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  • 1
    Electronic Resource
    Electronic Resource
    High field electrical conduction and breakdown in silicon incorporated polyethylene films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 919-924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage (I-V) characteristics of silicon-incorporated polyethylene films fabricated by plasma polymerization have been measured at very high electric fields. The experimental results show that the electric conduction at high fields is due mainly to Fowler–Nordheim type tunneling injection of holes from the anode, and that the incorporation of silicon in polyethylene creates hole traps, thus suppressing the conduction current and enhancing the breakdown strength. The amount of positive space charge resulting from the hole trapping increases with increasing magnitude and duration of the applied field for a fixed silicon content, and increases with increasing silicon content for a fixed magnitude and duration of the applied field. This positive space charge tends to suppress the actual field at the hole injecting contact and to enhance the actual field at the electron injecting contact. For fields higher than a certain critical value, the rate of the current increase with field changes rapidly. This phenomenon is attributed to the onset of double injection. This means that the contribution of the electron current to the total current becomes significant due to the gradual enhancement of the field at the electron injecting contact by the large amount of accumulated positive space charge. It is concluded that silicon incorporated in polyethylene introduces new hole traps which in turn reduces the hole mobility and creates more positive trapped space charge. The overall effect would be to reduce the conduction current and to increase the breakdown strength of the polyethylene if a proper amount of silicon is incorporated in it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349599
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  • 2
    Electronic Resource
    Electronic Resource
    High-field hole injection, conduction, and breakdown in polyethylene films fabricated by plasma polymerization (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2489-2496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage (I-V) characteristics of polyethylene films fabricated by plasma polymerization have been measured at very high electric fields using linear ramp voltages. Experimental results show that at average fields higher than 1 MV/cm, electric conduction is mainly due to the Fowler–Nordheim-type tunneling injection of holes from the anode and the high hole mobility. There is no evidence of impact ionization at fields close to the breakdown strength. High-field conduction is filamentary and governed by the trapped hole space charge. Internal discharges such as electrical treeing and breakdown are initiated by thermal instability within high-current density regions of main conduction filaments (or channels), and then followed by the creation of low-density domains to provide large mean free paths for subsequent impact ionization which leads to an indefinite increase in carrier multiplication and final destruction of the material inside the filaments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348966
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  • 3
    Electronic Resource
    Electronic Resource
    Ultraviolet absorption and photoconduction spectra of polyimide films fabricated at various curing temperatures (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 3445-3451 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The absorption and photoconduction spectra in the ultraviolet region for PMDA-ODA polyimide films fabricated under various curing temperatures have been measured. There are four absorption peaks located at 3.65, 4.35, 5.65, and 6.40 eV in the fully cured polyimide films. The peak at 6.40 eV is practically independent of the curing temperature, but the other three peaks increase with increasing curing temperature. These four peaks are due to intra- and intermolecular optical transitions. In the photoconduction quantum efficiency spectra, there are also four peaks in the fully cured polyimide films but they are located at 3.55, 4.05, 4.90, and 5.80 eV. Analysis of the photoconduction quantum efficiency spectra yields values of 4.17 and 4.37 eV as the potential barrier heights for photoemission from Au and Ag electrodes to polyimide, respectively. The quantum efficiency increases with increasing applied electric field, following closely the Onsager theory with a thermalization separation 30 A(ring) in the uv region. The primary yield increases with increasing curing temperature. All experimental results are briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465070
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2457-2463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide films were deposited on crystalline silicon substrates by electron cyclotron resonant (ECR) microwave plasma-enhanced chemical vapor deposition (PECVD). Films were grown on Si〈100〉 substrates at temperatures of 140–600 °C, flow rates of 0.5–10 sccm SiH4, 10–30 sccm O2, and at a pressure of 10−3 Torr. Infrared absorption spectroscopy of the samples indicated no detectable SiH, OH, or SiOH groups. Neither an afterglow chemistry nor He dilution was required to eliminate H impurities as was previously reported for silicon oxide films deposited from rf plasmas. This suggests that significant differences exist between rf and ECR microwave plasma chemistries. We have found that the stoichiometry and index of refraction was not sensitive to oxidant ratio for a wide range of conditions in contrast to other studies. Stoichiometric SiO2 films, with good physical properties, were grown for a much wider range of oxidant ratios relative to those which are characteristic of the rf PECVD technique. In addition, films grown under optimal conditions had infrared absorption spectra nearly identical to those of thermally grown oxides and index of refraction of 1.456, as measured by ellipsometry. We concluded that by using an ECR microwave plasma, SiO2 films with optical and bonding properties comparable to oxides thermally grown at 1000 °C in dry oxygen can be deposited at a low temperature (350 °C) and a low pressure (10−3 Torr) in a O2/SiH4 reactant gas mixture without the need for a carrier gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342815
