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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-valve structures with a magnetic material buffer layer, CoNbZr/NiFe/Co90Fe10/Cu/Co90Fe10/Fe50Mn50, were prepared on a oxidized Si substrate. From x-ray diffraction analysis, it was shown that the CoNbZr/NiFe buffer layer enhances the fcc (111) orientation of the spin-valve structure on oxidized Si. After annealing, the giant magnetoresistance (GMR) ratio of Δρ/ρ=8% and the soft magnetic properties of Hc=0.1 Oe and Hk=2.8 Oe were obtained. The sensitivity of GMR, Δ(Δρ/ρ)/ΔH, of 1.4%/Oe is achieved. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 1863-1866 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Thin Rb1−xCsxI mixed crystals have been grown from the melt in a very small gap formed in between a pair of quartz plates and reflection spectra were measured in the uv-light region at low temperature. Continuous spectral changes of the exciton bands with the composition x suggest strongly the formation of extended solid solution both in the RbI-rich (0.0≤x≤0.4) and CsI-rich (0.7≤x≤1.0) regions. The formation was confirmed by x-ray diffraction, and the compositional change of the lattice constant was determined. These results are in contrast to the eutectic type phase relation with only a limited solid solubility observed in the bulk state of the RbI–CsI binary system. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1388-1390 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An x-ray diffraction study was carried out on the crystal structure of the high pressure phases of bismuth, Bi III, Bi III', and Bi IV, using high-energy monochromatic synchrotron radiation from the TRISTAN Accumulation Ring (6.5 GeV). Powdered samples were compressed in a cubic-type multianvil press MAX80 at pressures ranging from 3 to 6 GPa. In some compression runs, the sample temperature was raised up to 550 K. It was possible to obtain diffraction patterns containing many diffraction peaks and assign unambiguously indices to them. The crystal structure of Bi III is tetragonal with ten atoms contained in the unit cell. It has been shown that, when pressure is increased across the transition pressure between Bi III and Bi III', no change in the diffraction pattern takes place, indicating that the two phases have the same structure. Bi IV which exists in the high temperature region in the P-T diagram has been shown to have the structure with a monoclinic symmetry and eight atoms in the unit cell. All the structures determined can be regarded as a distorted body-centered-cubic lattice structure. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5581-5584 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concept of spin-filter spin-valve (SFSV) films is reviewed. The dependence of the free layer structure on the spin-filter effect was investigated by using model films and two types of free layers were compared, a single CoFe layer and a conventional NiFe/Co free layer. At the same magnetic thickness of the free layer, the SFSV films with a CoFe free layer showed a larger magnetoresistance (MR) ratio than those with a NiFe/Co free layer. This is partly attributed to the thinner CoFe free layer thickness, which is due to the fact that the CoFe free layer has higher Bs than the NiFe/Co free layer. Moreover, SFSV films with a CoFe free layer still showed a larger MR ratio when the free layer thickness was the same. It suggests that other factors contribute to the high MR performance, such as the quality of the interface between a free layer and a high conductance layer. Film performance of MR 9% to 10%, ΔRs 1.5–2.0 Ω, Hcea∼3 Oe, and λs≤±0.5 ppm was obtained with a single CoFe free layer and synthetic antiferromagnetic pinned structure. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2566-2568 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of implanted hydrogen on removal of oxygen from a Si top layer on buried oxide by the post-implantation annealing were studied. The Si top layer and the buried oxide layer were analyzed by secondary ion mass spectroscopy (SIMS) and cross-sectional transmission electron microscopy (X-TEM). With implanted hydrogen, oxygen concentration in the Si top layer could be reduced below the SIMS detection limit by annealing at relatively lower temperature 1150 °C for 2 h in an ambient of N2. It is verified by X-TEM that the Si top layer is precipitate-free. An amount of hydrogen comparable to the amount of oxygen contained in the Si top layer is needed to remove the oxygen completely. This effective removal of oxygen is attributed to the suppression of oxygen precipitation and the enhanced dissolution of oxide precipitates by hydrogen.