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  • 1
    Online Resource
    Online Resource
    Basic and Applied Aspects of Vestibular Function. (1988)
    Hong Kong :Hong Kong University Press,
    Details
    Keywords: Computer software -- Development. ; Technical writing. ; Electronic books.
    Description / Table of Contents: This volume is the compilation of the series of original articles presentes at the International Symposium on Basic and Applied Aspects of Vestibular Function held in Hong Kong, September 13-16, 1987, in conjunction with the centenary celebration of the Faculty of Medicine, University of Hong Kong.
    Type of Medium: Online Resource
    Pages: 1 online resource (276 pages)
    Edition: 1st ed.
    ISBN: 9789882200340
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=677227
    DDC: 570
    Language: English
    Note: Intro -- Table of Contents -- Foreword / G. Melvill Jones -- Acknowledgements -- Symposium Organization -- Contributors -- Symposium Participants and Group Photograph -- Basic Aspects -- 1. The functional organization of the vestibular labyrinth and of some of its central pathways / J.M. Goldberg, L.B. Minor and C. Fernandez -- 2. Morphological and functional characteristics of semicircular canal afferents sensitive to head tilt / A.A. Perachio, J.D. Dickman and M.J. Correia -- 3. Spectral analysis of the spontaneous activity of tilt-sensitive units in the vestibular system of the decerebrate cat / P.W.F. Poon, J.C. Hwang, N.G. Daunton, Y.S. Chan and Y.M. Cheung -- 4. Functional organization of the horizontal vestibulo-oculomotor system in the cat brain stem / Y. Ohki, H. Shimazu and I. Suzuki -- 5. Physiological and morphological properties of brain stem neurons related to vestibular and saccadic eye movements in the cat / T. Kitama, Y. Ohki, H. Shimazu and K. Yoshida -- 6. Multidimensional analysis of vestibuloocular and vestibulocollic reflexes / B.W. Peterson and J.F. Baker -- 7. Responses of vestibular nuclear neurons to bidirectional off-vertical axis rotations in normal and hemilabyrinthectomized cats / Y.S. Chan, Y.M. Cheung and J.C. Hwang -- 8. Vestibular control of the cat forelimb / V.J. Wilson and R.H. Schor -- 9. Properties of vestibulospinal neurons receiving inhibitory inputs from the lingula of the cerebellum / N. Hirai -- Adaptation and Motion Sickness -- 10. Neurochemical and neuropharmacological studies on vestibular compensation/adaptation / M. Igarashi, G.C. Thompson, A.M. Thompson and S. Usami -- 11. Quantitative assessment of sensorimotor performance affected by motion sickness inducing stimulation / J.C. Hwang, P.W.F. Poon and N.Y.S. Tan -- 12. Serotonergic mechanisms in emesis / J.B. Lucot and G.H. Crampton. , 13. Immunocytochemical localization of glutamic acid decarboxylase (GAD) and substance P in neural areas mediating motion-induced emesis. Effects of vagal stimulation on GAD immunoreactivity / F. D'Amelio, M.A. Gibbs, W.R. Mehler, N.G. Daunton and R.A. Fox -- 14. Recovery from unilateral labyrinthectomy in primate: Effects of visual inputs and considerations upon Ewalds second law / D.S. Zee, M. Fetter and L. Proctor -- 15. Experimental studies of gastric dysfunction in motion sickness: The effect of gastric and vestibular stimulation on the vagal and splanchnic gastric efferents / A. Niijima, Z.Y. Jiang, N.G. Daunton and R.A. Fox -- 16. The effects of area postrema lesions and selective vagotomy on motion-induced conditioned taste aversion / R.A. Fox, R.L. Sutton and S. McKenna -- Clinical Assessment -- 17. Observations of vestibular functions in four patients with inner ear anomaly / J.-I. Suzuki, K. Kaga and K. Yabuki -- 18. The otolith-ocular reflex in man / R.W. Baloh, K. Beykirch, V. Honrubia and R.D. Yee -- Ventures in Space -- 19. Vestibular factors influencing the biomedical support of humans in space / B.K. Lichtenberg -- 20. MIT/Canadian Spacelab experiments on vestibular adaptation and space motion sickness / C.M. Oman, L.R. Young, D.G.D. Watt, K.E. Money, B.K. Lichtenberg, R.V. Kenyon and A.P. Arrott -- 21. Somatosensory-vestibular-sympathetic interactions in man under weightlessness simulated by head-out water immersion / T. Mano, S. Iwase, M. Saito, K. Koga, H. Abe, K. Inamura, Y. Matsukawa and M. Hashiba -- 22. Microgravity vestibular investigations: Experiments on vestibular and sensory-motor adaptation to space flight / M.F. Reschke -- 23. Macular bioaccelerometers on earth and in space / M.D. Ross, L. Cutler, G. Meyer, P. Vaziri and T. Lam -- Appendix (Abstracts) -- Index.
