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  • 1
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Spectrum analysis. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (797 pages)
    Edition: 1st ed.
    ISBN: 9780444600547
    Series Statement: Issn Series ; v.Volume 27
    Language: English
    Note: Front Cover -- Landau Level Spectroscopy -- Copyright Page -- Table of Contents -- Prefac to The Series -- Introduction -- Part I: Intraband Effects -- Chapter 1. Cyclotron Resonance -- 1. Introduction -- 2. Cyclotron resonance in Si and Ge - as a transport experiment -- 3. Cyclotron resonance as a kinetics experiment -- 4. Cyclotron resonance in the quantum limit -- 5. Cyclotron resonance in III-V and 11-VI compounds -- 6. Cyclotron resonance in the most challenging materials -- 7. Germanium and silicon revisited -- 8. Concluding remarks -- References -- Chapter 2. Phonon-assisted Cyclotron Resonance -- 1. Introduction -- 2. Absorption coefficient for phonon-assisted transitions -- 3. Isotropic parabolic band -- 4. Spin and band nonparabolicity -- 5. Experimental technique* -- 6. PACR peaks (experiment) -- 7. Broadening of PACR lines -- 8. Fine structure of PACR lines -- 9. Multiphonon processes -- 10. Many-valley semiconductors -- 11. Two-dimensional systems -- 12. Impurity transitions -- 13. Effect of a direct current electric field -- 14. Phonon-assisted cyclotron resonance and magnetophonon resonance -- References -- Chapter 3. Polaron Effects in Cyclotron Resonance -- 1. Introduction -- 2. Weak coupling, bulk semiconductors -- 3. Intermediate coupling, bulk ionic crystals -- 4. Polarons confined at a heterojunction -- References -- Chapter 4. Electric-Dipole Spin Resonances -- 1. Introduction -- 2. Basic formalism of the theory -- 3. COR theory in the Zeeman limit -- 4. Angular indicatrices and selection rules -- 5. Three-dimensional spectrum with linear terms in the dispersion law -- 6. Inversion asymmetry mechanism for n-type InSb bands -- 7. EDSR and EPR interference -- 8. COR in semiconductors with inversion centre -- 9. COR in narrow-gap and zero-gap semiconductors -- 10. COR on shallow local centres. , 11. Two-dimensional systems: heterojunctions and MOS structures -- 12. One-dimensional systems: dislocations -- 13. Shape of the EDSR band -- 14. EDSR induced by lattice imperfections -- 15. Conclusion -- Acknowledgements -- References -- Chapter 5. Spin-Flip Raman Scattering -- 1. Introduction -- 2. Theory of SFR scattering -- 3. Principles of investigation of SFR scattering -- 4. Application of the SFR laser -- 5. Experimental and theoretical results of nonmagnetic semiconductors -- 6. Experimental and theoretical results of diluted magnetic semiconductors (DMS) -- References -- Chapter 6. Magnetoplasma Effects in IV-VI Compounds -- 1. Introduction -- 2. General properties of IV-VI compounds related to magnetoplasma effects -- 3. The classical oscillator model -- 4. Numerical data on the dielectric function, and transmission and reflectance spectra -- 5. Magnetoplasma effects in two-dimensional systems -- 6. Magnetoplasma effects in strained semiconductor layers -- 7. Magnetoplasma reflection using the strip line technique -- 8. Dynamical conductivity in the frequency range of coupled LOphonon- plasmon excitations -- 9. Linear-response theory -- 10. Conclusions -- Acknowledgments -- References -- Part II: Interband Effects -- Chapter 7. Interband Magneto-optics of Semiconductors as Diamagnetic Exciton Spectroscopy -- 1. Introduction -- 2. Modern theoretical fundamentals of interband magneto-optics -- 3. The exciton nature of oscillatory magnetoabsorption spectra -- 4. Experimental data on oscillatory magnetoabsorption spectra -- 5. Conclusion: band parameter calculation from diamagnetic exciton spectra -- Note added in proof -- References -- Chapter 8. Interband Magneto-optics in Narrow-gap Semiconductors -- 1. Introduction -- 2. Theory -- 3. Experiments -- References. , Chapter 9. Intraband and Interband Magneto-optical Transitions in Semiconductors -- 1. Introduction -- 2. Coupled-band Ρ * ρ theory -- 3. Three-level model Energies and wave functions -- 4. Electron-photon interaction -- 5. Intraband magneto-optical resonances -- 6. Interband transitions -- 7. Summary -- Appendix -- Acknowledgment -- References -- Chapter 10. Magneto-Optical Phenomena in Electric and Magnetic Fields -- 1. Introduction -- 2. Light absorption in crossed fields (weak electric fields) -- 3. Effect of Coulomb interaction on light absorption in crossed fields (weak electric fields) -- 4. The Franz-Keldysh effect in crossed fields -- 5. Light absorption in parallel electric and magnetic fields -- 6. Conclusion -- References -- Chapter 11. Landau Level Spectroscopy: Interband Effects and Faraday Rotation -- 1. Introduction -- 2. Macroscopic theory -- 5. Kramers-Kronig relations -- 4. Fundamental microscopic models -- 5. The resonant and nonresonant Faraday effects- a detailed, representative and comparative analysis of germanium and silicon -- 6. Survey of other substances and influences -- 7. Measurement methods -- References -- AUTHOR INDEX -- SUBJECT INDEX* -- CUMULATIVE INDEX, VOLUMES 1-27.
