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  • 1
    Electronic Resource
    Electronic Resource
    Optimization of gate dopant concentration and microstructure for improved electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 934-936 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the effects of gate dopant species (boron, arsenic, or phosphorous) concentration (1×1019 cm−3–1×1021 cm−3) and microstructure (as-deposited amorphous or polycrystalline silicon gate) on the electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides (60 A(ring)). In order to minimize polysilicon depletion, a high gate dopant concentration is desirable. However, for devices with BF2 doped gates, it is found that because of boron penetration through the thin gate oxide, device characteristics degrade as the gate doping concentration increases, thus an intermediate gate doping must be chosen. In contrast, samples with arsenic and phosphorous doped gates show no degradation as the doping level increases. Optimization of gate microstructure for N2O and O2 dielectrics is also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116948
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  • 2
    Electronic Resource
    Electronic Resource
    Surface cleaning effect on dielectric integrity for ultrathin oxynitrides grown in N2O (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1133-1135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we developed a wafer-cleaning procedure for ultrathin dielectric growth. This involves a modified RCA clean, a dilute-HF dip and a subsequent immersion in methanol/HF solution. Ultrathin (≈42 A(ring)) oxynitride films were grown in pure N2O using this new cleaning procedure and some other schemes to investigate the effects of surface preparation on dielectric integrity. Devices fabricated by this new cleaning procedure were found to exhibit the lowest leakage current level and the best breakdown performance among all samples. The variation in the current-voltage characteristics across a 4-in. wafer was also minimized by this two-step dipping process. The results suggest that the new cleaning procedure is desirable to yield high-quality ultrathin dielectrics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112120
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  • 3
    Electronic Resource
    Electronic Resource
    "Turn-around'' effects of stress-induced leakage current of ultrathin N2O-annealed oxides (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 673-675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of the thickness dependence on stress-induced leakage current (SILC) have been performed in the thickness range of 41 to 87 A(ring) for N2O-annealed and O2-grown oxides. N2O-annealed oxide shows significantly reduced SILC leakage currents. Furthermore, SILC currents were found to increase with decreasing oxide thickness, as reported earlier. However, a "turn-around'' effect at ∼50 A(ring) has been observed in these films. SILC currents begin to decrease when oxide thickness is scaled below 50 A(ring). This turn-around effect can be explained using the trap-assisted tunneling model. For thicknesses equal or less than 41 A(ring), defect-related current and direct tunneling current become dominant over SILC current. Our results indicated that for N2O-based oxides in the ultrathin thickness regime, stress-induced leakage currents become less significant. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115199
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  • 4
    Electronic Resource
    Electronic Resource
    Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3407-3409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress-induced leakage current (SILC) in ultrathin oxide metal–oxide–semiconductor devices has been quantitatively modeled by the trap-assisted tunneling mechanism. These results are compared with experimental data on samples with oxide thickness ranging from 40 to 80 Å. This model accurately describes the electric-field dependence of SILC, and also predicts the increase, then decrease in SILC, with decreasing oxide thickness, which is observed experimentally. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119186
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