 K and lower microwave surface resistance than copper at 77 K and at a frequency of 31 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349166
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  • 2
    Electronic Resource
    Electronic Resource
    Interpretation and modeling of buried InAs quantum dots on GaAs and InP substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1784-1787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparisons of buried InAs/GaAs and InAs/InP quantum dots (QDs) utilizing transmission electron microscopy display interesting parallels and differences between the two systems. The higher 7.2% misfit in the InAs/GaAs system produces small (∼20 nm diameter) QDs with a majority displaying a predominately round shape. The lower 3.2% misfit in the InAs/InP system produces larger QDs (∼35 nm diameter) with the majority also displaying a predominately round shape. In both systems, the size of the QDs can be varied by changes in growth procedures and the largest QDs in any population show evidence of faceting © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384861
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2272-2277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple layers of self-assembled InAs quantum dots (QDs) produced by the indium-flush technique have been studied by transmission electron microscopy (TEM) in an effort to develop techniques to reproducibly grow QDs of uniform size and shape. To monitor the changes in QD dimensions, plan-view samples of capped single layers were studied as well as cross-sectional samples of QDs in multiple layers and stacks. The changes in the observed round- and square-shaped QD images under various plan-view TEM imaging conditions, as well as the contrast reversal in the center of QD images viewed in cross-section are modeled using the many-beam Bloch-wave approach, including strain. The sizes and shapes of the QDs are determined through the interpretation of the observed (primarily strain) contrast in plan-view and the observed (primarily atomic number) contrast in cross-sectional TEM. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287226
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  • 4
    Electronic Resource
    Electronic Resource
    Quantum-well intermixing for optoelectronic integration using high energy ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3697-3705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359948
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  • 5
    Electronic Resource
    Electronic Resource
    Physical and electrical investigation of ohmic contacts to AlGaAs/GaAs heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7966-7972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism by which Ni-Au-Ge metallizations establish electrical contact to the two-dimensional electron gas (2DEG) in modulation-doped AlGaAs/GaAs heterostructures is investigated. Transmission electron microscopy was used to examine samples after electrical characterization by magnetoresistance measurements at cryogenic temperatures. We present a picture in which a 2DEG of reduced electron density exists under the deposited metallization. The success of the contacting procedure is described in terms of the magnitude of this density and the size, areal density, and penetration depth of a series of metallic spikes which establish the electrical link to the 2DEG. We suggest that the electrical behavior is not dominated by the current injection process at the spike/2DEG interface but is instead dictated by scattering from the array of antidots formed by the spikes and by a dependence of the 2DEG density on the size of the metallic pad. The implications of this picture for future nanostructure devices, featuring patterned ohmic metallization smaller than a micron, are discussed and preliminary results are reported. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357908
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  • 6
    Electronic Resource
    Electronic Resource
    Electrodeposition and characterization of magnetic Ni-Fe thin films on InP(100) surfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5795-5799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrodeposited magnetic Ni-Fe films are used in storage devices and are applicable as magnetic sensors. In this work, we demonstrate the electrochemical conditions for deposition of permalloy Ni-Fe nanocrystalline films onto InP(100) surfaces. The prepared Ni-Fe films were analyzed by scanning electron microscopy to determine surface morphology and by Auger electron spectroscopy for compositional depth profiling. Permalloy films with bulk composition of 81% Ni and 18% Fe were obtained by electrodeposition at −1.2 V (versus standard calomel electrode) in a bath of 0.5 M NiSO4, 0.02 M FeSO4, 0.4 M H3BO3, pH=3. Transmission electron microscopy measurements show that these films consist of fcc Ni-Fe nanocrystallites embedded in an amorphous matrix. The films also show good magnetic hysteresis loops, with low coercivity. The magnetic properties of these films are improved by an extended anneal at 100 °C. Interdiffusion occurred between Ni-Fe and the InP substrate after the sample was heated to 300 °C, and consequently a loss of ferromagnetic behavior was observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359643
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  • 7
    Electronic Resource
    Electronic Resource
    Demonstration of cascade process in InAs/GaInSb/AlSb mid-infrared light emitting devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1495-1497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the cascade process in mid-infrared electroluminescent InAs/GaInSb/AlSb multi-quantum-well devices. We report the proportional relation between the emitted optical power and the number of periods. This observed scaling is associated with the sequential transport of electrons from one active region to the next situated downstream in potential energy through the injection region. Deviations from this exact scaling are correlated with the variation of the wafer-to-wafer structural quality. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121037
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of extended solubility CdxPb1−xTe alloys on BaF2 by rf magnetron sputtering (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2430-2432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial (111)CdxPb1−xTe//(111)BaF2 films in the rocksalt structure have been made by codeposition from CdTe and PbTe magnetron targets in an rf discharge onto chemipolished substrates at 320 °C. Films were prepared with x values from 0 to 0.47, well past the range of bulk thermodynamic solubility. Raman spectroscopy, Auger spectroscopy, and transmission electron microscopy showed phase segregation had not occurred. The lattice spacing in the growth direction was observed to be insensitive to x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102900
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  • 9
    Electronic Resource
    Electronic Resource
    Structural properties of ultrathin arsenic-doped layers in silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1332-1334 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown δ-doped layers in Si by low-energy As-ion implantation during molecular beam epitaxy. The layers were investigated using cross-sectional transmission electron microscopy, secondary-ion mass spectrometry, Rutherford backscattering, and electrical measurements. The δ-doped layers were between 3.5 and 5.5 nm thick, and showed perfect epitaxy with 50–80% of the incorporated As on substitutional sites. Layers doped at concentrations from 1×1013 cm−2 to 8×1013 cm−2 had bulk-like mobilities and spanned the metal to insulator transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100707
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  • 10
    Electronic Resource
    Electronic Resource
    Modification of the second-order optical susceptibility in AlxGa1−xAs by ion-beam induced amorphization (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 216-218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical second-harmonic (SH) response of GaAs and Al0.6Ga0.4As bombarded with 1.2-MeV energy As+ ions has been measured for doses ranging from 5×1012 to 2×1014 ions cm−2. The measured SH response vanishes at an ion dose of 2×1014 ions cm−2 as a result of ion induced amorphization. Thermal annealing at 600 °C greatly reduced the damage induced optical absorption, for λ=1.06 μm light, but had no effect on the SH susceptibility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112677
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