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  • 1
    Electronic Resource
    Electronic Resource
    Exciton transport and degenerate four wave mixing in topologically disordered systems (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 5899-5911 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The static and dynamical properties of excitons in a lattice with a random distribution of polarizable atoms are studied using Green's function techniques. Exciton transport is related to the configurationally averaged particle–hole Green's function which is calculated using the ladder diagram approximation. Degenerate four wave mixing (D4WM) using resonant pump beams and an off resonant probe is shown to provide a direct probe for exciton transport. A disorder induced extra resonance is predicted whose width is proportional to the exciton diffusion coefficient. Numerical calculations are presented for the diffusion coefficient and the D4WM signal as the excitation energy is tuned across the exciton band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464881
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  • 2
    Electronic Resource
    Electronic Resource
    Theory of mode-locked semiconductor lasers with finite absorber relaxation times (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1938-1940 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the influence of a finite absorber relaxation time on passively mode-locked semiconductor lasers. We find that the mode-locking mechanism of Haus is surprisingly susceptible to small perturbations and small changes in the parameters. Even when the absorber relaxation time is much larger than the pulse duration, it typically is still short enough to be a crucial part of the physics of mode-locking. Allowing for a finite absorber relaxation time, we find that stable operation of a mode-locked semiconductor is possible over a wide range of parameters. We argue that the pulse duration is inversely proportional to the square root of the pulse energy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118785
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