Keywords:
Gallium arsenide semiconductors.
;
Electronic books.
Type of Medium:
Online Resource
Pages:
1 online resource (425 pages)
Edition:
1st ed.
ISBN:
9780080864365
Series Statement:
Issn Series
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=405264
Language:
English
Note:
Front Cover -- Minority Carriers in III-V Semiconductors: Physics and Applications, Volume 39 -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter l. Radiative Transitions in GaAs and Other lll-V Compounds -- I. Introduction -- Il. Band Structure in Semiconductors -- lll. Absorption and Emission Rates -- IV. Optical Gain -- V. InGaAsP Materials -- VI. Radiative Lifetime -- VII. Quantum-Well Structures -- VIII. Application to Lasers -- References -- Chapter 2. Minority-Carrier Lifetime in III-V Semiconductors -- I. Introduction -- Il. Recombination Mechanisms -- lll. Lifetime Measurement Techniques -- IV. Time-Resolved Photoluminescence in Device Structures -- V. High-Injection Effects in Double Heterostructures -- VI. GaAs Minority-Carrier Lifetime -- VII. AIxGa1-xAs Lifetimes -- VIII. Summary -- Acknowledgments -- References -- Chapter 3. High Field Minority Electron Transport in p-GaAs -- I. Introduction -- Il. Drift Velocity -- lll. Energy Transfer Process -- IV. Ultrafast Energy Relaxation Process -- V. Monte Carlo Simulation Results -- VI. Summary -- Acknowledgment -- References -- Chapter 4. Minority-Carrier Transport in lll-V Semiconductors -- I. Introduction -- Il. Minority-Carrier Transport in Compositionally Nonuniform Semiconductors -- lll. Heavy Doping Effects and Minority-CarrierTransport -- IV. Coupled Photon/Minority-Carrier Transport -- V. Effects of Heavy Doping on Device-Related Materials Parameters -- VI. Minority-Carrier Transport in lll-V Devices -- VII. Summary -- Acknowledgment -- References -- Chapter 5. Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide -- I. Introduction -- Il. Many-Body Effects in Bulk GaAs -- lll. Many-Body Effects in GaAs Quantum Wells -- IV. Effects of the Impurity Centres -- V. Optical Experiments -- VI. Electrical Experiments.
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Acknowledgments -- References -- Chapter 6. An Introduction to Nonequilibrium Many-Body Analyses of Optical and Electronic Processes in III-V Semiconductors -- I. Introduction -- Il. k . p Band Structure -- lll. Second Quantization -- IV. Ensemble Properties -- V. Electron Self-Energy -- VI. Dielectric Function Models -- VII. Intraband Processes and Transport -- VIII. Interband Processes -- IX. Conclusions -- APPENDIX A -- APPENDIX B -- APPENDIX C -- References -- Index -- Contents of Volumes in This Series.
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