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  • 2
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Magnetooptics. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (849 pages)
    Edition: 1st ed.
    ISBN: 9780444600431
    Series Statement: Issn Series ; v.Volume II
    Language: English
    Note: Front Cover -- Landau Level Spectroscopy -- Copyright Page -- Table of Contents -- PREFACE TO THE SERIES -- Introduction -- PART III: Two Dimensional Systems -- Chapter 12. Magnetospectroscopy of Confined Semiconductor Systems -- 1. Introduction -- 2. Materials and structures - the physical systems -- 3. Theoretical background -- 4. Experimental -- 5. Free-carrier states -- 6. Confined impurities -- 7. The electron-phonon interaction -- 8. Summary -- References -- Chapter 13. The Magnetophonon Effect in Two Dimensions -- 1. Introduction -- 2. Theory and analysis -- 3. The normal resonances -- 4. Hot-electron magnetophonon resonance -- 5. Conclusions -- Acknowledgements -- References -- Chapter 14. The Energy Spectrum and Magnetooptics of Band-Inverting Heterojunctions -- 1. Introduction. When does a smooth interface contain boundstates? -- 2. The band-inverting heterojunction on the basis of a two-band semiconductor -- 3. The abrupt band-inverting junction on the basis of Hg1-xCdxTe -- 4. The best material for the band-inverting heterojunction: Pb1-xSnxTe versus Hg1-xCdxTe -- 5. Another example of a supersymmetric semiconductor structure: the domain wall in a semiconductor-ferroelectric -- 6. Conclusion -- References -- Chapter 15. Electrodynamics of Two-dimensional Electron Systems in High Magnetic Fields -- 1. Introduction -- 2. Bulk, surface and two-dimensional (2D) plasmons and magnetoplasmons -- 3. Edge magnetoplasmons (EMP) in 2D electron systems -- 4. Electromagnetic waves in 2D systems in the quantum Halleffect regime -- 5 . Conclusions -- Note added in proof -- PART IV: Transport -- Chapter 16. Landau Emission -- 1. Introduction -- 2. Radiative transitions between Landau levels -- 3. Experimental techniques -- 4. Landau emission in III-V semiconductors -- 5. Landau emission in two-dimensional systems. , 6. Landau level electronic lifetimes -- 7. The p-Ge far-infrared laser -- 8. Summary -- Acknowledgements -- References -- Chapter 17. The Shubnikov-de Haas Effect: An Introduction to the Theory -- 1. Introduction -- 2. Smooth magnetoresistance and SdH effect -- 3. Basic theory -- 4. Improvements -- 5. Miscellaneous -- References -- Chapter 18. The Shubnikov-de Haas Effect in Semiconductors: A Comprehensive Review of Experimental Aspects -- 1. Introduction and background -- 2. Experimental equipment and measurements -- 3. Data analysis and extraction of material parameters -- 4. Results classified by semiconducting material -- 5. Application of the Shubnikov-de Haas effect to other studies -- 6. Frontiers for future studies and applications of the Shubnikov-de Haas effect -- 7. Summary and conclusions -- Acknowledgements -- References -- Chapter 19. Magnetoimpurity Resonances in Semiconductor Transport -- 1. Introduction -- 2. Classification of transitions -- 3. Resonance relations -- 4. Influence of resonances on the transport coefficients -- 5. Inversion of magnetoimpurity resonances -- Acknowledgements -- References -- Chapter 20. Magnetophonon Resonance -- 1. Introduction -- 2. Magnetophonon resonance: introductory remarks -- 3. Theory of MPR oscillations of transverse magnetoresistance -- 4. Dynamical screening of the electron-phonon interaction and its influence on the transverse magnetoresistance -- 5. The form of MPR peak for the transverse magnetoresistance -- 6. Longitudinal magnetoresistance -- 7. Magnetophonon spectroscopy -- 8. MPR spectroscopy of phonons -- 9. The hot-electron MPR -- 10. Conclusion -- References -- PART V: Various Topics -- Chapter 21. Shallow Magneto-impuritiesin Semiconductors -- 1. Introduction -- 2. Hydrogenic donor in a magnetic field. General considerations -- 3. Perturbation approach. , 4. Variational approach. Ground state -- 5. Variational approach. Excited states -- 6. Adiabatic approach -- 7. Expansion approach -- 8. Quantum numbers. Notation. Selection rules for opticaltransitions -- 9. Screening -- 10. Multi-impurity effects. Nonmetal-metal transition -- 