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  • 1
    Book
    Book
    M/V "Nimos" sections : thermal profiles of the Coral and Bismarck Seas, June 1983 to July 1984 (1986)
    Details Availability
    Type of Medium: Book
    Pages: 49 S , graph. Darst
    ISBN: 0643039600
    Series Statement: Report / CSIRO Marine Laboratories 173
    Language: English
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  • 2
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    Observation of manganese deposits in the Great Abaco Canyon, Blake Plateau by the ALVIN submersible in 1975 and 1977 (1982)
    PANGAEA
    In:  Supplement to: Mullins, Henry T; Keller, G H; Kofoed, John; Lambert, D N; Stubblefield, W L; Warme, J E (1982): Geology of Great Abaco Submarine Canyon (Blake Plateau): Observations from the research submersible “Alvin”. Marine Geology, 48(3-4), 239-257, https://doi.org/10.1016/0025-3227(82)90099-8
    Details
    Publication Date: 2023-08-28
    Description: Scientists from the Woods Hole Oceanographic Institution, the U.S. Navy, the State University of New York at Albany, Wesleyan University, Nine dives in the research submersible ?Alvin? were made into Great Abaco Submarine Canyon to depths ranging from 1850 to 3666 m. Our observations indicate that the walls of this canyon are distinctly terraced, consisting of nearly vertical to overhanging rock cliffs and intervening, less steep sediment-covered slopes. The wall rock consists mostly of massive, shallow-water limestones and dolostones of Cretaceous age, coated on exposed surfaces with manganese oxides. These rocks are heavily jointed/fractured and thus very blocky to angular in appearance, with sponges and other sessile organisms commonly attached. Talus slopes and sedimentary breccia deposits containing angular boulders are present at the base of these steep escarpments. Short-term bottom current measurements in the axis of the eastern part of the canyon indicate that currents are relatively weak, reaching velocities of only 10 cm/sec. This relatively placid setting is further corroborated by the abundance of turtle grass (Thalassia) found along the canyon axis. However, abundant subdued, symmetrical ripple marks and large scour depressions at the base of boulders, indicate that high-energy events sporadically impact the canyon axis. Contemporary erosional activity along the axis of the western (headward) part of the canyon appears to be more significant, as evidenced by asymmetrical ripple marks, sand waves and bioerosion. Great Abaco Canyon has evolved with time via a variety of processes, including: (1) faulting: (2) subsidence; (3) defacement; and (4) erosional down-cutting. The location, orientation and initiation of this canyon appear to be structurally controlled by the Great Abaco Fracture Zone during pre-Santonian time. Regional subsidence during the Mesozoic allowed the walls of Great Abaco Canyon to build vertically by accretion of shallow-water limestones, whereas joint-controlled defacement has widened the canyon while maintaining steep walls. Erosional down-cutting in the canyon axis by carbonate sediment gravity flows also appears to have been important episodically, particularly during the Miocene and Pleistocene.
