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  • 1
    Electronic Resource
    Electronic Resource
    Concentration-dependent optical-absorption coefficient in n-type GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4694-4702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping-dependent, near-band-edge optical-absorption coefficient α(hν) was deduced from optical transmission measurements in n-type GaAs thin films. The selenium-doped films were grown by metalorganic chemical-vapor deposition and doped to produce room-temperature electron concentrations from 1.3×1017 to 3.8×1018 cm−3. The transmission measurements covered photon energies between 1.35 and 1.7 eV and were performed on double heterostructures with the substrate removed by selective etching. The results show good qualitative agreement with previous studies and good quantitative agreement, except for the heavily doped samples. For n0=3.8×1018 cm−3, α(1.42 eV) is approximately four times that reported by previous workers. Secondary-ion-mass spectrometry measurements on films grown under differing conditions demonstrate that α(hν) is sensitive to electrically inactive dopants and supports the hypothesis that precipitates or compensation influenced previous measurements. These comprehensive results on high-quality, uncompensated material should prove useful for fundamental studies of optical transitions in n-type GaAs as well as for modeling optoelectronic devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354336
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1436-1442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence decay measurements are used to explore minority carrier recombination in n-type GaAs grown by metalorganic chemical vapor deposition, and doped with selenium to produce electron concentrations from 1.3×1017 cm−3 to 3.8×1018 cm−3. For electron densities n0〈1018 cm−3, the lifetime is found to be controlled by radiative recombination and photon recycling with no evidence of Shockley–Read–Hall recombination. For higher electron densities, samples show evidence of Shockley–Read–Hall recombination as reflected in the intensity dependence of the photoluminescence decay. Still, we find that radiative recombination and photon recycling are important for all electron concentrations studied, and no evidence for Auger recombination was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351704
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop-etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs-based III-V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98947
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  • 4
    Electronic Resource
    Electronic Resource
    Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2440-2442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed lifetimes greater than 1 μs in moderately doped, thin film, n-GaAs/Al0.3Ga0.7As double heterostructure membranes formed by etching away the substrate. We attribute these ultralong lifetimes to enhanced photon recycling caused by the removal of the substrate. Nonradiative recombination in the bulk and at the interfaces is very low; the upper limit of the interface recombination velocity is 25 cm/s. Such long lifetimes in GaAs doped at ND=1.3×1017 cm−3 suggest that thin-film solar cells offer a potential option for achieving very high efficiencies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108190
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