GLORIA

GEOMAR Library Ocean Research Information Access

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4156-4160 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The native oxide, thermally oxidized and hydrofluoric acid rinsed surfaces of Si(100) have been characterized by photon stimulated ion desorption (PSD), and both photoelectron and Auger electron spectroscopies. The only species detected by PSD were H+ ions with different kinetic energies. Low kinetic energy H+ ions were detected only from the HF rinsed surfaces presumably arising from scission of Si—H bonds while higher kinetic energy ions attributed to adsorbed hydrocarbon dissociation were observed for all of the surfaces.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have extended the stable amorphous phase of the Co1−xZrx system to 7〈x〈52 by compositionally modulating very thin (five to ten atomic layers) layers of Co and Zr by rf diode sequential sputtering from the elemental targets onto rotating, water cooled substrates. This extension was attributed to a stable, two-phase, hetero-amorphous state similar to that previously reported for Co/B layered structures (Ref. 1). The measured compositional variation of Ms of our Co/Zr layered structures indicated that, as expected, the composition of the stable Co-rich clusters in the heterogeneous state lies near the stable Co-rich eutectic of the CoZr system. The composition variation of the coercivity of the as-deposited Co/Zr structures was remarkably low (〈1 Oe) over the entire composition range. The uniaxial anisotropies of 15–30 Oe were reduced to ≈2 Oe by a combination of bias sputtering and rotating field annealing. Although they have reduced Ms, the permeabilities of the Zr-rich films are (approximately-greater-than)1200, and constant (to 10%) to ≈50 MHz. They also have high resistivities (≈190 μΩ cm), potentially increased hardness and stability, and could be useful for magnetic recording head applications.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4268-4270 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs films grown on untilted Si substrates and prepared by molecular-beam epitaxy were characterized by low-temperature photoluminescence (PL) spectroscopy. The GaAs layer was irradiated in situ with a 50 keV electron beam during growth. The PL spectrum of the electron-beam-irradiated GaAs/Si consisted of four well-resolved peaks at 1.502, 1.488, 1.471, and 1.434 eV. The peaks at 1.502 and 1.488 eV are related to the intrinsic emissions, and the peaks at 1.471 and 1.434 eV originate from the extrinsic emission band. The full width at half-maximum of the 1.488 eV emission band is only 2.8 meV, which is much smaller than the value obtained from the unirradiated GaAs/Si. The strain induced in the GaAs layer was estimated from the intrinsic peaks observed in the temperature range of 5–200 K. The PL properties of the species after postgrowth treatment, such as rapid thermal annealing are discussed.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 9200-9202 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An experimental method is described that is directed at monitoring the creation and decay of core hole states in molecules from state-to-state. Data in the form of a coincidence map are presented and analyzed for the case of nitrous oxide.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5915-5918 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Tunable and polarized soft x-ray radiation was used to excite core electrons of H2O. Angle-resolved proton yields were measured by retarding potential analyzers at 0° and 90° with respect to the polarization vector of the radiation. The ability of angle-resolved detection to reveal hidden resonances in rich molecular spectra is demonstrated, and the anisotropy parameter obtained from the two ion yields identifies the symmetries and the relative oscillator strengths of the core-hole excited states in the near-edge region of the spectrum. The analysis of the data substantiates the validity of the axial recoil approximation and provides evidence for ultrafast dissociation. Comparisons with the results of theoretical calculations are made.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7936-7945 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The symmetry of excited states reached by photoexcitation of K-shell electrons of N2 and O2 is identified from the fragmentation anisotropy. For each molecule, ion yield excitation spectra were obtained at 90°, 54.7°, and 0° relative to the axis of soft x-ray polarization. The degree of polarization of the synchrotron radiation was determined experimentally. From this determination and the angular dependence of the ion yield, the photoabsorption anisotropy parameter β is obtained as a function of photon energy. Variations in the β spectra are discussed in terms of previously assigned spectral features and are compared with other experimental results. A comparison also is made with theoretical calculations, which are available for the case of N2.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3490-3494 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the optimized planar Hall resistance (PHR) obtained by using biaxial currents in a NiO (30 nm)/NiFe (30 nm) bilayers. The measured PHR, Rxy, had a drift resistance due to the intrinsic and extrinsic characteristics caused by magnetization and sample geometry, respectively. The drift voltage due to drift resistance restricted the PHR ratio and could be compensated for by using the auxiliary current Ix for the sensing current Iy to enhance PHR ratio. A huge PHR ratio over 3000% (±1500%) with the linearity and small hysteresis for the magnetic field experimentally obtained using biaxial currents and could be explained by the anisotropic characteristic of the magnetoresistance, which is influenced by the exchange coupling field (Hex) induced by the antiferromagnetic NiO layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7853-7858 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermalization of nonequilibrium electrons and phonons is investigated theoretically within the framework of a semiclassical description of the Boltzmann equation. The electrons are assumed to be excited in the intraband absorption in a polar semiconductor and subsequently undergo a Fröhlich interaction to generate hot phonons. The coupled nonlinear Boltzmann equations for the electron-phonon system are directly solved numerically utilizing a discretization scheme. Consequently, a detailed analysis is given of the relaxation dynamics of the distribution functions and the decay of the hot electron and phonon temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5783-5785 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The uniaxial anisotropy field HK and angle γ from exchange coupling field in anisotropic magnetoresistance sample has been analyzed on the basis of the rotational magnetization of single domain. The anisotropy field HK in bilayer NiO(30 nm)/NiFe(t) obtained from the measured magnetoresistance profiles at magnetizing angle θ=0° and 90° from the exchange coupling field changes from positive to negative as the thickness of NiFe increases, transition at about 20 nm. The anisotropy field |HK|, and angle γ show a minimum values at the transition thickness, which is the optimum thickness in anisotropic magnetoresistance sample design in order to increase the field sensitivity and reduces hysteresis loss. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3004-3006 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The enhanced positive magnetoresistance effect has been observed in GaAs containing nanoscale magnetic clusters. The ferromagnetic metallic clusters were embedded into GaAs by Mn ion implantation and rapid thermal annealing. Positive magnetoresistance in these structures has been observed and attributed to the enhanced geometric magnetoresistance effect in inhomogeneous semiconductors with metallic inclusions. The additional enhancement of positive magnetoresistance under light illumination is due to the higher mobility of photoexcited electrons in comparison with the mobility of holes in p-type GaAs prepared by Mn ion implantation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...