    Keywords: ALV570; ALV570-1C; ALV570-2C; ALV756; ALV756-1D; Alvin; Blake Plateau, Atlantic Ocean; Deposit type; DEPTH, sediment/rock; Description; Event label; File name; Grab; GRAB; Identification; NOAA and MMS Marine Minerals Geochemical Database; NOAA-MMS; Photo/Video; Position; PV; Quantity of deposit; Sediment type; Substrate type; Uniform resource locator/link to image; Visual description
    Type: Dataset
    Format: text/tab-separated-values, 25 data points
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    DATA PANGAEA
  • 3
    Electronic Resource
    Electronic Resource
    δ-Opioids Stimulate Inositol 1,4,5-Trisphosphate Formation, and so Mobilize Ca2+ from Intracellular Stores, in Undifferentiated NG108-15 Cells (1996)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 66 (1996), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: δ-Opioids mobilize Ca2+ from intracellular stores in undifferentiated NG108-15 cells, but the mechanism involved remains unclear. Therefore, we examined the effect of [d-Pen2,5]enkephalin on inositol 1,4,5-trisphosphate formation in these cells. [d-Pen2,5]enkephalin caused a dose-dependent (EC50 = 3.1 nM) increase in inositol 1,4,5-trisphosphate formation (measured using a specific radioreceptor mass assay), which peaked (25.7 ± 1.2 pmol/mg of protein with 1 µM, n = 9) at 30 s and returned to basal levels (10.6 ± 0.9 pmol/mg of protein, n = 9) within 4–5 min. This response was fully naloxone (1 µM) reversible and pertussis toxin (100 ng/ml for 24 h) sensitive. Preincubation with Ni2+ (2.5 mM) or nifedipine (1 µM) had no effect on the [d-Pen2,5]enkephalin (1 µM)-induced inositol 1,4,5-trisphosphate response, and K+ (80 mM) was unable to stimulate inositol 1,4,5-trisphosphate formation, indicating Ca2+ influx-induced activation of phospholipase C is not involved. Preincubation with the protein kinase C inhibitor Ro 31-8220 (1 µM) enhanced, whereas acute exposure to phorbol 12,13-dibutyrate (1 µM) abolished, the [d-Pen2,5]enkephalin (0.1 µM)-induced inositol 1,4,5-trisphosphate response, suggesting protein kinase C exerts an autoinhibitory feedback action. [d-Pen2,5]Enkephalin also dose-dependently (EC50 = 2.8 nM) increased the intracellular [Ca2+], which was maximal (24 nM increase with 1 µM, n = 5) at 30 s. This close temporal and dose-response relationship strongly suggests that δ-opioid receptor-mediated increases in intracellular [Ca2+] results from inositol 1,4,5-trisphosphate-induced Ca2+ release from intracellular stores, in undifferentiated NG108-15 cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1996.66041462.x
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  • 4
    Electronic Resource
    Electronic Resource
    μ-Opioid Receptor Stimulation of Inositol (1,4,5)Trisphosphate Formation via a Pertussis Toxin-Sensitive G Protein (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 62 (1994), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The cellular mechanisms underlying opioid action remain to be fully determined, although there is now growing indirect evidence that some opioid receptors may be coupled to phospholipase C. Using SH-SY5Y human neuroblastoma cells (expressing both μ-and δ-opioid receptors), we demonstrated that fentanyl, a μ-preferring opioid, caused a dose-dependent (EC50= 16 nM) monophasic increase in inositol (1,4,5)trisphosphate mass formation that peaked at 15 s and returned to basal within 1–2 min. This response was of similar magnitude (25.4 ± 0.8 pmol/mg of protein for 0.1 μM fentanyl) to that found in the plateau phase (5 min) following stimulation with 1 mM carbachol (18.3 ± 1.4 pmol/mg of protein), and was naloxone-, but not naltrindole-(a δ antagonist), reversible. Further studies using [d-Ala2, MePhe4, Gly(ol)5]enkephalin and [d-Pen2,5]enkephalin confirmed that the response was specific for the μ receptor. Incubation with Ni2+ (2.5 mM) or in Ca2+-free buffer abolished the response, as did pretreatment (100 ng/ml for 24 h) with pertussis toxin (control plus 0.1 μM fentanyl, 26.9 ± 1.5 pmol/mg of protein; pertussis-treated plus 0.1 μM fentanyl, 5.1 ± 1.3 pmol/mg of protein). In summary, we have demonstrated a μ-opioid receptor-mediated activation of phospholipase C, via a pertussis toxin-sensitive G protein, that is Ca2+-dependent. This stimulatory effect of opioids on phospholipase C, and the potential inositol (1,4,5)trisphosphate-mediated rises in intracellular Ca2+, could play a part in the cellular mechanisms of opioid action.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1994.62031009.x
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1817-1822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures (SHs) grown by metalorganic chemical vapor deposition are investigated at low temperature using photoluminescence measurements. The formation of a two-dimensional electron gas at the heterojunction is verified by temperature-dependent Hall mobility and 300 K capacitance-voltage measurements. Radiative recombination is observed between the electrons in two-dimensional quantum states at the heterointerface and the holes in the flat-band region or bound to residual acceptors both in undoped and modulation-doped AlGaN/GaN SHs. These peaks disappear when the top AlGaN layer is removed by reactive ion etching. In addition, the photoluminescence results under different laser excitation intensity and lattice temperature are also described for undoped and modulation-doped AlGaN/GaN SHs with various Al compositions and growth interrupt times. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330767
