ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The in situ Hall effect measurements at room temperature showed that formation of the atomically clean Si(111) 7×7 surface as a result of high-temperature annealing (T=1250°C, t=120–180 s) of n-Si reverses the majority carrier sign at the surface, and a hole-enriched layer is formed at the p-Si surface. The different dynamics of Hall and resistivity voltage variations within the first monolayer of iron adsorbed onto substrates with a p-n junction or with a hole-enriched layer is not related to conduction over the adsorbed layer. Conduction in the Fe layer of thickness exceeding three monolayers is caused in both cases by the transport of electrons with densities 2×1013–2×1014 cm−2 and mobilities 65–90 cm2/(V s).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188076
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