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  • 1
    Electronic Resource
    Electronic Resource
    Effects of doping on the transport properties of CoSb3 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3780-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of doping on the transport properties of CoSb3 have been systematically investigated using Ni, Pd, and Pt as donor impurities. It is shown that the Hall mobility, the Seebeck coefficient, and the electrical conductivity depend strongly not only on the carrier concentration but also on these donor impurities. Our theoretical analysis suggests that the electron effective mass and the conduction band deformation potential are significantly affected by both the doping levels and the donor impurities. These doping effects in CoSb3 can be attributed to (1) the changes in the electronic structure with doping and (2) the specific nature of the conduction band structure, in particular, the nonparabolicity of the band which can be explained in terms of a two-band Kane model. The observed changes in the electronic properties with doping are also consistent with the predictions of a recent band structure calculation of CoSb3. On the other hand, the lattice thermal conductivity decreases markedly with increasing carrier concentration, and is almost independent of the donor impurities. Our analysis based on the Debye model indicates that the coupling of the point-defect (alloy) scattering with the electron-phonon scattering plays an important role in reducing the lattice thermal conductivity in heavily doped n-type CoSb3. The effects of doping on the phonon scattering are also discussed on the basis of a model calculation as a function of the electronic properties and the impurity properties (atomic mass and size). As a result, it is found that the strength of the electron-lattice interaction (the electron-phonon coupling), which is closely related to the effective mass and the deformation potential, is an important factor affecting the scattering of phonons as well as charge carriers in heavily doped n-type CoSb3. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371287
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  • 2
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance of defects in β-iron disilicide ceramics (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1693-1698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The point defects in β-iron disilicide ceramics, which may influence the thermoelectric properties of the ceramics, have been investigated by electron paramagnetic resonance (EPR). The 77-K EPR spectra are dependent upon the Si/Fe ratio of the ceramics specimens. Several S=1/2 centers with g factors of about 2.0 are observed in both silicon-deficient p-type and iron-deficient n-type specimens prepared by sintering and subsequent annealing of FeSix(1.9〈x〈2.8) grains. These centers disappear in a specimen prepared by directly annealing a lump of FeSi2 alloy without sintering. By considering the difference of the sample-preparation procedures, we conclude that the S=1/2 centers exist in the oxidized intergrain region of the ceramics. An S=1/2 signal with an anisotropic g factor (g1=2.061, g2=2.047, g3=2.024) arises only in iron-deficient n-type specimens. This signal is attributable to unionized donor electrons. A multiplet signal with zero-field splitting arises in nearly stoichiometric p-type specimens. The multiplet signal is explained in terms of an S=3 center. Several possible models based on exchange interaction between two spins were examined to elucidate the origin of the S=3 center. The most plausible model is the pair of a high spin Fe3+ (S=5/2) and an S=1/2 center (a silicon vacancy or an acceptor hole).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356356
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  • 3
    Electronic Resource
    Electronic Resource
    Point defects and thermoelectric properties of iron disilicide ceramics sintered with SiH4-plasma-processed micrograins (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2097-2103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The point defects in β-iron disilicide (β-FeSi2) have been investigated by electron paramagnetic resonance (EPR) along with the thermoelectric properties. The samples used are FeSix (1.9≤x≤2.8) ceramics sintered with FeSix micrograins processed in SiH4-plasma and nonprocessed. EPR detects (1) several S=1/2 signals and (2) a multiplet signal. An S=1/2 signal with orthorhombic g factors (g1=2.061, g2=2.047, g3=2.024) is detected in all n-type specimens, and ascribed to unpaired electrons of donors associated with iron vacancies. The other S=1/2 signals are detected in both n-type and p-type specimens. The centers responsible for these signals are considered to exist in an oxidized intergrain region of the ceramics. The EPR intensity of the multiplet signal due to the closed-pair of a high spin Fe3+ ion (S=5/2) and an S=1/2 center is reduced by SiH4-plasma treatments. SiH4-plasma processing of FeSix micrograins prior to sintering changes the Seebeck coefficient sign and magnitude, depending upon the condition of plasma processing. This Seebeck change is explained in terms of the introduction of silicon- and/or iron-vacancies. SiH4-plasma processing increases the electrical conductivity of nearly stoichiometric specimens and reduces the EPR intensity of the multiplet signal. A possible model for the increased conductivity is discussed using an energy band model for the ceramic grains and grain boundaries. We consider that the change of the thermoelectric properties by SiH4-plasma processing is mainly due to the modification of defects in and near the ceramic intergrain region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357620
