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  • 1
    Electronic Resource
    Electronic Resource
    Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 991-994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent, conductive indium tin oxide (ITO) films were fabricated by pulsed-laser deposition on substrates held at room temperature. We investigated the relationship between electrical/optical properties of the films and the material stoichiometry, measured by Rutherford backscattering. The lowest resistivity films (∼4×10−4 Ω cm) have excessive oxygen compared with the stoichiometric composition ITO. After annealing in argon at 400 °C for 1.5 h, the oxygen-to-(indium+tin) ratio approaches the stoichiometric composition of 1.5 and resistivities of annealed samples are ∼2.5×10−4 Ω cm. The room-temperature ITO resistivity dependence on chamber gas pressure is explained in terms of a gas-dynamic model and oxygen content of the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370864
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced x-ray optical contrast of Mo/Si multilayers by H implantation of Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2121-2126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To increase the x-ray optical contrast of Mo/Si multilayers, we study low energy hydrogen ion implantation of amorphous Si layers. Using elastic recoil detection and Rutherford backscattering spectrometry, we measure the result of hydrogen implantation on Si atomic density. We find a lowering of Si atomic density, and, thus, an enhancement of x-ray optical contrast, as a result of H implantation. We find that the Si atomic density saturates at a minimum of 64±5% of the crystalline value. We have also observed a minor smoothing effect of H+ ion bombardment. Combined with Kr+ ion bombardment, causing a very much larger smoothing of the Si surface, the atomic density is found to saturate at a minimum of 77±5% of the crystalline value. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363105
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  • 3
    Electronic Resource
    Electronic Resource
    Photovoltaic effects in porphyrin polymer films and heterojunctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3381-3389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electropolymerized porphyrin films on indium–tin–oxide substrates have been characterized using Rutherford backscattering spectrometry, absorption spectroscopy, electrical characterization methods and with step profiling. With these methods the density of the films (ρ=1.35 g/cm3) and the absorption coefficients α(λ) have been determined. For film thicknesses exceeding 40 nm, silver electrical contacts without shunts are achieved by evaporation. The dark conductivity of the films amounts to 10−13–10−12 Ω−1 cm−1. When applying a band model for the conduction in the films, the dark space charge limited current and the exponent in the relation between photoconductivity and illumination intensity (σ∼Iγ, γ=0.65±0.05) indicate an exponential trap distribution in the band gap of the films. From the action spectra, filter effects of the photoconductance and low mobilities are inferred. Spin coating of acceptor layers on top of the polymer films results in the formation of heterojunctions showing photovoltaic behavior, with an open-circuit voltage 0.4–0.6 V. The short-circuit current is controlled by electron transfer at the donor/acceptor interface only and is limited by filter effects in the bulk and by the low conductivity of the materials. The optoelectrical properties of the layers are different if analyzed using a mercury contact (higher dark conductivity, no photoconductivity) which is attributed to the intro- duction of dopants from ambient air in this case. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363203
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  • 4
    Electronic Resource
    Electronic Resource
    Accurate thickness/density measurements of organic light-emitting diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4013-4016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of Rutherford backscattering spectroscopy for thickness analysis of organic light-emitting diode structures (OLEDs) with subnanometer resolution and a spatial resolution 〈1 mm. A careful study of ion beam induced effects revealed some organic film degradation, but not so severe as to inhibit meaningful measurements. The method is independent of the substrate and is still applicable if the organic film is capped with a metal cathode. Common OLED materials have been the subject of this study: poly(2-methoxy,5-(2′-ethylhexoxy)-1,4-phenylene-vinylene (MEH-PPV), N′,N′-diphenyl-N, N′-bis(3-methylphenyl)-1,1′ biphenyl-4,4′-diamine (TPD), and tris-(8-hydroxyquinoline) aluminum (Alq3). The densities of thin films of evaporated TPD (ρ=1.22±0.05 g/cm3) and Alq3 (ρ=1.51±0.03 g/cm3) have been established. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368582
