Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 4319-4323
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Tight-binding calculations of electronic structures for (001)-(InAs)n(InSb)m strained layer superlattices are presented. The dependences of the superlattice band gap on the band offsets between InAs and InSb are examined for three different types of biaxial strains. It is found that the band gap depends strongly on the band offset, and that for m=1 the ordering lowers the band gap with respect to the random alloy. A comparison with the photoluminescence data for the energy gaps of (n×1) strained-layer superlattices is discussed. In addition, the electronic structures of strained InAs quantum wells are calculated, and interpretations are provided for the observed type-I to type-II band alignment transition at n=5 in a quantum well formed by (n×1) strained layer superlattices and AlSb barriers. Changes of energy gaps with layer thicknesses in strained layer superlattices with n=m and n=8−m are also studied. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.373072
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