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  • 1
    Electronic Resource
    Electronic Resource
    Metastable defects in 6H–SiC: experiments and modeling (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1324-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using various junction space-charge techniques, annealing, and simulation, a metastable defect in 6H SiC have been characterized. We suggest a configuration coordinate diagram with three configurations, where two of them can only exist when the defect is occupied by one or more electrons. The thermal ionization energies for the different configurations were measured and the thermal barriers for two of the transitions have been determined. It is also shown that the transformation process is governed by electron capturing to the defect. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427401
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  • 2
    Electronic Resource
    Electronic Resource
    Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3504-3508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectroscopy is used for determination of the nitrogen doping concentration in noncompensated 4H– and 6H–SiC by comparing the intensity of nitrogen-bound exciton (BE) lines to that of the free exciton (FE), the latter being used as an internal reference. The results are compared with a previous work performed for the case of 6H–SiC only. A line-fitting procedure with the proper line shapes is used to determine the contribution of the BE and FE lines in the PL spectrum. The ratio of the BE zero-phonon lines (R0 and S0 in 6H, Q0 in 4H) to the FE most intensive phonon replica around 77 meV exhibits very well a direct proportional dependence on the doping as determined by capacitance–voltage (C–V) measurements for both polytypes. The use of fitting procedure which takes into account the real line shapes, the influence of the spectrometer transfer function, and the structure of the PL spectrum in the vicinity of the FE replica allows us determination of the N-doping concentration by PL for doping levels in the region 1014 cm−3–3×1016 cm−3 for 4H– and 1014 cm−3–1017 cm−3 for 6H–SiC. Above these levels the free-exciton related emission is not observable. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363221
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5704-5712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon to carbon precursor ratio is demonstrated as strongly affecting the spontaneous nucleation of cubic SiC upon the growth of epitaxial layers of 4H and 6H silicon carbide using the chemical vapor deposition (CVD) technique. High C/Si ratios appear to promote the nucleation of cubic SiC. A model of CVD process chemistry that relates the effect to a decrease of SiC surface mobility with an increase of the C/Si ratio is proposed. The resulting increase of supersaturation at the surface terraces promotes the spontaneous nucleation of cubic SiC. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363622
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of microwave fields on recombination processes in 4H and 6H SiC (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1929-1932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of microwave fields on recombination processes, which are responsible for the optical detection of cyclotron resonance (ODCR) in 4H and 6H SiC epitaxial layers, have been investigated. We present experimental evidence indicating that the dominant mechanism of ODCR in SiC, at low temperatures and in a common range of microwave power (〈200 mW), is microwave-induced lattice heating under the cyclotron resonance conditions. The results also show that at low temperatures and low microwave power the dominant scattering mechanism is impurity scattering, while carrier scattering by lattice phonons dominates under high microwave power conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364048
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  • 5
    Electronic Resource
    Electronic Resource
    Dominant recombination center in electron-irradiated 3C SiC (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3784-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level defects and their role in carrier recombination processes in electron-irradiated 3C SiC have been studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR). An isotropic ODMR spectrum, with a g value of 2.0061±0.0002 and an effective electron spin S=1/2, is observed in irradiated 3C SiC films. From the spectral dependence studies of the ODMR signal, the defect is shown to be a deep level center related to a radiation-induced PL band with a zero-phonon line at 1.121 eV. Due to the competition between different carrier recombination channels, this ODMR spectrum can also be observed as a decrease of any other PL emissions from the sample, indicating its dominant role in recombination processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361214
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  • 6
    Electronic Resource
    Electronic Resource
    The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 679-681 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The minority carrier lifetime has been measured on n-type 6H- and 4H-SiC epitaxial layers. We observe inherently longer lifetimes in 4H layers compared to 6H-SiC layers. A value as high as 2.1 μs has been measured at room temperature in 4H-SiC, however, large variations may be observed over the surface. The lifetime increases with temperature and at a typical operating temperature of a device the lifetime is close to 5 μs. The lifetime appears to be correlated with the morphology of the epitaxial film showing that the lifetime limiting defect may be related to a crystalline imperfection. A strong correlation can also be seen with the thickness of the epitaxial layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117804
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  • 7
    Electronic Resource
    Electronic Resource
    High temperature chemical vapor deposition of SiC (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1456-1458 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A growth process has been investigated for the epitaxial growth of silicon carbide. The technique can simply be described as chemical vapor deposition (CVD) at high temperatures, hence the name high temperature CVD (HTCVD). The growth process however, differs greatly from that of the CVD process due to the significant sublimation and etch rates at the extreme growth temperatures (1800–2300°C). The grown rates obtained with the HTCVD are in the order of several tens of μm/h to 0.5 mm/h. The purity and crystallinity of the growth layers are outstanding showing strong free exciton related photoluminescence. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117613
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  • 8
    Electronic Resource
    Electronic Resource
    Capture cross sections of electron irradiation induced defects in 6H–SiC (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 704-708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of electron irradiation induced deep levels in 6H–SiC p+n diodes grown by chemical vapor deposition has been performed. Deep level transient spectroscopy (DLTS) reveals several overlapping peaks in the temperature range 140–650 K. The electron capture cross sections have been measured by directly observing the variation of the DLTS peak height with the duration of the filling pulse and fitting the capacitance transient using multiple linear regression. Temperature dependence studies of the electron capture cross section were performed on three of the observed levels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368125
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  • 9
    Electronic Resource
    Electronic Resource
    Possible lifetime-limiting defect in 6H SiC (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2687-2689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We reveal and investigate a possible lifetime-limiting defect in as-grown 6H SiC by optical detection of magnetic resonance (ODMR). This defect is shown to be a deep level center (with an energy level at about Ec−1.1 eV), evident from the related deep photoluminescence emission and a photo-excitation spectrum of the ODMR signal. The fact that this defect has been observed in both bulk crystals and epilayers, regardless of their doping type, indicates that this must be a common and basic defect in 6H SiC. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112962
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  • 10
    Electronic Resource
    Electronic Resource
    Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 189-191 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature minority carrier lifetimes have been measured on 6H SiC epitaxial layers with residual n-type doping ranging from below 1014 cm−3 to above 1017 cm−3. Lifetimes as high as 0.45 μs have been achieved for thick low-doped material. The samples were grown by chemical vapor deposition using silane and propane or silane and methane in a hydrogen ambient. The minority carrier lifetimes were measured by monitoring the decay of the near-band gap room-temperature luminescence of the samples after excitation of a short laser pulse. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113130
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