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and electronic transport properties of polycrystalline p-type CoSb3 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5270-5276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electronic transport properties of polycrystalline p-type CoSb3 with different grain sizes (about 3 and 3×102 μm) were investigated. The magnetic susceptibility was also measured. Samples were characterized by x-ray diffractometry, electron-probe microanalysis, and optical microscope observation. Samples were found to be stoichiometric and homogeneous. The Hall carrier concentration of the samples is of the order of 1018 cm−3 and weakly dependent on the temperature. The temperature dependence of the Hall mobility suggests that the predominant scattering mechanism drastically changes depending on grain size: for large grain size a combination of the neutral impurity scattering and the acoustic phonon scattering, and for small grain size the ionized impurity scattering. The magnetic susceptibility was found to be essentially diamagnetic independently of grain size, and to vary slightly with temperature. The weak temperature dependence of the susceptibility can be explained by taking into account the three contributions of ion cores, conduction electrons, and trace amounts of magnetic impurities. From the analysis of the susceptibility due to conduction electrons, the band gap energy was determined to be about 70–80 meV, consistent with a recent band structure calculation. Although the effects of nonmagnetic impurity phases segregated (Sb, etc.) on the scattering mechanism are not clear, the grain size is one of the key factors determining the transport properties of polycrystalline CoSb3. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367350
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  • 5
    Electronic Resource
    Electronic Resource
    Study on the building factor of a stacked core made of amorphous sheets (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5707-5707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There are some factors increasing the building factor of a transformer assembled from amorphous sheets. One of the factors may be the localized irregularity of magnetization property. Such an inhomogeneity is caused by the localized mechanical stress or the inhomogeneous temperature distribution during annealing. Various stacked cores which are composed of amorphous sheets with inhomogeneous magnetic characteristics as shown in Fig. 1 have been investigated. Each half of the sheet is annealed uniformly at different temperature from the other half. The frequency characteristics of power losses are measured to clarify whether the main cause of the total loss increase is due to the hysteresis loss or the eddy current loss. The obtained results show that the incremental loss is mainly due to the increase of eddy current loss. The increase of eddy current loss may be due to the transverse flux across the interlaminar gap. Therefore, the relationship between power losses and gap length has been examined. The obtained results denote that the eddy current loss is increased by the transverse flux. The experimental results are also checked by numerical analysis of the flux distribution in stacked cores using the finite element method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342233
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  • 6
    Electronic Resource
    Electronic Resource
    Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 608-610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface construction of tilt growth that is sometimes observed for epilayer growth on a lattice mismatched substrate is modeled on the basis that tilt relieves misfit strain in the epilayer. In this model off-axis misfit accommodation is assumed to be due to only tilt dislocations or tilt dislocations combined with misfit dislocations. The average interval between successive dislocations which are formed along the interface can be estimated using the lattice units of both materials and that of the epilayer in another principal axis direction; the tilt angle can also be calculated geometrically. The tilt angle predicted by this model agrees well with experimental results for several examples of mismatched epilayer growth by molecular-beam epitaxy. The model suggests a method to grow a single domain of stress-free epilayer by using a substrate cut to an angle that allows off-axis fit to the lattice unit of the epilayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385801
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  • 7
    Electronic Resource
    Electronic Resource
    Uniaxial locked epitaxy of ZnO on the a face of sapphire (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1801-1803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]||[112¯0] and 〈112¯0〉||[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to 〉0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311603
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  • 8
    Electronic Resource
    Electronic Resource
    Hypoalbuminemia, oliguria and peripheral cyanosis in an infant with severe atopic dermatitis (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Pediatric allergy and immunology 7 (1996), S. 0 
    Details
    ISSN: 1399-3038
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A six-month old male infant with severe atopic dermatitis was admitted with hypoalbuminemia, oliguria and cyanosis of the extremitie. s. There was marked edema and generalized eczema with foul, yellowish exudates. The patient's major clinical manifestations were attributed to the loss of albumin through the skin. Although atopic dermatitis is a common disease in children, here we want to show that systemic disturbances may arise from such condition, describe the total care given the patient, and emphasize the wholistic approach in managing cases of severe atopic dermatitis, intensive treatment was instituted and the patient was discharged after three weeks and remained in a stable condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1399-3038.1996.tb00114.x
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  • 9
    Electronic Resource
    Electronic Resource
    Molecular Composition of Onion Pectic Acid (2000)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 65 (2000), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Pectin was extracted, then pectic acid was purified without autolysis. It contained 93.7% uronic acid and 6.3% neutral sugar. Using exopolygalacturonase, exopolygalacturonate lyase and endopolygalacturonase, the molecular composition of onion pectic acid was determined; the proportion of galacturonic acid residue from the nonreducing end to rhamnogalacturonan (RG) was 9.7%, while that of the reducing end to RG was 46.7%. From RG to RG, the proportion of galacturonic acid residue was 41.0%, and the RG region was 2.6%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2000.tb10258.x
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  • 10
    Electronic Resource
    Electronic Resource
    The correlation between transcription and membrane-association of λ DNA
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 46 (1972), S. 349-356 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0006-291X(72)80145-1
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