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6665-6673 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing (RTA) has been carried out by using a graphite strip heater for Si substrates which are implanted with As+ ions at an incident energy of 1 MeV to a high dose of 1×1015/cm2. Annealing characteristics for As-implanted Si substrates have been investigated by Rutherford backscattering measurements and by transmission electron microscopic observations. The electrical properties for the buried n-type layer formed in the substrate during RTA have been examined by differential Hall measurements. A comparison between the annealing process of RTA and that of furnace annealing is made. The experimental results obtained from this work show clearly that the growth of secondary defects in high-energy As+-implanted layers in Si can be effectively suppressed by the use of RTA at 1050 °C, which is not the case for furnace annealing under conventional conditions, e.g., at 1000 °C for 60 min. It has been also shown that a high electrical activation of implanted As atoms is achieved by RTA at 1050 °C, resulting in the formation of a buried n-type layer with a maximum carrier concentration of around 1.5×1019/cm3. Some anomalous electrical properties have been measured in the samples treated by RTA.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4116-4122 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of two-step annealing, rapid thermal annealing (RTA) followed by furnace annealing (FA), on the crystalline and electrical properties of buried n-type layers formed in (100) Si by As implantation at an incident energy of 1 MeV have been investigated. The crystalline properties have been examined by Rutherford backscattering measurements and by transmission electron microscopic observations. The electrical properties have been studied by differential Hall measurements. A comparison between the annealing process of two-step annealing and that of RTA or FA alone is made. The experimental results obtained from this work clearly show that buried n+ layers without residual defects can be formed by the use of RTA at 1050 °C followed by FA at 1000 °C, and that they are difficult to be formed by one-step annealing of FA or of RTA.
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  • 8
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Taking advantage of the high brightness of synchrotron radiation, changes in the microstructure of silicon steel sheets in the secondary recrystallization process at 1233 K were measured by consecutive recording of the pole figure using a newly developed system consisting of the x-ray diffractometer and the translating imaging plate and by real-time observation of Laue topographic pattern using two kinds of TV camera. It was shown that {110} 〈001〉 oriented grains grew, after a certain incubation period of time, at a burst and occupied most of the sample volume. There was an appreciable anisotropy in the migration of the recrystallization front. When tensile strain was applied to the sample, growth of the {110} 〈001〉 oriented grains was appreciably delayed.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2406-2409 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes the performance of a four-circle diffractometer installed at the Photon Factory for extensive use with synchrotron radiation for various investigations in the field of solid state physics. Its main part is based on a Huber 5020.4 type diffractometer with a crystal analyzer designed for vertical diffraction plane attitude. The diffractometer is mounted on a carriage table, which can precisely adjust the position of the diffractometer with respect to the incident beam monochromatized by successive reflection from a pair of Si(111) crystals. With a perfect crystal used as the analyzer the large size of the ω and 2θ circles enables us to make high resolution (ΔQ/Q∼10−4) measurements of x-ray scattering intensity distribution from a single crystal. The large space in the center of the diffractometer permits us to put a pressurizing cell or a cryostat on the φ table for scattering measurements at controlled pressures and temperatures. Selected examples of the application are presented.
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  • 10
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: High energy synchrotron radiation emitted from the bending magnet of the TRISTAN accumulation ring (6.5 GeV) at the National Laboratory for High Energy Physics has been used for the high pressure–high temperature diffraction experiments using a multianvil press system, MAX80. Owing to the specific features of high energy synchroton radiation, significant improvements have been brought to the high pressure research. The wide energy range of diffraction spectrum leads to an increase in the number of observable diffraction peaks in an energy-dispersive method, resulting in an increase in the accuracy of the measurements of the lattice and thermal parameters. Due to the high penetrating power of radiation, diffraction patterns can be taken in a short time from materials containing heavy elements or materials surrounded by a metal foil. Typical examples of high pressure–high temperature experiments with high energy synchrotron radiation are also described.
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