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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6774-6781 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates thermal stress-induced voiding, and void nucleation in particular, in narrow, passivated aluminum-based metallizations on silicon substrates. After excursions to a higher temperature, the thermal stress is tensile, and increases during cooldown to room temperature, after which it relaxes with time. Experiments conducted on two aluminum alloy metallizations suggest that stress-induced void nucleation is a one shot phenomenon during cooldown from the heat treatment temperature. Further, the high thermal stresses present, and the strong constraints against deformation provided by the substrate and passivation layer, make void nucleation unique in narrow passivated metallizations. Finally, voids always appear to be connected to grain boundaries. The above experimental evidence and theoretical considerations together suggest that grain boundary sliding is the main mechanism facilitating void nucleation in passivated aluminum alloy metallizations.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1748-1755 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present study, the Eshelby theory of inclusions is applied to model the stresses arising after heat treatment at 400 °C in aluminum line metallizations, embedded in silicon/passivation matrix. The stresses obtained are about 200 MPa higher than the ones previously reported. Moreover, the stresses in the axial and width directions of the lines are shown to be on the same order, while the normal stress is smaller, especially in the lines of low thickness-to-width ratio. A modification of the familiar sin2 ψ method of x-ray stress measurement is presented to deal more accurately with the [111]-fiber texture present in the aluminum lines studied. The lateral and normal stresses in the aluminum metallizations after a heat treatment at 400 °C are measured in room temperature by x-ray diffraction from 4 h after the heat treatment at 400 °C up to 3 months. The experimental results are well in accord with predictions obtained from the Eshelby model. Particularly, the lateral stresses are found to be about equal, while the initial normal stress is smaller, but eventually becomes the largest stress component. Dislocation mechanisms to rationalize the present observations are discussed: at longer times, diffusion-controlled dislocation climb and void growth connected to it appear to be the most important mechanisms to relieve the stress, while during cooling dislocation glide is also significant.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3790-3799 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8083-8091 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stress-induced voiding in narrow aluminum-based metallizations used as interconnects in microelectronic circuits has recently become a serious reliability concern. Room-temperature stress relaxation and associated physical phenomena in passivated and unpassivated aluminum-based metallizations, subsequent to exposure to high temperatures, are analyzed based both on theoretically estimated and experimentally determined thermal stresses. It is shown that stress relaxation at longer times involves mainly dislocation climb, while short-term relaxation during cool down from higher temperatures, and immediately thereafter, involves significant dislocation glide. Void growth, frequently observed in passivated metallizations, provides a new source of atoms to feed stress relaxation by the same processes as in the absence of voiding.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4995-5004 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Probability distributions are evaluated for electromigration induced open failures in narrow, passivated interconnects with a near-bamboo grain structure. Void formation is initiated at the cathode ends of the polycrystalline line segments or "grain clusters.'' If these clusters are longer than a critical size Lc, they can accommodate enough atoms for voids to reach the critical size to fail the line. Obviously, the critical size Lc depends on the thermal stress: a cluster under a tensile stress is able to incorporate more atoms from the void than an unstressed cluster. In the case the clusters are shorter than Lc, atoms from the voids must be distributed also to bamboo sections, outside the clusters, in order for the voids to induce open failures. Based on this physical picture, failure probabilities are evaluated as a function of time. The predicted failure distributions and parametric dependencies compare well with the experiments.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2350-2352 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance saturation as a function of current density and stripe length has been investigated for a two-level structure with Ti/TiN/AlCu/Ti/TiN stripes and interlevel W stud vias. A simple model relating the resistance change at saturation to the current density and stripe length is formulated for structures with short stripe lengths and blocking boundaries at both ends. Experimental results for stripe lengths of 25, 50, or 100 μm are in good agreement with the model predictions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 439-441 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In narrow metal interconnects used in advanced integrated circuits, electromigration flux divergences occur at the intersection between polycrystalline cluster segments (where grain boundaries offer a fast diffusion path), and bamboo segments (where there are no grain boundaries along the line length). In confined, passivated metal interconnects, these flux divergences are linked to the evolution of significant mechanical stresses in the metal. A quasisteady state stress distribution builds up quickly in the cluster segments and remains unchanged until the stress profiles between cluster segments begin to overlap, and the clusters begin to "interact.'' A significant increase in stress above the quasisteady state can result from cluster interactions, increasing the potential for electromigration and stress-induced damage. If the cluster separation is small, this stress increase can occur on a time scale which is short compared to the stress evolution of the interconnect line as a whole. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 411-413 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new dynamic picture of electromigration-induced failure in passivated narrow lines allows the prediction of the variation of lifetimes with temperature and current density. According to the model, damage is usually nucleated by thermal stress-induced voiding. Small voids are trapped and grow at grain and phase boundaries. After reaching a critical size, voids then begin to migrate and coalesce, eventually leading to line severance. In most cases this leads to lifetimes varying approximately as the square of the current density j for low and moderate j, and faster for large j. The temperature dependence is determined by a combination of bulk, surface, and grain boundary diffusivities.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Molecular and Cellular Endocrinology 35 (1984), S. 55-63 
    ISSN: 0303-7207
    Keywords: adenylate cyclase ; gonadotropin receptors ; prolactin receptors
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    European journal of pediatrics 110 (1971), S. 267-275 
    ISSN: 1432-1076
    Keywords: Fatty Degeneration of Liver ; Familial Liver Disease
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Es wird von einer Familie berichtet, in der das erste normal entwickelte Kind im Alter von 19 Monaten an einer Krankheit starb, die einer untypischen, rezidivierenden Hepatitis ähnlich sah. Das zweite Kind in der Familie hatte Symptome von cerebraler Schädigung, im Alter von 2 Tagen und später bekam es auch Apnoeanfälle. Es starb im Alter von 56 Std. Bei der Obduktion zeigten die mikroskopischen Bilder von der Leber intensive Fettdegeneration sonderbarer Art, und das Epithel der Nierentubuli war auch vacuolisiert. Es scheint, daß diese Kinder an einer neuen Störung im Fettstoffwechsel, einer fatalen, familiären, hepatischen Steatosis gelitten haben.
    Notes: Abstract A family is described in which the first child, who had developed normally, died at the age of 19 months of a disease resembling atypical recidivous hepatitis. The second child of the family showed symptoms of cerebral irritation at the age of 2 days, and later had apneas. He died at the age of 56 hrs. In the autopsy the microscopic findings of the liver revealed intensive fatty degeneration of a peculiar kind, and the epithelium of renal tubules was also vacuolized. It seems apparent that these infants suffered from a new disorder of fat metabolism, fatal familial hepatic steatosis, which is so far known only inadequately.
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