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Near-field photocurrent measurements on boron-implanted silicon (2002)

Marocchi, V. ; Cricenti, A. ; Perfetti, P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 3937-3939

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report near-field photocurrent (NPC) measurements performed on three boron-implanted silicon samples characterized by different implantation doses. The images were acquired at λ=1330 nm corresponding to a photon energy of 0.93 eV which is smaller than the silicon energy gap (Egap=1.12 eV), representing incident radiation to which silicon is virtually transparent. The NPC images reveal the presence of boron clusters which are a consequence of B implantation and rapid thermal annealing at 1100 °C for 30 s. Boron clusters behave as metal clusters embedded into the silicon matrix and introduce gap states which give rise to the observed photocurrent. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1446654

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