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  • 1
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    A lectin-based diagnostic system using circulating antibodies to detect cervical intraepithelial neoplasia and cervical cancer (2015)
    Oxford University Press
    Details
    Publication Date: 2015-12-09
    Description: In the present study, we developed serological strategies using immunoglobulin fractions obtained by protein A chromatography to screen for cervical cancer and cervical intraepithelial neoplasia I (CIN I). The reactivities of the immunoglobulins purified from sera of women with normal cytology, CIN I and cervical cancer were compared in enzyme-linked immunosorbent assays (ELISA) and enzyme-linked lectin assays (ELLAs). To capture the immunoglobulins, ELISAs and ELLAs were performed in protein A immobilized microplates. The reactivity of immunoglobulin in ELISA was in the increasing order normal cytology, CIN I and cervical cancer, while that in ELLAs for detecting fucosylation was in the decreasing order normal cytology, CIN I and cervical cancer. It was confirmed that women with CIN I were distinguishable from women with normal cytology or women with cervical cancer in the ELISA or the ELLA for detecting fucosylation with considerable sensitivity and specificity. Women with cervical cancer were also distinguishable from women with normal cytology with high sensitivity (ELISA: 97%, ELLA: 87%) and specificity (ELISA: 69%, ELLA: 72%). Moreover, the logistic regression model of the ELISA and the ELLA discriminated cervical cancer from normal cytology with 93% sensitivity and 93% specificity. These results indicate that the ELISAs and the ELLAs have great potential as strategies for primary screening of cervical cancer and CIN. It is expected that the ELISA and the ELLA can provide new insights to understand systemic changes of serum immunoglobulins during cervical cancer progression.
    Print ISSN: 0959-6658
    Electronic ISSN: 1460-2423
    Topics: Biology , Medicine
    Published by Oxford University Press
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of melt temperature on the magnetic properties of FeCuNbSiB alloy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 865-870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of an Fe73.5Cu1Nb3Si13.5B9 alloy with nanoscale crystalline structure have been investigated as a function of the melt temperature. In the temperature range of 1240 to 1380 °C investigated in the present study, the permeability increases with the melt temperature. This result may be explained in terms of the reduction in the magnetic anisotropy as a function of the melt temperature. This is supported by the results for the remanence ratio, which also increases with melt temperature in a similar manner to the permeability. In the latter part of the work described in this paper, the relationships between the permeability and the coercivity, and the permeability and the remanence ratio have been investigated for the nanocrystalline alloy. It was found that the permeability is correlated more closely to the remanence ratio than the coercivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353298
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of Al on the magnetic properties of nanocrystalline Fe73.5Cu1Nb3Si13.5B9 alloys : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6591-6593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Al on the soft magnetic properties of nanocrystalline Fe73.5−xAlxCu1Nb3Si13.5B9 alloy ribbons are investigated in the composition range of 0≤x≤1.0. The relative initial permeability at 1 kHz is found to increase by the addition of Al, and reaches the peak value at x=0.1. The coercivity decreases, rather significantly, with the Al content in the whole composition range investigated in the present work, the values of the coercivity being 12.5 mOe at x=0 and 9.3 mOe at x=1.0. The magnetic induction at an applied field of 10 Oe, however, decreases moderately by the introduction of Al, possibly due to the dilution effect. The improvement in the soft magnetic properties is considered to result from the reduction in the grain size of the α Fe-Si solid solution phase of the Al-added alloy ribbons, which has been observed by transmission electron microscopy. Another factor may be due to the decrease in the intrinsic magnetocrystalline anisotropy K1 as Al is added to the alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352574
