Note: Cover -- Half Title -- Title Page -- Copyright Page -- Contents -- International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award -- Quantum Devices Award -- Young Scientist Award -- Preface -- Sponsors -- Symposium Committees -- Acknowledgements -- Chapter 1: Electronic Devices -- Progress in nitride-based microwave HEMTs -- Status of AlGaN/GaN HEMTs for microwave and power switching applications -- High speed InP-based heterojunction bipolar transistors -- High performance recessed gate AlGaN/GaN HEMTs -- Npn InGaN/GaN double heterojunction bipolar transistors with high common-emitter current gains -- High field-emission current density from heavily Si-doped AIN and AlxGa1-xΝ -- Emitter capacitance cancellation in ultrahigh-speed InP/GaAsSb/InP DHBTs with astaggerred ("type II") band lineup -- Device technology for high-yield and high-performance InP/InGaAs DHBTs -- A novel resonant tunneling logic gate capable of 100 fs/gate class operation -- High peak current density and low peak voltage strained Ino.9-o.8Gao.1-o.2As/AlAs RTD grown by metal organic chemical vapor deposition -- DC, RF and stability properties of high current density InGaAs tunnel diodes -- On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky barrier diodes -- Attractive potential around a buried metallic gate in a Schottky collector hot electron transistor -- Investigation of DLTS and low-frequency noise behaviour of In0.49Ga0.51P/Ino.22Ga0.78As p-HEMT grown by using a compound source MBE -- Sub 0.1 μm asymmetric Γ-gate PHEMT process using electron beam lithography -- 0.12μm gate length In0.52Alo.4sAs/In053Ga0.47As HEMTs on transferred substrate -- Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors with high A1 compositions. , Low-frequency noise characteristics of AlGaN/GaN HEMT -- Electroluminescence in AlGaN/GaN HEMTs -- A depletion-mode InP MOSFET with a liquid phase oxidized InGaAs gate -- Characteristics of depletion-mode In0.53Ga0.47As MOSFETs -- Depletion and accumulation mode operation of GaAs MISFETs with nm-thin gate insulating layers formed by UV & -- ozone process -- Image rejection mixer For WLAN application -- Multiband quantum transport with self-consistent scattering calculation based on Green's function method -- Chapter 2: Optical Devices -- Blue and violet vertical cavity light emitters and multielement arrays -- High efficiency multiple quantum well GalnNAs/GaNAs ridge-waveguide laser diode operating out to 1.4μm -- Low-noise quantum well infrared photodetectors for high-resolution thermal imaging -- Super high output power of 4.2 W in AlGalnN-based blue-violet laser diode array -- Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device -- High efficiency AlGalnP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength -- 340 nm-band bright UV-LEDs using quaternary InAlGaN active region -- 1.4 μm GalnNAs/GaAs quantum well laser grown by chemical beam epitaxy -- Single fundamental mode laser operation in microlensed vertical cavity surface emitting lasers -- Semiconductor Raman amplifiers for time gate demodulation in terabit optical communication system -- Generation of mid-infrared radiation in quantum well laser due to GaAs lattice nonlinearity -- Room temperature self-excited electronic Raman scattering by intersubband transitions in compressively strained InGaAs quantum-well lasers -- Characteristics of AlGaN quantum well light emitting diodes under large current operation -- High-efficiency monochromatic and white InGaN flip-chip dice. , Orange GalnN/GaN multi-quantum-well light-emitting diodes using a post-annealing technique -- Chapter 3: Magnetic Materials -- MOVPE growth experiments and magnetic characterization of (GaMn)As layer structures -- Growth and light-induced ferromagnetic properties of InMnAsSb/InSb heterostructure -- Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures -- Structural and magnetic properties of ferromagnetic MnAs films on GaAs(OOl) -- Spin injection with Fe/InAs hybrid structure -- Chapter 4: Novel Systems -- UHV-CVD growth of Si 1-x-yGexCy for device applications -- Vertical and lateral heterogeneous integration using direct wafer bonding -- Device characteristics of vertical field effect transistors with ultra-short InGaAs/GaAs channels -- Band anticrossing in highly mismatched compound semiconductor alloys -- Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy -- Temporary and permanent wafer bonding for reliable backside processing of compound semiconductor wafers -- Three-dimensional structuring using self-rolling of strained InGaAs/GaAs films -- Selective MBE growth of GaAs/AlGaAs nanowires on patterned GaAs (001) substrates and its application to hexagonal nanowire network formation -- A novel surface patterning using FIB and in-situ etching -- Novel fabrication method of semiconductor nano-electromechanical structures using controlled surface step distribution -- Chapter 5: Quantum Transport -- Transport properties in back-gated InAs/GaSb heterostructures -- Conductance fluctuations in quantum wires formed at spin-splitting narrow gap heterojunctions -- Magneto-transport properties of electrons in quantum wells with quasi-periodic interface corrugation -- Numerically evaluated exact properties of the conductance of regular and chaotic quantum cavities. , A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes -- Scattering processes of 2D electrons by charged quantum dots in n-AlGaAs/GaAs heterojunction channels with lOnm-scale embedded InGaAs islands -- Negative differential conductance of Ino.4Ga0.6As/GaAs(311)B laterally coupledquantum dots -- Chapter 6: Optical Characterization -- Nano seismology: acoutsic shock wave generation and terahertz emission from InGaN/GaN structures -- Time-resolved THz spectroscopy of miniband transport in biased GaAs/AlGaAs superlattices -- Ultrafast and large nonlinear optical response due to spatial structure of internal electric field in semiconductor thin film -- Modulation of PL recombination processes in N doped GaAs/A10.33Ga0.67As SQW by electric field -- Localized and resonant states of shallow acceptors in Ge/Ge1 -xSix multiple-quantum well heterostructures -- Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy -- Femto-second pump-probe study of the nonlinear transmission in an asymmetric triple quantum well structure -- Spatiotemporal imaging of nonequilibrium current during impact ionization avalanche in n-GaAs -- Description of eigen energy in deep quantum wells by narrow-gap band theory: InGaAs/InAlAs and InGaAs/AlAsSb system under Landau quantization -- Ionic screening effects on resonant light scattering by intersubband excitations in n type AlGaAs/GaAs heterojunctions -- Determination of the critical layer thickness of GaAs/InGaAs strained quantum wellsby scanning near-field optical spectroscopy -- A quasi-1-dimensional electron wave interference transistor with recess-etched grating structure fabricated by electron beam lithography. , Persistent photoconductivity under atmospheric pressure in uniformly doped η-GaAs prepared by intermittent injection of TMG and ASH3 -- Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures -- Ultra fine analysis of linear response of confined excitons in GaAs nano-layers -- Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands -- Optical studies of surface quantum well structures with intermediate-layer thicknesses -- Chapter 7: Quantum Nanostructures -- Quantum dots: lasers and amplifiers -- Single optical mode coupling of single quantum dot spontaneous emission -- Single photon emission from few particle states in InAs quantum dots -- Anti-Stokes photoluminescence and phonon broadening in self-assembled InAs/GaAs quantum dots -- Anomalous quantum confined Stark effects in vertically coupled InAs/GaAs self assembledquantum dots -- Biexciton formation in CdTe/Cd0.74Mg0.26Te quantum wires -- Stranski-Krastanov growth of (In,Ga)As quantum dots by controlling the wetting layer -- Size ordering effects of InAs quantum dots during a GaAs capping growth -- Luminescence properties of InAs dots grown by molecular beam epitaxy onmetamorphic InxAl1- xAs (0.33 ≤ x ≤ 0.52) buffer layers -- Carrier dynamics in spatially ordered InAs quantum dots -- Electro-optical effects in single and multi-stacked dots -- Quantum-confined Stark effect in InGaN pyramidal dots induced by the piezoelectric field -- Transport through InGaAs/GaAs(311)B quantum dots studied by conductive scanning probes -- Low temperature conductance fluctuations in coupled open dot systems -- Formation mechanism of ZnSe nanocrystals emitting whitish blue in water -- Strong band-edge emission from surface modified CdS quantum dots prepared by a colloidal method. , Modulation dynamics of red-emitting quantum dot lasers.