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  • 5
    Electronic Resource
    Electronic Resource
    Surface interaction of Cu (NO3)2(H2O)2.5 with oxidised Si(100) (1994)
    Springer
    Catalysis letters 28 (1994), S. 109-117 
    Details
    ISSN: 1572-879X
    Keywords: AFM ; catalyst ; copper ; impregnation ; kmodel ; spin-coating
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Model catalysts were prepared by spin-coating untreated and hydrated silicon wafers using Cu(NO3)2(H2O)2.5 solved in cyclohexanone as precursor. The prepared surfaces were examined by atomic force microscopy and Rutherford backscattering spectrometry. Spin-coating untreated silicon wafers resulted in clusters composed of small particles. The use of hydrated silicon wafers as substrate resulted in highly disperse small particles. We attribute the difference in surface morphology to the presence of more silanol groups on the surface of the hydrated wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00812475
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  • 6
    Electronic Resource
    Electronic Resource
    A complete characterization of Ca5(PO4)3OH sputter-deposited films by ion beam analysis: RBS and ERD (1998)
    Hoboken, NJ : Wiley-Blackwell
    Journal of Biomedical Materials Research 42 (1998), S. 266-271 
    Details
    ISSN: 0021-9304
    Keywords: calcium phosphate ; ion beam analysis ; coating ; Rutherford backscattering ; elastic recoil detection ; biomaterial ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Medicine , Technology
    Notes: RF magnetron sputter deposition was used to deposit thin calcium phosphate (hydroxyapatite) layers on titanium alloy substrate material. We determined the precise amount of calcium, phosphorus, oxygen, and hydrogen in these films by combining two ion-beam analysis techniques: Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD). Variables were power level, partial oxygen pressure, or additional water vapor. Also examined was the influence of additional bias power to the substrates during deposition and the effect of annealing on the final composition of the deposited layers. Measurements showed that the Ca/P ratio decreased with increasing oxygen pressure or decreasing sputtering power. In addition, the Ca/P ratio increased when a bias was applied to the substrates. The O/P ratio of the films decreased with additional oxygen pressure but increased when additional water vapor was applied during deposition. All as-deposited films showed a higher hydrogen content than stoichiometric HA. The hydrogen content in the films deposited with water vapor was more than 7 times higher than in the films deposited under pure argon conditions. After annealing, the hydrogen content decreased to about 3.5 at % whereas in stoichiometric HA the hydrogen content amounts to 4.5 at %. After annealing, the oxygen concentration in the film also decreased. We assume that hydrogen disappears out of the film as H2O during annealing. For the targets used in these experiments, sputter deposition at 400 W, with additional water vapor and annealing at 500°C, produced films with a stoichiometry closest to that of hydroxyapatite. © 1998 John Wiley & Sons, Inc. J Biomed Mater Res, 42, 266-271, 1998.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of discharge power level on the properties of hydroxyapatite films deposited on Ti6A14V with RF magnetron sputtering (1995)
    Hoboken, NJ : Wiley-Blackwell
    Journal of Biomedical Materials Research 29 (1995), S. 269-276 
    Details
    ISSN: 0021-9304
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Medicine , Technology
    Notes: The effects of discharge radiofrequency (RF) power and film thickness were studied on the characteristics of Ca5(PO4)3OH (hydroxyapatite) thin films fabricated by RF magnetron sputtering. The structure and chemical composition were investigated with α-step (thickness), scanning electron microscopy (SEM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and infrared absorption spectrometry (FTIR). The films were analyzed assputtered and after annealing at 550°C under argon flow. SEM showed that the film surfaces had no cracks or other defects. X-ray diffraction showed that the deposited films were amorphous with low-discharge RF power, and crystalline with high-discharge RF power. After annealing, all the films had the same crystalline structure as apatite. However, the RBS measurements revealed that all films had a higher calcium-phosphate ratio than standard synthetic hydroxyapatite. Furthermore, statistical testing of the RBS data revealed the existence of only a weak correlation between the Ca/P ratio and the discharge power level. Although all sputtered films showed phosphate bonds in the infrared spectrum, only after annealing did the OH bonds of hydroxyapatite become visible. © 1995 John Wiley & Sons, Inc.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jbm.820290218
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