11. Band-structure effects. Magneto-acceptors -- 12. Semimagnetic materials. Two-dimensional systems -- Acknowledgment -- References -- Chapter 22. Oscillatory Effects and the Local Geometry of Fermi Surfaces -- 1. Theory -- 2. Fermi surface of cadmium in a to pological phase transition under pressure -- 3. Temperature dependence of the Fermi surface in gold -- 4. The de Haas-van Alphen effect in heavy-fermion compound CeCu6 -- 5. Macroscopic quantum coherence and localization of electrons inmagnesium -- 6. Isotope effect in the electron structure of palladium hydrides -- 7. The de Haas-van Alphen effect in alkali metal dispersions andthe Fermi surface of lithium -- References -- Author Index -- Subject Index -- Cumulative Index, Volumes 1-27.
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  • 3
    Keywords: Physics ; Condensed matter ; Physics ; Condensed matter ; Physics ; Condensed Matter
    Description / Table of Contents: Precision determination of h/e2 and the fine-structure constant from magneto-transport measurements on 2D electronic systems -- Gauge invariance and the quantised hall effect in two-dimensional systems -- Some remarks on the present understanding of the quantized hall effect in two dimensions -- Quantum transverse and hall resistivities in silicon MOS inversion layers at temperatures down to 12 mK -- Possible application of the quantized hall resistance to the realization of the electrical units -- Temperature dependence of the quantum hall effect in In0.53Ga0.47As-InP heterojunctions -- The quantized hall resistance and the Josephson effect -- On the two-dimensional wigner localization in high magnetic fields -- Negative magnetoresistance and Anderson localization in Si-MOSFETs and other 2D systems in semiconductor interfaces -- Electron-electron interaction effects in p-type germanium inversion layers -- Anharmonic effects in two-dimensional electron solids in magnetic fields -- Localisation and scaling of resistance of disordered systems including magnetic field effects -- High field magnetotransport IN GaAs/AlGaAs heterojunctions and SI mosfets -- Magnetotransport in GaInAs-InP heterojunctions and superlattices -- Quantum transport in GaInAs-AlInAs heterojunctions -- Bias voltage dependence of the temperature of hot n-Si inversion layer electrons in high magnetic fields -- Magnetoresistance in a two-dimensional impurity band -- Magnetoconductivity and cyclotron resonance studies on Na+-contaminated Si-SiO2-interfaces -- On the screening of impurities by a two dimensional electron gas in high magnetic fields -- Valley phase transition of Si inversion layers in high magnetic fields -- Electrical properties of layered materials in high magnetic fields -- Quantum oscillatory effect in graphite intercalation compounds -- Magneto-optical experiments on a thin InAs LAyer confined between GaSb in a parallel and perpendicular magnetic field -- Electronic structure of semiconductor superlattices -- Inelastic light scattering by two dimensional electron systems in high magnetic fields -- Anomalous cyclotron resonance of 2D electrons in AlxGa1?xAs/GaAs heterojunctions -- Faraday rotation and ellipticity in electron inversion layers of Si MOS structures -- Magnetooptical studies of deep impurities in III-V compounds -- Magneto optics of II-VI compounds under low and high excitation -- Magneto-reflectance of the B-exciton of CdS -- Magneto-optical studies of donor impurities under high pressure -- Magnetically tunable far infrared emitters and detectors -- Magnetooptical studies of phase transition in IV-VI compounds -- Transport properties in the active layer of a double heterostructure infection laser measured by a strong magnetic field -- Quantum oscillations of indirect interband magnetoabsorption below the Burstein edge -- Neutral bound excitons in a magnetic field -- Magneto-oscillation of relaxation time in electron hole-drops -- Experimental verification of nodal surface number conservation rule in magneto-optical effects of hydrogenic exciton -- Identification of contaminating donors in III-V compounds by far-infrared laser magneto-optical studies -- Magnetoplasma oscillations in a small conducting sphere -- Two-Photon spectroscopy in InSb at high magnetic fields -- Electron spin resonance in InSb