Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 1879-1883
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Deep level transient spectroscopy and transport properties measurements were performed on close-spaced vapor transport deposited epitaxial GaAs. The deep EL2 donor level was consistently observed in all of the layers. A side band at around 300 K was found to be present in relatively high concentration close to the as-grown surface of the epitaxial films. The multilevel impurity model treatments suggest the existence of an off-stoichiometry-induced deep acceptor level, related to possible gallium vacancies, in As-rich GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345617
Permalink
|
Location |
Call Number |
Limitation |
Availability |