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  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear optical diagnosis of oxide traps formed during reactive ion etching (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2641-2647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide traps generated by reactive ion etching are studied using a pulsed femtosecond laser. The second harmonic generation (SHG) signal from the Si/SiO2 interface is sensitive to charged traps in the oxide. The time evolution of the SHG signal indicates that positive traps predominate. The angular dependence of the polarized signal shows that the electric field generated by the oxide traps alters the symmetry of the sample. The damage is greatest for an oxide thickness of 13 nm (for a plasma dc bias of 300 V). Thicker oxides have smaller SHG signals, presumably because the Fowler–Nordheim tunneling currents induced by plasma charging of the oxide surface are smaller. Very thin oxides also exhibit reduced damage. The time dependent SHG signals depend on the temperature of the samples; these data provide information on the trapping and detrapping of substrate electrons by oxide holes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288168
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  • 2
    Electronic Resource
    Electronic Resource
    Longitudinal-mode switching in a two-segment multiquantum-well distributed-feedback laser (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4810-4812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of wavelength switching are observed experimentally in two-segment 1.55 μm InGaAsP/InP ridge waveguide multiquantum-well distributed-feedback (DFB) lasers. The first type occurs between the longitudinal modes on the opposite sides of the DFB stop band, while the second type occurs on the same side of the stop band. The physical mechanism is correlated to a slight difference of the effective grating period between the two inhomogeneously injected laser segments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359402
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  • 3
    Electronic Resource
    Electronic Resource
    Optical injection effects and all-optical set-reset operations in two-segment strained multiquantum-well distributed feedback bistable lasers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3823-3826 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical injection effects and all-optical set-reset operations in two-segment strained multiquantum-well (MQW) distributed feedback (DFB) bistable lasers were experimentally investigated. The optical bistable characteristics under detuned optical injection, of strained MQW DFB bistable lasers, show the effect of the residual Fabry–Perot side modes of the DFB structures; optimizing the input wavelength and the input power is suggested for applications. The switching properties of dynamic optical set-reset operations with pulsed optical injection were reported, which appear to be related to the optical bistable characteristics under cw optical injection; however, the switching transients are found to be essential to full understanding of these switching properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361808
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication of ultrafine gratings on GaAs by electron beam lithography and two-step wet chemical etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1212-1214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 50 nm period gratings were produced on thick GaAs substrates by using electron beam lithography and two-step wet chemical etching. The size was very close to the theoretical limit of the electron beam lithography. For transferring such a fine grating onto GaAs, a two-step wet chemical etching method was developed, where a H2SO4-H2O2-H2O system is first used to roughly etch the oxygen and carbon-contaminated GaAs surface, followed by surface planarization with a Br-CH3OH system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103488
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  • 5
    Electronic Resource
    Electronic Resource
    Degradation of bipolar transistors under high current stress at 300 K (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4734-4740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed the onset of degradation of bipolar transistor characteristics under high current forward stress at room temperature. The observed degradation may be attributed to interface states generated next to the sidewall oxide at the emitter base junction in a self-aligned bipolar transistor. Individual steps in the generation and annealing kinetics may be resolved. The sensitivity of the device to the extrinsic base doping profile is demonstrated and a model based on the generation of hot carriers by Auger recombination and bond breaking by these hot carriers is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340131
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  • 6
    Electronic Resource
    Electronic Resource
    Optical second-harmonic reflection from polycrystalline silicon and its relation to grain boundaries (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1277-1279 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grain boundary contributions to optical second-harmonic generation give rise to an unusually high reflected second-harmonic intensity from polycrystalline silicon. At the grain boundaries, the dangling bonds affect the second order nonlinear susceptibility via the electric dipole contribution. The second-harmonic signal dependence on dangling bonds passivation by hydrogen is experimentally observed to support the grain boundary model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110864
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  • 7
    Electronic Resource
    Electronic Resource
    On resolving hot carrier induced degradation mechanisms in silicon-on-sapphire metal-oxide-semiconductor field-effect transistors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1912-1914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot carrier induced damage in silicon-on-sapphire (SOS) metal-oxide-semiconductor field-effect transistors (MOSFETs) are reported. Various experimental techniques—the peak linear-region transconductance change, extrapolated threshold voltage shift, exponent in time dependence of transconductance, and charge pumping current—are employed to explore the degradation mechanisms. Hot light holes alone in silicon-on-sapphire MOSFETs are found ineffective in generating interface states, but their interaction with trapped electrons are.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110646
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of electromigration of hydrogen in polycrystalline silicon using poly emitter bipolar transistors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2950-2952 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration of hydrogen inside polycrystalline silicon (polysilicon) has been observed for the first time. Experiments were conducted on polysilicon emitter (poly emitter) n-p-n transistors with and without atomic hydrogen inside polysilicon. The current gain (β) of n-p-n was selected to monitor electromigration of hydrogen during current stress because of its high sensitivity to hydrogen passivation of dangling bonds. The major characteristics of hydrogen electromigration are shown in this letter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109180
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  • 9
    Electronic Resource
    Electronic Resource
    Body current scanning: A novel technique for characterizing the floating body effects and parasitic bipolar action in silicon-on-insulator metal-oxide-semiconductor transistors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1435-1437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Body current scanning (BCS) is a new concept that exploits body (substrate) current reversal in NPN bipolar transistors to characterize the floating body effects and parasitic bipolar action in n-channel silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistors. At sufficiently high drain biases, a parasitic bipolar transistor modeled in parallel with the SOI MOS transistor is activated by hole accumulation in the body. BCS directly measures the floating body potential corresponding to the parasitic bipolar base, and is capable of distinguishing between the respective current contributions from MOS and bipolar devices. Consequently, the evaluation of parasitic bipolar and the influence of floating body on SOI device characteristics are facilitated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105279
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  • 10
    Electronic Resource
    Electronic Resource
    Degraded noise characteristics of submicrometer area field effect transistors subjected to plasma etching and Fowler–Nordheim stress (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2860-2862 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of reactive ion etching (RIE) and Fowler–Nordheim (FN) gate current stresses upon both the 1/fγ and random telegraph signal (RTS) noise characteristics of submicrometer gate area metal oxide semiconductor field-effect transistors has been analyzed. While control devices exhibit the Lorentzian noise spectra and discrete switching behavior attributable to single oxide defects, the first layer metal antenna devices exhibit degraded RTSs and near ideal 1/f noise characteristics. An evolution of this 1/f behavior has been reproduced in control devices by subjecting them to a series of UV illuminated FN gate current stresses. Results of this study suggest that multiple oxide traps with a distribution in time constants are generated during RIE and that the amount of oxide degradation generated during plasma etching may be more substantial than that produced during plasma ashing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114809
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