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  • 1
    Electronic Resource
    Electronic Resource
    Extremely low non-alloyed specific contact resistance ρc (10−8 Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C-doped (1021 cm−3) p++GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8227-8232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific contact resistance ρc of non-alloyed ohmic metals (Mo/Au and WSix) to p-type GaAs is evaluated by transmission line method (TLM) patterns for various doping concentrations from 8×1018 to 1021 cm−3. The obtained specific contact resistance ρc, less than 10−8 Ω cm2, to metalorganic molecular beam epitaxy grown C-doped ( 1021 cm−3) GaAs is the lowest reported value. From the application point of view for the emitter electrodes of PNp type (two-dimensional electron gas base) heterojunction bipolar transistors, the specific contact resistance of a refractory metal, or the sputter-deposited WSix (x=0.45), is also studied. By reducing the growth temperature of molecular beam epitaxy from 600 to 450 °C and enhancing the As4/Ga flux ratio to 15, a nondiffusive heavily Be doped (1020 cm−3) GaAs is obtained. The specific contact resistance of the WSix to this sample is less than 10−6 Ω cm2. The obtained specific contact resistance can be well explained by a simple modeling based on the tunneling transport of light holes. Secondary ion mass spectroscopy analysis of the depth profile under heat acceleration shows a small diffusion of dopants for Be doped (1020 cm−3) GaAs and C-doped (1021 cm−3) GaAs. In addition, the specific contact resistance ρcISO of the isoheterojunction (p+GaAs/p+AlxGa1−xAs) is also evaluated by TLM patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347427
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  • 2
    Electronic Resource
    Electronic Resource
    Dependence of ZnTe-based contact structure properties on nitrogen concentration (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 388-390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of nitrogen concentration on the properties of ZnTe-based contact structures, which consist of p-ZnTe layers, ZnSe/ZnTe graded superlattices and p-ZnSe layers is described. The nitrogen concentration of the ZnTe layer was varied by using a modulation doping method. Ohmic I–V characteristics were observed when the nitrogen concentration of the ZnTe layer was as low as 3×1018 cm−3. When the nitrogen concentration rose above 1×1019 cm−3, however, no current was observed in the I–V curves. Nitrogen diffusion from the ZnTe layer to the superlattice and the ZnSe layer was observed by SIMS analysis and PL measurement. The ZnSe layers became highly resistive, probably because deep donors were induced by the nitrogen diffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116694
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  • 3
    Electronic Resource
    Electronic Resource
    Disordering of the ZnCdSe single quantum well structure by Cd diffusion (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3572-3574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of annealing on a ZnCdSe single quantum well (SQW) structure with ZnCdSSe/ZnSSe superlattice optical guiding layers are investigated. X-ray diffraction and photoluminescence (PL) measurements showed disordering of a ZnCdSSe/ZnSSe superlattice after annealing at about 500 °C. The PL peak energy of the SQW shifted to the higher energy side, and the linewidth narrowed in the sample annealed at 300 °C. Cadmium diffusion was confirmed by secondary ion mass spectrometry. We found that the disordering of the ZnCdSSe/ZnSSe superlattice and the changes in the emissions from the SQW were due to the Cd diffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117210
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  • 4
    Electronic Resource
    Electronic Resource
    The Hypothalamic Vasopressinergic Neurons of the Inbred Polydipsic Mouse (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 689 (1993), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1993.tb55607.x
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  • 5
    Electronic Resource
    Electronic Resource
    Efficient recursive implementation of the modified Broyden method and the direct inversion in the iterative subspace method: Acceleration of self-consistent calculations (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 4426-4438 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An efficient recursive procedure to solve N-dimensional nonlinear equations using the modified Broyden method is described. This procedure is extended to include the direct inversion in the iterative subspace (DIIS) method to further improve the rate of convergence in iterative calculations. In the recursive procedures. the approximate solutions are constructed as linear combinations of n vectors of length N. The calculations are reduced to determine the appropriate coefficients of the linear combinations. The coefficients are evaluated through small matrix operations, the size of which are at most (n+1)×(n+1) except for the generation of a n×n matrix, where n is the iteration number. Storage is required only for the n vectors and the small matrices. The procedures described below can be applied to large systems. To examine the efficiency of the methods, some numerical results are presented in the context of self-consistent calculations of liquid structure using the reference interaction site model (RISM) integral equation and a molecule-site form of the Ornstein–Zernike integral equation. The results indicate that significant acceleration with respect to the Picard iteration method has been achieved by the recursive procedures: The converged solution is obtained in a very small number of iterations and in a fraction of the CPU time. Moreover, the extended method which includes the DIIS approach has further improved the rate of convergence. It also enables solutions to be obtained in an otherwise divergent case. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475854
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  • 6
    Electronic Resource
    Electronic Resource
