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  • 1
    Electronic Resource
    Electronic Resource
    The effect of Ar+ ion implantation on the electrical characteristics of Cr/P-Si Schottky diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2757-2759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of 150-keV Ar+ ion implantation of Cr/p-Si(100) Schottky contacts was studied by measuring the current voltage characteristics over the temperature range 293–373 K before and after different doses of ion bombardment. The characteristics obtained were used in a least-squares fitting procedure to determine the ideality constant n, the saturation current IS, the series resistance R, and the Schottky barrier height Φb. Ar+ ion bombardment resulted in higher values for n and R but a lower value for IS. The value of Φb increased by 10%. The apparent reason for the increase in Φb for p-type contacts as well as the decrease for n-type contacts is discussed in reference to the identical behavior earlier reported for low-energy inert gas ion beam etching and reactive ion etching of Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351049
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of optically active defects created by noble gas ion bombardment of silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4075-4080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modification in the G-line (969.5 meV) and the C-line (789.4 meV) photoluminescence (PL) intensities were studied as a function of the fluence, energy, and mass of the bombarding ions (He, Ne, Ar, and Kr). The intensities of the luminescent lines induced by 1 keV Ne bombardment were found to decrease with increasing dose after reaching a maximum at about 1×1012 ions/cm2. Considerable reductions in the intensities of the G- and C-lines were also recorded during bombardment using heavier noble gas ions and they have been attributed to the higher rates of nuclear energy deposition with increasing bombarding ion mass. The incident ion energy at which the PL intensities of the spectral lines reached their maximum values was found to be dependent on the ion mass and fluence. We have explained the decrease in PL intensities of the G-line and C-line to be due to the introduction of increased amounts of nonradiative recombination centers with increasing incident ion dose and mass. Further, the integral sum of defects induced during bombardment as a function of projected ion range and excitation depth of the Ar-ion laser has been used to qualitatively describe the decrease in the intensities of the two lines. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367227
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4775-4777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminium Schottky contacts on n-Si were subjected to Ar+ ion bombardment, followed by a thermal anneal at 350 °C. This resulted in a marked improvement in the diode character of the implanted contacts. α-particle channeling analysis showed that very little damage remained after annealing, while AES showed only slight mixing of the Al and Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341197
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of Ar+ ion bombardment on the electrical characteristics of Al/n-Si contacts (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2566-2570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion bombardment of aluminum contacts on n-type silicon has been investigated by measuring the I-V characteristics before and after implantation of Ar+. These characteristics have been quantified in terms of the saturation current, the ideality factor, and the diode series resistance. Before implantation, large variations in these parameters were found. After implantation, much more uniform characteristics were obtained but they were still far from ideality. Auger electron spectroscopy showed that very little mixing took place, but that the concentration of oxygen at the interface decreased. From α-particle channeling analysis it was ascertained that the implantation caused severe damage to the silicon. This damage was probably responsible for the observed increase in the series resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338927
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  • 5
    Electronic Resource
    Electronic Resource
    Low energy nitrogen implantation profiles in cobalt using AES (1980)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 187-190 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Using AES in combination with argon depth profiling, low energy (0.5-5 keV) nitrogen implantation profiles were determined. The profiles show reasonable agreement to the Schulz-Wittmaack model of ion collection during sputtering when the effect of the finite escape depth of the Auger electrons is taken into account. The projected ranges of nitrogen in cobalt obtained when using this model shows reasonable correspondence with the LSS-calculated ones.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740020507
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic force microscopy investigation of argon-bombarded InP: Effect of ion dose density (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 433-439 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Samples of InP(100) n-doped with S atoms to 4 × 1018 cm-3 and to 6 × 1018 cm-3 were bombarded with 0.5 and 5 keV argon ions. The angle of incidence of the 5 keV ions was 71° with respect to the sample normal and 41° for the 0.5 keV ions. The resulting topography development was investigated by means of atomic force microscopy (AFM) and transmission electron microscopy (TEM) of Cr-C replicas of the bombarded surfaces. There was a correlation between the AFM images and those from the TEM replicas. At the same magnification the AFM images showed more detail. The surface roughness in the AFM images and those from the TEM replicas. At the same magnification the AFM images showed more detail. The surface roughness in the AFM images was quantified using the software of the AFM instrument. In the range 5 × 1014-2 × 1018 Ar+ cm-2, there was a linear relationship between the roughness parameter and the logarithm of the ion dose density. This fact excludes a seeding sputter erosional theory for the explanation of the development of bombardment-induced topography on InP. At the higher does densities, ripple formation was observed. The dose density dependence of average wavelength of the ripples did not correlate with the predictions of the Bradley-Harper theory.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740230702
