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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 386-391 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain effects on optical gain in hexagonal bulk GaN are calculated and explained in terms of the change in the effective hexagonal crystal field component. Qualitatively, even unstrained wurtzite structures correspond to cubic crystals with a proper biaxial stress applied. Such biaxial stress results in effective tensile deformation along the c axis ([111] direction in cubic crystals) and compressive strain in the perpendicular plane. Therefore, the light mode with a polarization vector parallel to the c axis is suppressed, while the mode with a perpendicular polarization is enhanced in wurtzite structures. Thus, compared to cubic structures with similar material parameters, a strong optical anisotropy of wurtzites results in enhanced gain for certain light polarizations, which make wurtzite structures superior for lower-threshold lasing. These qualitative arguments are illustrated by numerical calculations of optical gain in biaxially strained wurtzite GaN, based on a 6×6 envelope-function Hamiltonian. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2504-2506 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain on valence band spectra in both bulk and in pseudomorphic GaN quantum wells is studied theoretically using recent experimental results for deformation potential constants. Wave functions and dispersion curves for A-, B- and C-hole subbands are obtained from linear combination of bulk analytical solutions for the 3×3 würtzite block-Hamiltonian. A detailed analysis is presented for the dependence of hole spectrum on quantum well width, depth, and strain due to lattice mismatch.
    Type of Medium: Electronic Resource
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