    Control of the II–VI/GaAs interface reaction using hydrogen radical and Zn/As fluxes (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6165-6170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lifetime of II–VI-based blue-green laser diodes on GaAs substrates is limited by rapid degradation in the active layers. This degradation has been observed as dark defects in the active layer during the laser operation, where defects occurred due to stacking faults that originated from the Ga2Se3 compounds at the ZnSe/GaAs interface. The reported value of the density of stacking faults of the II–VI lasers was in the order of 105 cm−2. To extend the lifetime, surface treatment of the GaAs substrate and control of the interface reaction are necessary. We investigated a new treatment technique using hydrogen-radical and Zn/As fluxes. We fabricated ZnSe-based double-hetero (DH) structures on a treated GaAs substrate and measured the density of dark defects in the light emitter area by electroluminescence microscopy. Chemical bonds at the interface were evaluated by x-ray photoelectron spectroscopy. A dark defect density of less than 105 cm−2 was obtained when the As-terminated GaAs surface was Zn treated. The Zn treatment prevented the formation of the Ga2Se3 layers. When we alternated the exposure between Zn and As fluxes, excess ZnAsx interfacial layers were formed and the quality of the DH structure was unacceptable. However, hydrogen-radical exposure before and during the Zn/As treatment effectively removed the excess ZnAsx compounds, and the density of dark defects fell to 2×104 cm−2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364399
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  • 7
    Electronic Resource
    Electronic Resource
    Serotonergic Neurones in the Dorsal Raphe Nucleus That Project into the Medial Preoptic Area Contain Oestrogen Receptor β (2001)
    Oxford, UK : Blackwell Science, Ltd
    Journal of neuroendocrinology 13 (2001), S. 0 
    Details
    ISSN: 1365-2826
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Serotonin is involved in female sexual behaviour in which the medial preoptic area (MPA) has a pivotal role. The present study used immunohistochemistry, in situ hybridization and retrograde transport analysis to investigate whether serotonin neurones in the dorsal raphe nucleus (DRN) of females projecting into the MPA contained oestrogen receptor α or β. The projection of serotonin neurones from the DRN to the MPA was confirmed using the microinjection of Fluoro-Gold (FG), a fluorescent retrograde tracer, into the MPA of ovariectomized (OVX-group) and OVX-rats treated with oestradiol benzoate (E2-group). A number of serotonin neurones in the DRN were labelled with FG, indicating that these serotonin neurones in DRN project their terminals into the MPA. FG-labelled serotonin neurones expressed ERβ mRNA in the DRN, and the number of the serotonin neurones containing ERβ mRNA between the OVX-group and the E2-treated group was not significantly different. Serotonin neurones in the DRN did not express ERα-immunoreactivity. Since previous findings showed that the density of serotonin-immunoreactive fibres and the concentration of serotonin within the MPA was significantly lower in the E2-group than the OVX-group, our present observations suggested that the regulatory effects of E2 on the serotonergic neurone system in the MPA may be via ERβ within the serotonin-containing cells in the DRN of female rats.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2826.2001.00695.x
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  • 8
    Electronic Resource
    Electronic Resource
    Annexin-1 (Lipocortin-1)-Immunoreactivity in the Folliculo-Stellate Cells of Rat Anterior Pituitary: The Effect of Adrenalectomy and Corticosterone Treatment on Its Subcellular Distribution (2002)
    Oxford, UK : Blackwell Science Ltd
    Journal of neuroendocrinology 14 (2002), S. 0 
    Details
    ISSN: 1365-2826
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In the pituitary gland, annexin-1 (lipocortin-1) located in folliculo-stellate (FS) cells has been advocated as one of the candidates for paracrine agents produced by FS cells that modulate the release of pituitary hormones. However, the expression and distribution pattern of annexin-1 in FS cells under different circulating corticosteroid conditions has not been examined. Thus, by means of pre-embedding immunoelectron microscopy, we investigated the expression of annexin-1 in FS cells under different corticosteroid conditions. Annexin-1-immunoreactivity was observed in the cytoplasm; especially intense immunoreactivity was detected in the follicle surface of FS cells under control conditions. After adrenalectomy, annexin-1-immunoreactivity almost disappeared, but the immunoreactivity recovered with corticosterone replacement. The expression of glucocorticoid receptor immunoreactivity in the nucleus of FS cells also showed a similar pattern to annexin-1 associated with the changes in the corticosteroid conditions. However, S-100 immunoreactivity, a marker for FS cells, was not changed whatever the corticosteroid conditions. These results confirm that glucocorticoids regulate the annexin-1 expression and demonstrate the translocation of annexin-1 from intracellular to pericellular sites in the FS cells of the rat anterior pituitary gland.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2826.2002.00814.x
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  • 9
    Electronic Resource
    Electronic Resource
    Phosphorylation by cyclic AMP-dependent protein kinase of a human platelet Mr 22,000 GTP-binding protein (smg p21) having the same putative effector domain as the ras gene products
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 157 (1988), S. 851-860 
    Details
    ISSN: 0006-291X
    Keywords: [abr] G protein; GTP-binding protein ; [abr] GTPγS; guanosine 5'-(3-O-thio)triphosphate ; [abr] PAGE; polyacrylamide gel electrophoresis ; [abr] SDS; sodium dodecyl sulfate ; [abr] protein kinase A; cyclic AMP-dependent protein kinase ; [abr] ras p21; the ras gene product with a Mr of 21,000
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0006-291X(88)80953-7
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  • 10
    Electronic Resource
    Electronic Resource
    Phosphorylation by cyclic AMP-dependent protein kinase of a human platelet Mr 22,000 GTP-binding protein (smg p21) having the same putative effector domain as the ras gene products
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 157 (1988), S. 851-860 
    Details
    ISSN: 0006-291X
    Keywords: [abr] G protein; GTP-binding protein ; [abr] GTPγS; guanosine 5'-(3-O-thio)triphosphate ; [abr] PAGE; polyacrylamide gel electrophoresis ; [abr] SDS; sodium dodecyl sulfate ; [abr] protein kinase A; cyclic AMP-dependent protein kinase ; [abr] ras p21; the ras gene product with a Mr of 21,000
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0006-291X(88)80953-7
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