Keywords:
Electronic books.
Description / Table of Contents:
GADEST 1997Proceedings of the 7th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '97), Spa, Belgium, October 1997.
Type of Medium:
Online Resource
Pages:
1 online resource (530 pages)
Edition:
1st ed.
ISBN:
9783035706710
Series Statement:
Solid State Phenomena Series ; v.Volumes 57-58
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=6319424
Language:
English
Note:
Intro -- Gettering and Defect Engineering in Semiconductor Technology VII -- Preface -- Table of Contents -- Design: New Material Challenge for Silicon ULSI -- Silicon Wafer Technology: The Challenges towards the Gigabit Era -- Hydrogen Annealed Silicon Wafer -- Formation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon Crystal -- CZ Crystal Growth Development in Super Silicon Crystal Project -- Gettering by Voids in Silicon: A Comparison with other Techniques -- Gettering in Advanced Low Temperature Processes -- Metal Gettering by Defective Regions in Carbon-Implanted Silicon -- Metallic Impurity Gettering in MeV Implanted Si -- Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon -- A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers -- Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon -- Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis -- Interaction of Impurities and Dislocations in Silicon before and after External Gettering -- The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers -- Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers -- Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si -- Vacancy-Assisted Oxygen Precipitation Phenomena in Si -- Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers -- State of Oxygen and Growth Conditions -- Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV) -- Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements.
,
Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection -- Initial Stage of Oxygen Precipitation in Silicon -- Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon -- Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres -- Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium -- Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation -- Erbium in Silicon: Problems and Challenges -- Thermal Donors in Silicon Doped with Erbium -- Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons -- Defect Engineering Radiation Tolerant Silicon Detectors -- Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors -- Lattice Defects in Si1-xGex Devices by Proton Irradiation and their Effect on Device Performance -- An IR Study of the Annealing Behaviour of A-Center in Silicon -- Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes -- Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er -- Alpha-Particle Irradiation Induced Defects in Metal-Oxide-Semiconductor Silicon Transistor -- The Change of Au-ZnS and Au-CdS Diode Structure Parameters Caused by Low-Dose X-Ray Irradiation -- Critical Resolved Shear Stress for a Dislocation Loop Growth, Stability and Retrogrowth in Silicon: Application to the 16 MEG DRAM -- Modification of the Recombination Activity of Dislocations in Silicon by Hydrogenation, Phosphorous Diffusion and Heat Treatments -- Influence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi2-Precipitates in Silicon.
,
The Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in Si -- Influence of the Surface Metal Spraying on the Dislocation Detachment Process in Silicon Crystals -- The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations -- Deformation Interaction of Defects in Crystal: Concept of Evaluation -- Yield Analysis of CMOS Ics -- The Role of Grown-in Defects in Advanced Silicon Technology -- Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models -- Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen -- Strain and Gettering in Epitaxial Silicon Wafers -- Strain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements -- Defects Produced in Silicon by Reactive Ion Etching -- Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon -- Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si -- Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers -- Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon -- Planar Solidification of Multicrystalline Silicon for Phtovoltaic Applications -- Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing -- Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals -- On the Defect Structures in Te-Doped GaAs -- Study of Surface Conduction Related Effects in GaAs MESFET's -- Nitridation Effects in n-CdTe -- Formation of Grown-in Defects in CZ-Si Crystals -- X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon.
,
Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution -- Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (Modified Fisher Model) -- Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes -- An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry -- Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si -- Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures -- Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films -- Raman and HREM Observation of Oriented Silicon Nanocrystals Inside Amorphous Silicon Films on Glass Substrates -- A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries -- New Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA) -- Analytical Modeling of the Gold Diffusion Induced Modification of the Forward Current through P-N Silicon Junctions -- Keyword Index -- Author Index.
Permalink