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties of Fe73.5Cu1Nb3(SixB1−x)22.5 (x=0.5–0.8) alloys with ultrafine grain structures : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5921-5923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalloid effect on magnetic properties and microstructures of iron-based alloys with ultrafine grain structures was investigated. For Fe73.5Cu1Nb3(SixB1−x)22.5 (0.5≤x≤0.8) alloys with 10–15-nm grain diameters, the permeability increased with Si content. The alloys with x=0.5 and 0.6 subjected to the optimum heat treatment had two different ferromagnetic phases which were composed of an α-Fe(Si) solid solution with high Curie temperature and an interfacial phase with low Curie temperature. However, in high Si alloys with x=0.7 and 0.8, only a phase with high Curie temperature appeared. This result suggests that in the high Si composition range, a complete transformation from the amorphous phase to the α-Fe(Si) single phase was achieved. The disappearance of the interfacial phase which would certainly disturb the exchange coupling between the α-Fe(Si) phase grains would be considered to be one of the factors for the increased permeability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347816
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and crystallization of low-pressure chemical vapor deposited silicon films using Si2H6 gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5427-5432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructures of silicon films deposited on SiO2 substrates by low-pressure chemical vapor deposition using Si2H6 gas were investigated and compared to those using conventional SiH4 gas by transmission electron microscopy and x-ray diffraction. The deposition rate of the Si2H6 process was about ten times higher than that of SiH4 process at low temperatures (〈550 °C). The transition deposition temperature from amorphous to polycrystalline film was found to be around 580 °C, which was similar to that of the SiH4 process. The film deposited at 600 °C was partially crystalline and had equi-axed grains with the largest average grain size of 0.3 μm while the films using SiH4 has needle-like columnar grains with smaller sizes (200 A(ring)). The x-ray diffraction analysis showed that the structural disorder to amorphously deposited Si films increases as deposition temperature decreases. The grain size in the film after crystallization at 600 °C strongly depended on the deposition temperature and the deposition rate, producing a larger grain size at a lower deposition temperature and/or at a higher deposition rate (Si2H6 deposition compared to SiH4 deposition). The apparent increase in grain size can be explained as a result of the lowered number of crystal nuclei due to a decrease in the number of pre-existing microcrystallites serving as heterogeneous nucleation seeds. When the deposition rate was lower than the critical value (approximately 2–4 nm/min), the grain size in the crystallized film decreased for both SiH4 and Si2H6 films. The maximum grain sizes were 4.5 and 0.3 μm at the deposition temperatures of 485 and 550 °C for the films using Si2H6 and SiH4 gases, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350565
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  • 6
    Electronic Resource
    Electronic Resource
    Thermally stable ohmic contacts to n-type GaAs. VIII. Sputter-deposited InAs contacts (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2475-2481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties and microstructure of InAs ohmic contacts to n-type GaAs, prepared by sputter-depositing a single target, were studied by measuring the contact resistance (Rc) by the transmission line method and analyzing the interfacial structure by x-ray diffraction and cross-sectional transmission electron microscopy. Current-voltage measurement of an as-deposited InAs/W contact showed Schottky behavior, where the W layer was used as a cap layer. The InAs layer had an amorphous structure and a uniform oxide layer was observed at the InAs/GaAs interface. Even after annealing at 800 °C, ohmic behavior was not obtained in this contact because the intervening oxide layer prevented the InAs and GaAs interaction. By adding Ni to the InAs/W contacts (where Ni was deposited by an evaporation method), the interaction between the InAs and the GaAs was enhanced. Nickel interacted with As in the InAs layer and formed NiAs phases after annealing at temperature above 600 °C. The excess In in the InAs layer reacted with the GaAs substrate, forming InxGa1−xAs phases which covered about 80% of the GaAs interface. The Rc values of ∼0.4 Ω mm were obtained for InAs/Ni/W and Ni/InAs/Ni/W contacts at annealing temperatures in the range of 750–850 °C. These contacts contained only high melting point compounds and the contacts were stable during annealing at 400 °C for more than 100 h after ohmic contact formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346509
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  • 7
    Electronic Resource
    Electronic Resource