under uniaxial stress -- Far-Infrared cyclotron resonance of hot carriers in InSb -- Magneto-thermal conductivity oscillations in n-type InSb -- Infrared emission due to the magnetoelectric-photo effect in InSb -- Optically pumped recombination radiation in zincblende semiconductors under crossed magnetic and strain fields -- The metal- non metal transition in n-type InSb in high magnetic fields -- Shubnikov-de Haas effect in heavily doped n-InSb under pressure -- Interaction between T and L minima associated impurity states in n-InSb -- Anomalous NMR relaxation peak in InSb in the extreme quanium limit -- Dielectric function of Zero-Gap HiCdTe and HgMnte in a magnetic field -- Fermi surface properties of Pb71Sn29Te above and below the structural phase transition -- Evidence of fermi level pinning in Pb Sn1-xTex/In at high magnetic fields -- Magnetotransport properties of Hg0.8Cd0.2Te in pulsed fields up to 35 T -- Influence of an acceptor state on transport in zero-gap Hgl?xMnxTe -- Shubnikov-de Haas effect in amorphous Cd3As2 -- Hopping conduction in the magnetic field -- Effect of dilute ionized impurities on the magnetoresistivity of Bismuth in high magnetic fields -- A magnetic field induced two-dimensional stripping of the polaron -- Variable range hopping in indium phosphide near the metal non metal transition in presence of a magnetic field -- A kinetic approximation for quantum magneto-transport -- Scattering mechanisms in n-CdTe under classical and quantum limit conditions -- Magnetophonon and magnetoimpurity resonances in N-Germanium -- Classical transport effects revisited : A basis for new applications of high magnetic fields -- Impurities in semimagnetic semiconductors -- Bound magnetic polarons in semimagnetic semiconductors -- “Spin-doping” in semiconductor physics -- Magnetically stimulated conductivity of magnetic semiconductor and related phenomena -- Binding of an electron in the field of a finite electric dipole in a magnetic field -- Low-temperature magnetocapacitance measurements on n-type silicon: Spin-dependent electrical polarizabilities of donor clusters -- Phase transitions in high magnetic fields -- High magnetic field research at the Francis bitter national magnet laboratory -- High magnetic fields at the Clarendon Laboratory, Oxford -- Semiconductor experiments in megagauss and submegagauss fields -- High field superconductors -- The generation of high magnetic fields in Grenoble - installations and magnets -- Magnets I have known
    Type of Medium: Online Resource
    Pages: 1 Online-Ressource (XII, 557 p. 49 illus)
    Edition: Springer eBook Collection. Physics and Astronomy
    ISBN: 9783540394723 , 9783540119968
    Series Statement: Lecture Notes in Physics 177
    Language: English
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  • 4
    Publication Date: 2017-03-18
    Description: The air-sea gas transfer velocity k is frequently estimated as an empirical function of wind speed. However, it is widely recognized that k depends on processes other than wind speed alone. The small-eddy model, which describes periodic events of small eddies disturbing the sea surface with water from below, suggests a direct relation between k and the dissipation rate of turbulent kinetic energy ε at the air-sea interface. This relation has been proven both in laboratories and in the field in various freshwater and coastal environments, but to date has not been verified in open ocean conditions. Here, concurrent North Atlantic field observations of ε and eddy covariance measurements of DMS and CO 2 air-sea gas flux are presented. Using ε measurements, we compare the small-eddy model at various depths to previously published observations. Extrapolating the measured ε profiles to the thickness of the viscous sublayer allows us to formulate a function of k that depends solely on the water side friction velocity , which can be inferred from direct eddy covariance measurements of the air side friction velocity . These field observations are generally consistent with the theoretical small-eddy model. Utilizing a variable Schmidt number exponent in the model, rather than a constant value of yields improved agreement between model and observations. This article is protected by copyright. All rights reserved.
