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  • 1
    Online Resource
    Online Resource
    Amsterdam :Elsevier Science & Technology,
    Keywords: Free electron theory of metals. ; Semiconductors. ; Scattering (Physics). ; Electronic books.
    Description / Table of Contents: The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested. The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental data. The subjects dealt with include: - electronic transport theory based on the test-particle and correlation-function concepts; - scattering by phonons, impurities, surfaces, magnons, dislocations, electron-electron scattering and electron temperature; - two-phonon scattering, spin-flip scattering, scattering in degenerate and many-band models.
    Type of Medium: Online Resource
    Pages: 1 online resource (478 pages)
    Edition: 1st ed.
    ISBN: 9780444598233
    Series Statement: Issn Series ; v.Volume 19
    DDC: 530.4/1
    Language: English
    Note: Front Cover -- Carrier Scattering in Metals and Semiconductors -- Copyright Page -- Table of Contents -- Preface to the series -- Preface -- Chapter 1. Quasi-Particles in an Ideal Crystal -- 1.1. Band structure -- 1.2. Quasi-particles -- 1.3. Band structure of cubic semiconductors at the center of the Brillouin zone -- Chapter 2. Scattering -- 2.1. Scattering mechanisms -- 2.2. Transition probability and the principle of detailed balance -- 2.3. Scattering cross section -- 2.4. Relaxation and fluctuation characteristics of a test particle -- 2.5. The relaxation time approximation. The Boltzmann integral as a current in k-space -- 2.6. The method of correlators -- Chapter 3. Electron-phonon interaction -- 3.1. Matrix element of a one-phonon process -- 3.2. The macrofield and microfield as two causes of scattering -- 3.3. Screening -- 3.4. Deformation potential -- 3.5. Macrofields -- 3.6. Matrix elements for scattering by long-wavelength phonons -- 3.7. Scattering by phonons in the pseudopotential method -- Chapter 4. Scattering by long-wavelength phonons in a simple band -- 4.1. Matrix elements -- 4.2. Kinematics of scattering -- 4.3. Relaxation times in a Boltzmann gas -- 4.4 Relaxation times in a Fermi gas -- 4.5. Fluctuation-dissipation theorem for quasi-elastic scattering -- Chapter 5. Scattering by phonons in an anisotropic electron band -- 5.1. Deformation potential scattering in an ellipsoidal valley -- 5.2. Intervalley scattering -- 5.3. Intervalley scattering experiments -- 5.4. Diffusion on the Fermi surface -- Chapter 6. Electron-electron scattering and the electron temperature -- 6.1. Probability of electron-electron scattering -- 6.2. Characteristics of test electron scattering by an electron gas -- 6.3. Effect of electron-electron scattering on the distribution function -- 6.4. Electron temperature relaxation. , 6.5. Effect of electron-electron scattering on the oscillating photoresponse -- 6.6. Electron temperature relaxation time measurement -- Chapter 7. Relaxation characteristics of kinetic effects -- 7.1. Distribution function perturbation in various types of experiments -- 7.2. Averaging over energies -- 7.3. Mobility in semiconductors -- 7.4. Umklapp collisions -- 7.5. Relaxation upon mutual scattering of various types of carriers -- 7.6. Temperature dependences of kinetic effects in metals and semimetals -- Chapter 8. Two-phonon processes -- 8.1. Probabilities of two-phonon transitions -- 8.2. Real and virtual transitions. Compound scattering -- 8.3. Interaction with short-wavelength phonons -- Chapter 9. Scattering by impurities -- 9.1. Neutral impurities in semiconductors -- 9.2. Charged impurities in semiconductors -- 9.3. Partial phase shifts in metals -- 9.4. Resonant scattering by virtual d-levels -- Chapter 10. Scattering by dislocations -- 10.1. Scattering diameter -- 10.2. Experimental investigations -- Chapter 11. Scattering by a crystal surface -- 11.1. General definitions -- 11.2. Coherent scattering -- 11.3. Observation of coherent scattering -- 11.4. Incoherent scattering -- Chapter 12. Scattering in a degenerate band and in a multiband model -- 12.1. Matrix elements for quasi-particle scattering by phonons -- 12.2. Overlap factors -- 12.3. The isotropic model for hole scattering by phonons in a degenerate band -- 12.4. Cyclotron resonance of hot holes in germanium -- 12.5. Scattering by the deformation potential of acoustic phonons in the multiband model -- 12.6. Interband transitions with LO-phonon emission -- 12.7. Electron scattering by holes -- 12.8. Scattering by ionized impurities -- Chapter 13. Spin-flip induced by spin-orbit interaction -- 13.1. Spin-flip time -- 13.2. Scattering by nonmagnetic impurities. , 13.3. Scattering by phonons -- 13.4. Precession mechanism of spin relaxation -- 13.5. Spin relaxation in metals - experimental data -- 13.6. Spin relaxation in semiconductors - experimental data -- 13.7. Spin-flip at a surface -- Chapter 14. The effect of a magnetic field on scattering -- 14.1. States in a magnetic field and the description of scattering -- 14.2. The effect of Larmor motion on relaxation -- 14.3. Scattering by acoustic phonons in an ultraquantum field - Boltzmann gas -- 14.4. Scattering by phonons in a quantized Fermi gas -- 14.5. Resonance inelastic scattering -- 14.6. Static imperfections -- 14.7. Electron-electron scattering in the ultraquantum limit -- 14.8. Spin-flip is a quantizing magnetic field - Kane model -- Chapter 15. Exchange and spin interaction -- 15.1. Interaction between a conduction electron and a magnetic atom -- 15.2. Scattering by a spin lattice -- 15.3. Magnetic impurities -- 15.4. Skew scattering -- 15.5. Electron spin relaxation in exchange interaction with holes -- Appendix: Parameters of certain semiconductor materials -- References -- Author index -- Subject index -- Materials index -- Cumulative index.
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Quantitative Spectroscopy and Radiative Transfer 44 (1990), S. 59 
    ISSN: 0022-4073
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 305 (1994), S. 234-237 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 28 (1969), S. 604-605 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    JETP letters 67 (1998), S. 607-612 
    ISSN: 1090-6487
    Keywords: 71.70.Di ; 71.70.Gm ; 72.10.−d
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We consider the influence of spin effects on the inter-Landau level electron-electron scattering rate in a two-dimensional electron gas. Because of exchange spin splitting, the Landau levels are not equidistant. This leads to the suppression of Auger processes and a nonlinear dependence of the lifetime on the concentration of excited electrons even at very low excitation levels.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 45 (1981), S. 49-66 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The processes of heating and cooling of a metal film evaporated on a dielectric substrate are analyzed. The phonon propagation in the substrate is assumed to be diffusive due to static defect scattering.
    Type of Medium: Electronic Resource
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