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  • 1
    Electronic Resource
    Electronic Resource
    A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1862-1864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator- superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75–115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30±3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116038
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1002-1004 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully fabricated high-quality and high-current density (Jc≈4 000 A/cm2) superconductor-insulator-superconductor (SIS) junctions on freestanding thin (∼1 μm) silicon nitride (SiN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109877
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    Paper (German National Licenses)
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