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  • 6
    Electronic Resource
    Electronic Resource
    Selective regrowth of Al0.30Ga0.70N p–i–n photodiodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2810-2812 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the device performance of selective-area regrown Al0.30Ga0.70N p–i–n photodiodes. Tensile strain, induced by the lattice mismatch between AlxGa1−xN and GaN, leads to cracking above the critical thickness in layers with high aluminum concentration. Selective-area regrown devices with ≤70 μm diameters were fabricated without signs of cracking. These devices show low dark current densities with flat photoresponse and a forward turn-on current of ∼25 A/cm2 at 7 V. A quantum efficiency greater than 20% was achieved at zero bias with a peak wavelength of λ=315 nm. A differential resistance of R0=3.46×1014 Ω and a detectivity of D*=4.85×1013 cm Hz1/2 W−1 was demonstrated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322374
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  • 7
    Electronic Resource
    Electronic Resource
    High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2918-2920 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and investigated high-voltage GaN vertical Schottky-barrier rectifiers grown by metalorganic chemical vapor deposition. A mesageometry Schottky-barrier rectifier having a 5-μm-thick i region, and processed using reactive-ion etching, exhibited a reverse breakdown voltage of −450 V (at 10 mA/cm2) and an on-resistance of 23 mΩ cm2. For comparison, we have also applied wet chemical etching for the fabrication of mesageometry Schottky-barrier rectifiers. The 2-μm-thick i-region GaN mesa-Schottky rectifiers showed a breakdown voltage of −310 and −280 V for wet-etched and dry-etched devices, respectively, and an on-resistance of 8.2 and 6.4 mΩ cm2, respectively. These results indicate that the performance of the wet-etched rectifiers is comparable to or better than that of comparable dry-etched devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322050
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  • 8
    Electronic Resource
    Electronic Resource
    Back illuminated AlGaN solar-blind photodetectors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1900-1902 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth, fabrication, and characterization of AlxGa1−xN (0≤x≤0.60) heteroepitaxial back-illuminated solar-blind p-i-n photodiodes on (0001) sapphire substrates. The group III-nitride heteroepitaxial layers are grown by low-pressure metalorganic chemical vapor deposition on double polished sapphire substrates using various growth conditions. The back-illuminated devices exhibit very low dark current densities. Furthermore, they exhibit external quantum efficiencies up to 35% at the peak of the photoresponse (λ∼280 nm). Improvements were made to the growth technique in order to achieve crack-free Al0.4Ga0.6N active regions on a thick Al0.6Ga0.4N window layer and to obtain activated p-type Al0.4Ga0.6N layers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311821
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2503-2505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epitaxial layers with different crystalline quality grown on sapphire substrates by metalorganic chemical vapor deposition are investigated using time-resolved photoluminescence at 300 K. It is found that the time-dependent photoluminescence of low-quality GaN decays faster than that of the high-quality GaN films. The time constants for the dual-exponential decay of the photoluminescence are calculated to be 50 and 250 ps for high-quality undoped GaN and 30 ps for low-quality undoped GaN. For high-quality Si-doped GaN, time constants of 150 and 740 ps are extracted while corresponding time constants of 40 and 200 ps are measured for low-quality Si-doped GaN. We believe that the time constant of 740 ps measured for our high-quality Si-doped GaN is the longest ever reported for thin GaN/sapphire films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318396
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  • 10
    Electronic Resource
    Electronic Resource
    Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1537-1539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth and characterization of InGaN heteroepitaxial thin films and quantum-well heterostructures on (0001) sapphire substrates. The III-N heteroepitaxial layers are grown by metalorganic chemical vapor deposition on sapphire substrates using various growth conditions. A comparison of the 300 K photoluminescence (PL) spectra of the samples indicates that a higher PL intensity is measured for the quantum-well structures having an intentional n-type Si-doping concentration. Furthermore, three-, five-, and eight-period InGaN quantum-well structures exhibit similar narrow PL spectra. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119959
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