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  • 1
    Electronic Resource
    Electronic Resource
    Si self-interstitial injection from Sb complex formation in Si (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3254-3259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temperatures, the diffusion enhancement or retardation of deep B or Sb marker layers next to a 1.1×1020 cm−3 Sb box, as well as the formation of Sb precipitates within the box. It is concluded that the interstitials are not associated with precipitate growth, but that they are generated from formation of Sb-vacancy complexes, primarily involving 2 Sb atoms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289234
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  • 2
    Electronic Resource
    Electronic Resource
    Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 394-396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology and bulk structure of both strained (0.01≤x≤0.053) and strain-free Si1−xSnx (x=0.055) layers grown by molecular beam epitaxy on (001) Si and Si1−yGey substrates have been investigated by atomic force and transmission electron microscopy. The surfaces of all Si1−xSnx layers were found to have a mazelike structure composed of rectangular features faceted primarily by {113} planes. Transmission electron microscopy images of the alloys revealed columnar structures originating at the interface between the alloys and the substrates. The formation of the observed surface morphologies and the columnar structure is attributed to the surface-growth processes modified by the Sn atoms as compared to the growth of pure Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118072
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  • 3
    Electronic Resource
    Electronic Resource
    Pseudomorphic Si1−xSnx alloy films grown by molecular beam epitaxy on Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2287-2289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained Si1−xSnx (0.001≤x≤0.052) alloys were synthesized on (001) Si substrates by molecular beam epitaxy at 220 and 280 °C. The as-grown alloys were found to be pseudomorphic to Si with no indication of extended defects and tin precipitates. Within the accuracy of our studies the compressive strain in the alloys corresponds to that deduced from Vegard's linear interpolation between the lattice parameters of Si and α-Sn. The annealing experiments show that the alloys are thermally unstable at a higher temperature (1000 °C) and that the transition of the Si1−xSnx/Si system to a lower energy state occurs through two channels: (i) alloy decomposition through precipitation of tin atoms into metallic β-Sn, and (ii) introduction of 60° misfit dislocations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115128
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  • 4
    Electronic Resource
    Electronic Resource
    Self-organization of GeAs nanodots in relaxed Si0.5Ge0.5 alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3494-3496 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the bimodal distribution and long-range ordering of GeAs nanodots obtained in strain-relaxed epitaxial Si0.5Ge0.5 alloy layers after arsenic implantation and rapid thermal annealing. GeAs dots of two different average sizes around 15 and 55 nm are found after high temperature rapid thermal annealing. The larger dots are of elliptical shape and located at the surface region; they are distributed preferably along 〈110〉 directions which correlates well with the observed cross-hatch pattern. The origin of the bimodal precipitate distribution as well as of the long-range ordering effect of the GeAs nanodots is discussed in terms of strain-induced nucleation and diffusion-limited growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418262
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  • 5
    Electronic Resource
    Electronic Resource
    Surfactant-mediated growth of Si1-xSnx layers by molecular-beam epitaxy (1999)
    Springer
    Applied physics 68 (1999), S. 259-262 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35.BS; 81.15.Hi; 68.60.Dv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 1-x Snx (0.01≤x≤0.04) layers on Si(001) and relaxed Si-Ge substrates. The Si1-xSnx layers were investigated using Rutherford backscattering spectrometry, atomic force microscopy, transmission electron microscopy and preferential-etching experiments. The investigation of surfactant-mediated growth of epitaxial Si1-xSnx was motivated by a possible use of relatively higher growth temperatures without relaxation by surface precipitation. It is demonstrated that higher growth temperatures are attainable when Bi is used as surfactant if the surface-segregated Sn layer is relatively small, equivalent to Si1-xSnx layers of low strain. The increase in growth temperature leads to a significant improvement in the crystalline quality of these Si1-xSnx layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050885
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