Note: Intro -- Gettering and Defect Engineering in Semiconductor Technology -- Table of Contents -- Defect Engineering in VLSI-Technologies -- Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films -- Advances in the Understanding of Oxygen and Carbon in Silicon -- Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon -- Effect of Volume Defects on Gold Gettering in CZ-SI -- Investigations of the Behaviour of Transition Metals in Silicon -- Defect Engineering for Bicmos-Technology -- Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence -- Implantation Induced Defect Modification in P Doped Bipolar Structures -- The Properties of the Defects in Heavy Implanted Silicon -- Defect Formation and Lateral Oxidation during Locos Processing -- Defects and Their Influence on Parasitic Devices in Integrated Circuits -- Volume Defect Formation in CZ SI Wafers and Related Electrical Effects -- Buried Layer Processing for Advanced Bipolar Technology -- Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography -- Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors -- On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process -- Creation of Deep Denuded Zones in CZ Silicon Wafers -- Defect Engineering for ULSI Epitaxial Silicon -- Computer-Simulation of Gold-Redistribution in Silicon -- An Attempt to Simulate Oxygen Precipitation in Silicon -- Defect Formation in Dislocation-Free Silicon Containing Oxygen -- Influence of Preannealing on Oxygen Precipitation -- Silicon Intrinsic Gettering Durability and Effectiveness -- Effect of Heat Treatment on Defect Formation in Silicon. , Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon -- Defect Reactions in Semiconductors -- Electronic States in Plastically Deformed Silicon -- Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions -- Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope -- Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon -- Impurity Gettering in Semicrystalline Silicon Solar Cells -- Formation and Defect Structure of Fe-B-Fe Complexes in Silicon -- Electrical Activity and Impurity Precipitation in Silicon Grain Boundaries -- Photo-Thermal Ionization Spectroscopy of Point Defects in Semiconductors -- Kink-Point Defect Interaction and Mobility of Dislocations in Semiconductors -- I. Conductivity Along Dislocations: Temperature Dependence and Nonlinear Effects II. Combined Resonance and Structure Peculiarities of Plastically Deformed Silicon -- Recrystallization and Defect Formation in Ion-Implanted Silicon Studied by Transmission Electron Microscopy -- Auger Recombination in Heavily-Doped p+ Silicon -- Photo-Capacitive Spectroscopy of Sulphur Atoms and Heat Treatment Defects in n-Si -- EPR Detection of Complex Platinum-Related Defects in Silicon -- Defect Kinetics and Impurity Diffusion During Hot Implants Into Silicon -- The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen -- Dislocation Motion in Compound Semiconductors -- Dislocation Structures after Microdeformation of CaAs Single Crystals -- The Effect on the Schottky Barrier Height of Diffusion of Pt into Si From PtSi -- Electron Pulse Irradiation of Semiconductor Devices. , Charge Collection Microscopy in Gettering and Defect Engineering -- Lifetime in Silicon -- Scanning Infra-Red Microscope Investigation of Oxide Particles in Czochralski Silicon Heat-Treated for Intrinsic Gettering -- Laser Scanning Tomography: A Study of the Defect Cluster Nucleation and Growth in Silicon -- The Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor Crystals -- The Capacitance Microscope: A Non-Contacting Stylus Technique for the Investigation of Semicionductor Surfaces -- Synchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals -- Positron Sudies of Thermal-Induced Defects in Silicon -- DLTS Investigations of the Carbon-Related Centers in Si -- The Noise Spectroscopy of Defects and Impurities in Compensated Silicon -- Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method -- Silicon Plates Homogeneity Diagnostics Method by Means of Semiconductor-Electrolyte Structure Surface Photovoltage Measurement -- Electrically Active Near-Surface Implantation Defects in Silicon and GaAs -- Trap-Spectroscopy in Insulating Layers -- Insulator Investigations in MIS Structures with Constant-Capacitance-DLTS Technique -- A Theoretical Model of the Surface Avalanche Method -- Application of High Tc Superconducting Thin Films in Microelectronics-Possibilities and Illusions -- Semiconductor Dynamic Memories -- Effect of Vibration Frequency and Sample Composition on Acoustic Properties of Y-Ba-Cu-O High-TC Superconductors -- SOI-Films by Zone Melting Recrystallization of Polycrystalline Silicon -- Heterogeneous Ion Synthesis of Isolating Layers in Si -- Spectroscopic Ellipsometry Studies of Silicon on Insulator Structures -- Silicon-on-Insulator Technology by Si-MBE. , Defect Microchemistry at the Si/SiO2 Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study -- Interfacial Defects Study of the Gallium Arsenide on Silicon Heterostructure -- Some Aspects of Interface and Surface Eingineering of AIII-BV-Compound-Semiconductors -- SOI by Silicon Dioxide Thermal Bonding -- Defect Engineering in SOI-Structures Formed by High Dose Implantation of Reactive Ions -- Strain and Critical Thickness of MBE Grown CaF2-Insulators on Si(111) -- Defect Control in Thick SOI-Films Produced by Zone Melting Recrystallization -- Defects and Their Influence on Parasitic Devices in Integrated Circuits -- Formation and Structure of Iron-Impurity Complexes in Silicon -- Defect Formation in Dislocation-Free Silicon Containing Oxygen -- Author Index.