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of the amorphous-to-microcrystalline transition of hydrogenated silicon films by spectroscopic ellipsometry (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 688-693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry and x-ray diffraction measurements have been used to obtain structural information on hydrogenated amorphous and microcrystalline silicon thin films. The films were deposited onto quartz substrates from a microwave plasma in SiH4/H2 gas mixture. For ellipsometric data analysis, the films were modeled as multilayer structures with the dielectric response of each layer calculated as a function of the amorphous, crystallite, and void volume fractions through an effective-medium approximation. Results indicate that the transition from amorphous-to-microcrystalline films is accompanied by a reduction in the material density and a significant increase in the surface roughness overlayer. X-ray diffraction measurements estimate a higher volume fraction of crystallites as compared to that obtained from optical data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341962
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  • 6
    Electronic Resource
    Electronic Resource
    Amorphous silicon–tellurium alloys (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2036-2040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon–tellurium alloy thin films were fabricated by coevaporation over the composition range of 0–82 at. % Te. The electronic and optical properties of these films were systematically investigated over this same range of composition. The optical gap of these films was found to decrease monotonically with increasing Te content. Conduction near room temperature was due to extended state conduction, while variable range hopping dominated below 250 K. The incorporation of Te in concentrations of less than 1 at. % was found to produce an increase in the density of localized states at the Fermi level and a decrease in the activation energy. This was attributed to the Te being incorporated as a substitutional, fourfold coordinated, double donor in a-Si. At approximately 60 at. % Te, a decrease in the density of localized states at the Fermi level, and an increase in the activation energy and photoresponse was indicated. This was attributed to the possible formation of a less defective a-Si:Te compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337205
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  • 7
    Electronic Resource
    Electronic Resource
    Plasma implantation technique for incorporation of foreign elements into polymer films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 986-988 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A plasma formed in a gas containing desired foreign elements dissociates molecules, and activates and ionizes foreign elements. These reactive foreign elements are then implanted into a polymer film under an appropriate bias field and substrate temperature. We report that nitrogen and silicon are well incorporated into polyethylene films using this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138650
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  • 8
    Electronic Resource
    Electronic Resource
    Electron-cyclotron-resonant microwave plasma system for thin-film deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 493-496 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new microwave plasma method for the fabrication of solid films is presented. Microwave power is efficiently transferred to the plasma, resulting in minimal power requirements. Uniform silicon films have been fabricated with a wide range of optical and electronic properties, at high deposition rates and low substrate temperatures. In a magnetically well-confined plasma operating in the vicinity of electron-cyclotron-resonance (ECR) conditions, film properties are strongly dependent upon the intensity of the externally applied dc magnetic field. The departure of the plasma chemistry from that associated with conventional rf systems is manifested in the observation of some opposite trends in the growth of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138915
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  • 9
    Electronic Resource
    Electronic Resource
    High-field electrical conduction in polyimide films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7267-7275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conduction current in polyimide films has been measured at high fields (〉1.4 MV cm−1) using a Au metal (M)–polyimide film (P)–p-silicon (S)–MIS structure. On the basis of the current–voltage characteristics coupled with the capacitance–voltage characteristics measured under various conditions, it is found that electrical conduction at high fields is mainly due to Fowler–Nordheim type tunneling injection of electrons from the Au gate electrode if it is negatively biased, or from the PI/Si contact if the Au gate electrode is positively biased. The conduction current is strongly dependent on the concentration and the centroid location of the trapped charges. Computer simulation reveals that the trap concentration is of the order of 6×1017 cm−3 with its centroid located near the electron injecting contact, and that the trap ledge occurs only when the concentration of the net negatively trapped electron charge is large or the location of its centroid is close to the injecting contact. The decay of the dark charging current after the application of a step-function direct current field is associated mainly with the time-dependent trap-filling process. The photoconduction under an ultraviolet light illumination is due mainly to the photogeneration of free holes. Polyimide is very sensitive to the environmental humidity. Electrical conduction current increases and the breakdown strength decreases rapidly with increasing humidity. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370543
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  • 10
    Electronic Resource
    Electronic Resource
    Capacitance transient spectroscopy in metal-insulator-metal systems and its application to the determination of trap parameters in polyimide films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1089-1094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance of a metal-insulator-metal system with the presence of a space charge in the insulator has been derived under various conditions. On the basis of the transient behavior of the capacitance as a function of the applied voltage and temperature, trap parameters in an insulator can be determined. Polyimide films were used to demonstrate the use of this capacitance transient spectroscopy for the determination of the concentrations of the originally existing traps as well as the new traps created by dissociative trapping of carriers injected from the electrical contact at high fields. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369233
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