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  • 1
    Electronic Resource
    Electronic Resource
    Structural control of nonequilibrium WSi2.6 thin films by external stress (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 733-739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of external stresses on a crystallization and a precipitation process for amorphous WSi2.6 films has been studied. An as-deposited amorphous WSi2.6 has crystallized as a hexagonal WSi2 by annealing at 400 °C for 1 h, and excess Si has precipitated to the WSi2/substrate interface. To verify whether the driving force of the precipitation to the interface is a stress relaxation, calculations of the volume change by a crystallization, precipitations (in the film and to the interface), and the stress measurement were performed. It was revealed that as-deposited film had a tensile stress, and it increased by precipitation of excess Si to the interface. That is, the driving force of the precipitation to the interface is not the stress relaxation. Then we tried to apply larger stress (compression and tension) to make clear an effect of stress on the structural change. By annealing at 350 °C under external tensile stress,the Si precipitated at the interface was not observed.On the other hand, by annealing under external compressive stress, a greater amount of Si has precipitated than that without external stress. These phenomena seem to be related to the stress-assisted diffusion similar to Nabarro–Herring creep.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353330
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3444-3449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric properties of the metal/ferroelectric/insulator/semiconductor (MFIS) structure were investigated using the Pt/YMnO3/Y2O3/Si structure. The ferroelectric C–V hysteresis was observed for not only the Pt/YMnO3(0001)/Y2O3/Si capacitor but also the Pt/amorphousYMnO3/Y2O3/Si capacitor. The polarization evaluated by conventional C–V measurement should include interfacial polarization and rearrangement of the space charge together with the spontaneous polarization by ferroelectricity. To eliminate the generation of the interfacial polarization and the rearrangement of the space charge, the shorter charging time should be used to evaluate the ferroelectricity of the MFIS capacitor. Therefore, we propose the pulsed C–V measurement as a new method for evaluating the MF(I)S capacitor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372364
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  • 3
    Electronic Resource
    Electronic Resource
    Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7084-7088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have proposed ReMnO3 (Re: rare earth) thin films for nonvolatile memory devices. We examine the growth mechanism of YMnO3 films on (0001)ZnO:Al/(0001) sapphire substrate using rf magnetron sputtering and pulsed laser deposition methods with oxide compound target. We have succeeded in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001) sapphire substrate, and polycrystalline films on (111)Pt/(111)MgO. For an optimal structure, the film needed much less oxygen from the gas phase compared to other oxide films. The composition (Y/Mn ratio) of the YMnO3 films changed drastically by varying the partial oxygen pressure in the sputtering gas. In addition the Y/Mn ratio slinfled with sputter time due to target surface modification, probably caused by Y segregation. An extremely small amount of oxygen is required to form the YMnO3 crystal. This was confirmed by pulsed laser deposition experiments. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363719
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  • 4
    Electronic Resource
    Electronic Resource
    Orientation control of (Ca,Sr)CuO2 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3805-3811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Control of the orientation of (Ca,Sr)CuO2 films with (001) and (101) texture on glass substrates, and (110) and (101) texture on (001) MgO substrates was obtained by changing the sputtering conditions. Although (110) and (101) films on (001) MgO substrates were epitaxial, they showed a double positioning and fourfold rotation symmetry structure. Calculations using the cohesive energy between the film and the MgO single crystal substrate were used to confirm the epitaxial relationships between the film and the MgO substrate. The reason for the change in the texture of the films as a function of the substrate is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358556
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  • 5
    Electronic Resource
    Electronic Resource
    LiNbO3 film with a new epitaxial orientation on R-cut sapphire (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2169-2176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is argued that epitaxial films of ionically bonded materials are more easily achieved than those of covalently bonded materials. Good epitaxy can be achieved despite a relatively large lattice mismatch with the substrate. However, a strong influence of interfacial energy can result in difficulty in controlling the orientation of epitaxial films. The crystallographic orientation of ionically bonded LiNbO3 films was therefore studied. Growth orientation was controlled by paying attention to the sharing between octahedra in the structure and to the formation of the octahedra containing lithium and niobium ions. The orientation of the film on R-cut (011¯2) sapphire changed from (011¯2) to (101¯0) via (112¯0) by increasing the Li concentration in the film. Lithium concentration could be increased by increasing the rf power, O2 partial pressure and total gas pressure, and decreasing the substrate temperature during sputtering deposition. The (011¯2) and (101¯0) films were epitaxial with respect to the substrate. The (101¯0) epitaxial film, in particular, was of excellent quality. Detailed studies on the crystallinity and the formation mechanism of LiNbO3 film with a new epitaxial orientation (101¯0) on (011¯2) sapphire was performed. Based on the degree of freedom in sharing of octahedra containing Li and Nb, sufficient Li concentration and effects of the interfacial restriction are considered to promote the formation of the (101¯0) epitaxial film. If deposition is performed under the conditions by which (101¯0) epitaxial film is formed, excellent epitaxial film can be formed because the interface between (101¯0) LiNbO3 and (011¯2) sapphire has a larger cohesive energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356277