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  • 2
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    Unknown
    Proteolytic degradation and potential role of onconeural protein cdr2 in neurodegeneration (2016)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2016-06-03
    Description: Proteolytic degradation and potential role of onconeural protein cdr2 in neurodegeneration Cell Death and Disease 7, e2240 (June 2016). doi:10.1038/cddis.2016.151 Authors: J-Y Hwang, J Lee, C-K Oh, H W Kang, I-Y Hwang, J W Um, H C Park, S Kim, J-H Shin, W-Y Park, R B Darnell, H-D Um, K C Chung, K Kim & Y J Oh
    Electronic ISSN: 2041-4889
    Topics: Biology , Medicine
    Published by Nature Publishing Group (NPG)
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  • 3
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    Bio-Mooring Arrays and Long-Term Sediment Traps: Key Tools to Detect Change in the Biogeochemical and Ecological Functioning of Arctic Marine Ecosystems (2013)
    In:  EPIC3Arctic Observing Summit 2013, Vancouver, Canada, 2013-04-30-2013-05-02
    Details
    Publication Date: 2019-08-02
    Description: Through the transfer of carbon from the surface to the deep ocean via the passive sinking and active transport of organic material, the biological pump is a key global process for the regulation of atmospheric CO2. Over the last decades, studies relying on sediment traps and other bio-devices moored over an annual cycle in the Arctic Ocean helped to resolve how the Arctic biological pump is operating and how it is responding to global change. Here, we provide a short review of the pioneer work done in the 1980-90’s and we present key knowledge gained on Arctic ecosystem functioning with a series of case-studies conducted in the 2000’s on the basis of bio-moorings: (1) carbon export in response to warm anomalies in the main Arctic gateway, the Fram Strait; (2) ecosystem-level analyses in Beaufort Sea from a vertical flux perspective; (3) the importance of lateral processes for sinking flux events in the Central Basin; and (4) the impact of zooplankton life-cycle strategies on the biological pump in fjord-like systems. We also identify regional challenges and potential future research avenues in terms of new sampling tools and coordination for the development of an Arctic biogeochemical observatory network aligned with global initiatives. As such, this paper represents a call to sustain and further develop observing activities that rely on bio-mooring arrays in the Arctic Ocean over the next decade. By capturing the full seasonality of ice-covered environments, we argue that bio-moorings are one of the most powerful approaches to distinguish natural variability from actual shifts that might affect the structure and function of Arctic marine ecosystems in response to human-induced changes.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Conference , notRev
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  • 4
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    Integrated ocean carbon research: a summary of ocean carbon research, and vision of coordinated ocean carbon research and observations for the next decade (2021)
    UNESCO, Paris
    In:  EPIC3IOC Technical series, UNESCO, Paris, 158(170), 48 p.
    Details
    Publication Date: 2021-05-21
    Repository Name: EPIC Alfred Wegener Institut
    Type: Miscellaneous , notRev
    Format: application/pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Conduction and valence band photoemission mechanisms in two-dimensional–three-dimensional structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2442-2447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The active layers in heterojunction internal photoemission infrared detectors are always of thickness in the order of few hundred A(ring), and thus the behavior of the excited carriers should be described in a two-dimensional (2D) mode. Conduction and valence band photoemission mechanisms have been introduced in 2D–three-dimensional structures. The carrier behaviors of two carrier types, electron and hole, were discussed in the cases of PtSi/p-Si and p+-SiGe/p-Si, respectively. Parallel momentum conservation were well preserved for these two cases during carrier transportation across the heterojunction ballistically. Theoretical simulations were in good agreement with experimental data for both the electron and hole cases. The reason why p+-SiGe/p-Si photodiodes exhibit higher quantum efficiency than PtSi/p-Si diodes has also been discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357594
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial iridium silicide formation during deposition of Ir on Si(100) at high temperature under ultrahigh vacuum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1937-1939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The iridium silicide formation has been examined by depositing Ir on Si(100) at different substrate temperatures under ultrahigh vacuum. An epitaxial Ir3Si4 film was formed when an Ir film of 100 A(ring) was directly deposited on Si(100) at 475 °C and annealed at the same temperature for 1.5 h. The Ir3Si4 was not observed in the conventional annealing process at 475 °C. In contrast, a polycrystalline IrSi film was formed after deposition of an Ir film of 100 A(ring) on Si(100) at room temperature and followed by annealing at 475 °C for 1.5 h under ultrahigh vacuum. Formation of the epitaxial Ir3Si4 on Si(100) is attributed to the interfacial energy of the Ir3Si4/Si(100) interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357681