    Thermally stable ohmic contacts to n-type GaAs. VI. InW contact metal (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4183-4189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties and thermal stability of In/W Ohmic contacts in n-type GaAs were studied by analyzing interfacial microstructure using cross-sectional transmission electron microscopy and measuring the contact resistances by transmission line method. Indium layers with various thicknesses were deposited directly on GaAs substrates, which were kept at room or liquid-nitrogen temperature. The lower contact resistances (Rc) were obtained when the contacts were prepared at liquid-nitrogen temperature. These low Rc values were due to formation of large-areal InxGa1−xAs phases on the GaAs substrate after annealing at temperatures higher than 600 °C. The In layer thicknesses of the In/W contacts prepared at liquid-nitrogen temperature strongly affected the contact resistances as well as the thermal stability after contact formation. The optimum In layer thickness which provided the best electrical properties and thermal stability was determined to be 3 nm. The In(3 nm)/W contacts yielded Rc values less than 0.2 Ω mm and the Rc values did not deteriorate after annealing at 400 °C for more than 20 h. The contacts with In layer thicknesses thinner than 3 nm resulted in higher Rc values due to insufficient InxGa1−xAs phases at the metal/GaAs interfaces. The contacts with In layer thicknesses thicker than 3 nm resulted in poor thermal stability due to formation of large amounts of In-rich In(Ga,As) phases with low melting points. The present In(3 nm)/W Ohmic contacts are believed to be the simplest metallurgy with excellent electrical properties and thermal stability among In-based Ohmic contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344955
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  • 8
    Electronic Resource
    Electronic Resource
    Surface passivation by sulfur treatment of undoped p-CdTe(100) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2013-2015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface passivation of undoped p-CdTe(100) by (NH4)2Sx treatment was investigated by using photoluminescence (PL), photoconductivity (PC), and x-ray photoelectron spectroscopy (XPS). After sulfur treatment for 2 min, the acceptor bound exciton (A0, X) peak increases greatly in the PL spectrum, and the minority-carrier lifetime of CdTe becomes the longest value in the PC measurement. The XPS spectrum for untreated CdTe shows the additional peaks on the right side of two main Te peaks corresponding to the Te 3d core levels, and these additional peaks are related to TeO3 with binding energies of 576.2 and 586.5 eV. After sulfur treatment, while the intensities of the Te 3d core levels decreased gradually, those of the TeO3 peaks disappear. In addition, the S 2p core-level spectra for sulfur-treated CdTe show the peaks at the 161.7 and 162.8 eV, which are attributed to a CdS formation at the surface of CdTe. These results indicate the sulfur effectively dissociates the native oxides from and neutralizes the dangling bonds at the surface of CdTe. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305551
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  • 9
    Electronic Resource
    Electronic Resource
    Formation of induced anisotropy in amorphous Sm–Fe based thin films by field sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5801-5803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Induced anisotropy with a large energy of 6×104 J/m3 is formed in an amorphous Sm–Fe based thin film by sputtering under an applied magnetic field of 500–600 Oe. The induced anisotropy results in a large anisotropy in magnetostriction, a strain anisotropy ratio reaching as high as 35, although intrinsic magnetostriction is affected only slightly. The large strain anisotropy allows one to realize a large strain in a particular direction and, hence, it is of significant practical importance. Induced anisotropy is also found to be formed by postannealing under applied magnetic field, but the magnitude of anisotropy energy formed is very small. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372527
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  • 10
    Electronic Resource
    Electronic Resource
    Enhanced in-plane anisotropy of Tb–Fe thin films by Sm addition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6244-6246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of Sm on the magnetic and magnetostrictive properties of Tb–Fe thin films are investigated. Four alloy systems, RxFe100−x (R=Tb+Sm) with x=39.8, 41.9, 43.7, and 45.8, are examined with Sm content varied from 0 (Sm free) to 2.2 at. %. In-plane anisotropy is found to be enhanced by the addition of Sm and the strongest in-plane anisotropy occurs in the Sm content range of 1 to 2 at. % depending on R content. At low magnetic fields of 1000 Oe and below, magnetostriction increases significantly with increasing Sm content, and reaches a maximum at an intermediate Sm content where well-developed in-plane anisotropy is observed. At higher magnetic fields of 3000–5000 Oe, however, no substantial improvement of magnetostriction occurs with the addition of Sm. The Sm content dependences of magnetization and coercive force are also examined. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370234
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