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  • 6
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of c-oriented YMnO3 films deposited on Si substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 414-416 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have proposed the use of RMnO3 (R: rare earth elements) films for metal–ferroelectric–semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (ferroelectric RAMs). This reports the production of YMnO3 films on Si substrates for MFSFET with confirmation of the distinct ferroelectricity by P–E hysteresis and capacitance–voltage (C–V) measurement. (0001)-oriented YMnO3 films were obtained on a (111)Si substrate using a pulsed-laser deposition method. Although the Pt/YMnO3/Si structure exhibits a very small remnant polarization of 1.2 nC/cm2, it has clear ferroelectric polarization switching type C–V characteristics with a memory window of 1.1 V. The dielectric constant and the dissipation factor were 27.8 and 0.035, respectively. The polarization switching characteristics are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122269
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  • 7
    Electronic Resource
    Electronic Resource
    Dissolution pits and Si epitaxial regrowth in the Al/(111)Si system (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4499-4502 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction between an Al film and a (111) single-crystal Si has been studied by microscopic observation. Dissolution pits were formed on the Si surface due to dissolution of Si into the Al film, by annealing above 300 °C. The shapes of the pits were triangular or hexagonal shaped with a flat bottom. Each side of the pits was parallel to the 〈110〉 directions of the substrate. At the dissolution pits, triangular or hexagonal Si islands regrew epitaxially to the substrate in the Al film. A mechanism for the formation of the dissolution pits and Si epitaxial regrowth is proposed in relation to the strain fields affected by the strain centers in the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341276
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1011-1013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have proposed ReMnO3 (Re:rare earth) thin films as a new candidate for nonvolatile memory devices. In this letter, we report on fabrication of (0001) YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire, and (111)Pt/(111)MgO using rf magnetron sputtering. We succeeded in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001) sapphire substrate, and polycrystalline films on (111)Pt/(111)MgO. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The dielectric permittivities of both films are smaller than those reported for YMnO3 single crystal. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117969
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  • 9
    Electronic Resource
    Electronic Resource
    Ferroelectricity of YMnO3 thin films prepared via solution (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 719-721 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed the ferroelectricity at room temperature in YMnO3 thin films prepared via solution. Precursor films of YMnO3 on Pt/sapphire or Y2O3/Si substrates were heat treated in vacuum or in air for controlling the crystallinity. X-ray diffraction measurements indicated that each film was a single phase of hexagonal YMnO3. While the film heat treated in air indicated an insufficient crystallinity, the film heat treated in vacuum showed a high crystallinity with a c-axis preferred orientation. The leakage current of the film heat treated in vacuum was at least three orders of magnitude lower than that heat treated in air. The ferroelectricity of the film heat treated in vacuum was confirmed in the capacitance–voltage measurement at room temperature due to its high crystallinity with the c-axis preferred orientation and the small leakage current. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124493
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  • 10
    Electronic Resource
    Electronic Resource
    Microstructure and Dielectric Properties of YMnO3 Thin Films Prepared by Dip-Coating (1998)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: YMnO3 thin films with Y/Mn ratios from 1.00/1.05 to 1.00/0.90 were prepared by dip-coating from solution, in which starting materials were refluxed, and the effects of the Y/Mn ratio on the structure and dielectric properties of YMnO3 thin films were investigated. XRD measurements indicated that the films with the Y/Mn ratios in this study were a single phase of polycrystalline YMnO3. The lattice constants along the a-axis and c-axis lengthened with an increase in the Y/Mn ratio. FE-SEM micrographs of the films showed that the surface of the films became smoother and denser with an increase in the Y/Mn ratio. YMnO3 thin films with good dielectric properties were obtained with an Y/Mn ratio of 1.00/0.90, which gave the smoothest and densest microstructure and the smallest leakage current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1998.tb02491.x
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