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic Force Microscopy Investigation of Ion-bombarded InP: Effect of Angle of Ion Bombardment (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 503-510 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Samples of InP(100) n-doped with S atoms to 4×1018 cm-3, were bombarded with 0.5 keV argon ions and with krypton ions of energy 0.5 and 5 keV at various angles to the sample normal. The ion dose density for 0.5 keV Ar+ and 0.5 keV Kr+ bombardment was 5×1016 ions cm-2, whereas for 5 keV Kr+ it was 2×1016 ions cm-2. The ion current density was set to a low value of 5×1013 ions cm-2 s-1 to minimize the sample heating. The resulting topography development was investigated with an atomic force microscope. The surface roughness was quantified and analysed as a function of the angle of ion bombardment. Two- and three-dimensional images showing various types of topography and sputter cone size (height and width) are also presented. Close resemblance between the dependency of roughness and sputter rate on angle of ion incidence suggests a correlation between the two.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Models for the sputter correction factor in quantitative AES for compound semiconductors Dedicated to Professor Siegfried Hofmann on the occasion of his 60th birthday. (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 841-850 
    Details
    ISSN: 0142-2421
    Keywords: sputtering ; compound semiconductors ; quantitative AES ; sputter correction factor ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Quantification in Auger electron spectroscopy using the relative elemental sensitivity method with matrix correction factors is a popular method. Matrix factors for bombardment-induced compositional changes and topography development are, however, seldomly used. The main emphasis of this study is to find a sputter correction factor for bombardment-induced surface compositional changes in compound semiconductors after low-energy argon ion bombardment. For this purpose several analytical preferential sputter models are employed. In these models several approximations for the surface binding energy are also used. The calculated factors are compared with experimental averages of 13 binary compound semiconductors bombarded with argon ions. Based on the Sigmund preferential sputter model, a generalized formula for the sputter correction factor for room-temperature AES and XPS analyses with readily available parameters is given byKABY=(MB MA)0.29(2XBΔ HBa+XAΔ HAa+XAΔ HBa2XAΔ HAa+XBΔ HAa+XBΔ HBa)0.71where Mi is the atomic mass of atomic species i, ΔHia is the heat of atomization (which is equal to the heat of sublimation) and Xi is the measured surface composition after sputtering. In the context of the presented models, this study also shows that mass effects are more important than chemical binding effects in the bombardment-induced compositional changes in compound semiconductors. The analysis also shows that elemental sputter yield ratio approximation for the sputter correction factor is not valid. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Preferential sputtering of GaAs (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 491-495 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Low-energy (0.65-3 keV) Ar+ ions were used to sputter (100) and (110) GaAs. Preferential sputtering effects were investigated by means of Auger electron spectroscopy. The results show that the equilibrium sputtered surface composition on both surfaces is depleted in As. No sample orientation effects were observed. However, the equilibrium compositions of the sputtered surfaces become increasingly Ga-enriched by increasing the energy of the bombarding ions. The sputtered surface composition is independent of the angle of incidence of the bombarding Ar+ ions. For the different experimental conditions, the mean final surface compositions varied from GaAs0.89 to GaAs0.69. These values are in broad agreement with other reported AES studies. This agreement is probably due to the fact that the sputtered surface composition is independent of the angle of incidence of the ions on the GaAs sample.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740180706
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic force microscopy investigation of ion-bombarded InP: Effect of angle of ion bombardment (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 503-510 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Samples of InP(100) n-doped with S atoms to 4 × 10 18 cm-3, were bombarded with 0.5 keV argon ions and with krypton ions of energy 0.5 and 5 keV at various angles to the sample normal. The ion dose density for 0.5 keV Ar+ and 0.5 keV kr+ bombardment was 5 × 1016 cm -2,whereas for 5 keV kr+ it was 2 × 1016 ions cm-2. The ion current density was set to a low value of 5 × 1013 cm-2 s-1 to minimize the sample heating. The resulting topographgy development was investigated with an atomic force microscopoe. The surface roughness was quantified and analysed as a function of angle of ion bombardment. Two- and three-dimensional images showing various types of topography and sputter cone size (height and width) are also presented. Close resemblance between the dependency of roughness and sputter rate on angle of ion incidence suggests a correlation between the two.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740240805
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