    Print ISSN: 0148-0227
    Topics: Geosciences , Physics
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A semiempirical model is presented that correlates the broadening of the absorption edge with both transitions below the energy gap and with transitions by the Kane band model. This model correctly fits both the absorption and luminescence spectra of narrow-gap (Hg,Cd)Te samples that have been grown by the traveling heater method as well as by molecular-beam epitaxy. The accuracy of the band-gap determination is enhanced by this model.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3492-3496 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here on studies of the growth mechanism of CdTe during molecular beam epitaxy on (100) oriented CdTe substrates by reflection high energy electron diffraction (RHEED). The growth rate of CdTe as a function of the Cd/Te ratio in the impinging molecular beam was investigated in detail. The growth rates were determined by RHEED intensity oscillations. Fluxes were calibrated by film thickness measurements. From the growth rates dependence on the Cd/Te flux ratio we determined the Cd and Te sticking coefficients by comparing the results with kinetic models of molecular beam epitaxial growth. Both Cd and Te sticking coefficients are dependent on the surface concentration of free Cd and Te sites, respectively. The main result is that the influence of a precursor state has to be taken into account to describe the experimental results.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3305-3312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of (100) Hg1−xCdxTe epilayers grown by molecular beam epitaxy have been systematically investigated for different Hg/Te flux ratios. The hillock density, electron concentration and the electron mobility depend strongly on the Hg/Te flux ratio. A minimum in the hillock density correlates well with the highest mobilities and the lowest concentrations. As is well known electrical properties are strongly influenced by structural defects. Structural defects such as twins and defects due to nonstoichiometry can be largely reduced by optimizing the Hg/Te flux ratio. It is shown that an optimum Hg/Te flux ratio exists within a narrow range between 270 and 360 at the growth temperature of 180 °C, in contrast with the larger range of the Hg/Te flux ratio over which single crystalline growth could be maintained. The difficulties encountered in the x value determination from normal transmission curves, i.e., from E0(x), due to the Burstein–Moss shift are discussed. In order to overcome these difficulties, the x values of the Hg1−xCdxTe epilayers were also determined from E1(x). A calibration of E1(x) resulted in small but significant discrepancies with the literature. Extrinsic As doping using the δ doping technique is demonstrated and a very high atomic sheet density of 1.2×1013 cm−2 is obtained.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7385-7388 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated oxygen on CdTe substrates by means of x-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). A Te oxide layer that was at least 15 A(ring) thick was found on the surface of as-delivered CdTe substrates that were mechanically polished. This oxide is not easily evaporated at temperatures lower than 350 °C. Furthermore, heating in air, which further oxidizes the CdTe layer, should be avoided. Etching with HCl acid (15% HCl) for at least 20 s and then rinsing with de-ionized water reduces the Te oxide layer on the surface down to 4% of a monoatomic layer. However, according to XPS measurements of the O 1s peak, 20%–30% of a monoatomic layer of oxygen remains on the surface, which can be eliminated by heating at temperatures ranging between 300 and 340 °C. The RHEED patterns for a molecular beam epitaxially (MBE)-grown CdTe film on a (100) CdTe substrate with approximately one monoatomic layer of oxidized Te on the surface lose the characteristics of the normal RHEED patterns for a MBE-grown CdTe film on an oxygen-free CdTe substrate.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 268-272 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a detailed investigation on the Te-stabilized (2×1) and the Cd-stabilized c(2×2) surfaces of (100) CdTe substrates. The investigation demonstrates for the first time that both laser illumination and, to a greater extent, high-energy electron irradiation increase the Te desorption and reduce the Cd desorption from (100) CdTe surfaces. Thus it is possible by choosing the proper growth temperature and photon or electron fluxes to change the surface reconstruction from the normally Te-stabilized to a Cd-stabilized phase.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 212-217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy studies of CdTe-GaAs interfaces are reported. The growth start of CdTe on GaAs can be nearly stoichiometric if convenient growth parameters are chosen. The valence-band offset between these two materials is found to be large (470 meV). Cd-Te-metal-GaAs multilayers have been grown with very thin metal films. The CdTe-GaAs band offset is not influenced by such intermediary metal layers. The experimentally obtained value for the valence-band offset is compared with recent theoretical calculations taking into account interface dipoles.
    Type of Medium: Electronic Resource
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