ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate quantum well infrared photodetectors based on a GaAs/Ga0.51In0.49P superlattice structure grown by gas-source molecular beam epitaxy. Wafers were grown with varying well widths. Wells of 40, 65, and 75 Å resulted in peak detection wavelengths of 10.4, 12.8, and 13.3 μm with a cutoff wavelength of 13.5, 15, and 15.5 μm, respectively. The measured peak and cutoff wavelengths match those predicted by eight band theoretical analysis. Measured dark currents were lower than equivalent GaAs/AlGaAs samples. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118390
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