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  • 7
    Electronic Resource
    Electronic Resource
    Semiquantitative calculations of catalytic free energies in genetically modified enzymes (1987)
    s.l. : American Chemical Society
    Biochemistry 26 (1987), S. 2669-2673 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00384a003
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  • 8
    Electronic Resource
    Electronic Resource
    Stochastic simulation of the flow of a thin liquid film over a rough rotating disk (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5026-5033 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article addresses the depletion of thin liquid films due to centrifugation. A stochastic model of surface roughness is used, and the equation describing the flow of a thin viscous film over a rough rotating disk is solved by Monte Carlo techniques. Depletion histories of the thin film are given for several cases involving random surface asperities. It is found that surface roughness markedly enhances the retention of a thin liquid film on a rotating disk. The thinner the liquid layer, the more dominant is the effect of surface roughness. Moreover, different degrees of randomness of the surface asperities lead to different asymptotic limits of liquid retention.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343775
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of high-purity Si-doped molecular beam epitaxial GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4685-4702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity, lightly Si-doped (μ77∼70 000–126 000 cm2/V s and n77∼2–8×1014 cm−3) molecular beam epitaxy (MBE) GaAs layers have been characterized using variable-temperature Hall effect and C-V measurements, photothermal ionization spectroscopy, low-temperature photoluminescence (PL), and deep level transient spectroscopy (DLTS). The spectroscopic measurements of the residual donors and acceptors indicate that the pronounced increase in carrier concentration which is observed with increasing As flux (for a constant Ga flux) results from incorporation of additional residual S donors from the As source material, and not from reductions in the Si acceptor concentration or residual C acceptor concentration. The increase in carrier concentration with As flux is considerably more pronounced when using an alternative source of As, which introduces both S and 3 additional donor species. The C acceptor concentration increases with As flux using either As source, although the increase is much stronger with the alternative source. The dependence of C concentration on the As source implies that the As source itself contributes at least part of the C background. The Si acceptor concentration is negligible for the range of growth conditions that were used. Close compensation between the residual S donors and C acceptors may account for the high resistivity previously observed in undoped samples grown in this system using the purer As source. The PL data exhibit very weak "defect''-related emissions in the 1.504–1.512 and 1.466–1.482 eV ranges; evidence is presented supporting the existence of a correlation between these two sets of peaks, in agreement with the work of Briones and Collins.Temperature and excitation intensity-dependent PL measurements are used to demonstrate conclusively that the peaks in the 1.466–1.482 eV range are donor-to-acceptor and band-to-acceptor in nature, involving normal shallow donors and at least four different acceptor levels whose exact origin is unknown. The "defect'' peak intensity is larger in the less pure material which contains more C, implying that the "defects'' may be C related. Several electron traps including M1, M3, and M4 are observed in the DLTS spectra, and the C-V measurements give a total trap concentration of ∼3×1013 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336243
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  • 10
    Electronic Resource
    Electronic Resource
    Solid state amorphization at the room temperature deposited Ir/Si interface (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1204-1208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous Ir–Si layer of several nanometers thick on Si(100)2×1 deposited at room temperature has been characterized by using both low energy electron diffraction (LEED) and synchrotron photoemission techniques. The double domain Si(100)2×1 LEED pattern disappeared when the deposited Ir onto Si(100) was higher than 1 ML. The ultrathin amorphous Ir–Si layer consisted of three different IrxSiy alloys, rather than a single homogeneous IrxSiy alloy as predicted by the conventionally used Gibbs free energy calculation in the solid state amorphization. The growth of the amorphous Ir–Si layer on Si(100) strongly depended on the interaction between Ir and Si(100) at the initial stage of Ir deposition. Three types of Ir–Si bonding formed on Si(100) at 1 ML Ir coverage and gradually evolved to be three different amorphous IrxSiy alloys. The growth mode of the amorphous Ir–Si layer was proposed to be the modified Stranski–Krastanov growth. The transition from layer-by-layer-like to island growth occurred at Ir coverage of ∼3 ML. The major amorphous IrxSiy alloy switched from Si to Ir rich when Ir coverage is over ∼3 ML. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430885
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