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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 755-760 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified version of the specific contact resistance measurement scheme of G. K. Reeves [Solid State Electronics 23, 487 (1980)] has been developed. Its applicability to semiconducting diamond is demonstrated using four sample types: epitaxial films doped to mid 1019 acceptors/cm3 on 〈100〉 and 〈110〉 type IIa substrates; type IIb diamonds 0.25 mm thick, and type IIb diamonds thinned to 0.035–0.05 mm thick. The ohmic contacts were based on a solid-state annealing process using carbide forming metals. The measured specific contact resistance depends mainly on the doping level in the diamond. Measured values ranged from 8×10−6 Ω cm2 for heavily doped films to 1×10−2 Ω cm2 for lightly doped bulk samples. A simple analysis shows that the contacts to highly doped layers are suitable for device applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 953-955 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the observation of surface segregation of gold from AuxSi1−x alloys with 0.25〈x〈0.5. In view of the observed Au segregation and the known ability of gold-rich alloys to oxidize readily at low temperature, we propose a mechanism for oxidation of silicon in AuxSi1−x alloys with 0.4〈x〈0.7.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2020-2022 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical waveguides fabricated by argon ion mixing in InGaAs/InP superlattice structures grown by low-pressure metalorganic chemical vapor deposition are demonstrated for the first time. Implantation of argon ions at ∼400 °C eliminates the need for a high-temperature post-anneal to induce the compositional disordering. As-grown and argon-implanted samples were studied using x-ray diffraction and optical absorption measurements. Planar buried rib waveguides operating at a 1.5 μm wavelength are fabricated by selective ion implantation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2300-2306 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relative importance between the thermodynamical driving force and kinetics in thermal annealing and ion mixing in the thermally activated regime has not been clarified. To probe the role of the thermodynamical driving force in reactions between metals and silicon, the Co-Si system was chosen for investigation. In general, three silicide phases are formed during thermal annealing of samples consisting of Co thin films deposited on Si substrates, i.e., Co2Si (the first phase to form with a heat of formation, ΔHf=−9 kcal/g atoms), CoSi (ΔHf=−12 kcal/g atoms), and CoSi2 (the last phase to form, with ΔHf=−8.2 kcal/g atoms). Previous experiments have shown that annealing a sample of Si/CoSi/Co converts CoSi into Co2Si instead of a continuous growth of CoSi. This type of reaction is apparently unrelated to the magnitude of the thermodynamical driving force since ΔHf of CoSi is significantly larger than those of Co2Si and CoSi2, but is kinetically restricted instead. Under ion mixing conditions the kinetic restriction is expected to relax due to enhanced atomic mobilities under ion irradiation; the ion-induced reactions should then be driven by thermodynamics; i.e., growth of the phase with the largest ΔHf is favored. In this work, phase formation induced thermally and with ion mixing in the Co-Si system was investigated using Rutherford backscattering spectrometry and x-ray diffraction (Read camera). It was found that in thermal annealing, Co2Si is the first phase to form and Co is the dominant moving species in the formation of Co2Si, in agreement with previous results. In ion mixing, both CoSi and Co2Si are observed to form. At low temperatures, the formation of CoSi dominates. As the substrate temperature is increased, the formation of Co2Si becomes more significant. Co and Si are found to be the dominant moving species in the ion-beam-assisted formation of Co2Si and CoSi, respectively. By introducing the concept of an effective heat of formation, initial phase formation in both ion mixing and thermal annealing can be rationalized in terms of the thermodynamical driving force.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 212-214 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The accuracy of lattice parameter determinations by Read camera x-ray diffraction is shown to be strongly dependent on camera alignment. Alignment of the Read camera eliminates the main sources of error. Further improvement in analysis was achieved by constructing a collimator with a rectangular cross section. Analysis and testing showed that the rectangular collimator enhances the efficiency, resolution, precision, and peak-to-background intensity ratio for x-ray analysis of thin films using the Read camera.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1089-1096 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transformations in a number of ion-implanted and subsequently annealed silicides have been investigated. The electrical resistance change as a function of 28Si+ ion implantation has been found to correlate with the presence of a disordered state in the silicide. Epitaxial silicides such as CoSi2 were found to regrow in a layer by layer manner when implanted such that the top region was amorphous but with a single-crystal seed remaining at the bottom of the original layer. Recrystallization temperatures (defined as the temperature at which one half of the silicide has transformed) were determined by in situ electrical measurements as well as by x-ray diffraction studies. Recrystallization temperatures were found to be approximately 1/3 of the silicide melting point. Both cosputtered and implanted refractory metal silicides were also found to be governed by this rule. Under the assumption that recrystallization can be described by the Avrami equation, it was found that n, the mode of transformation index, was equal to or less than 3 for a number of crystalline silicides. We interpret this as possible evidence that a crystalline silicide is not completely amorphized by ion implantation, although the size of the crystalline nuclei may be below the conventional transmission electron microscopy resolution limit.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 524-527 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low dose ion implantation through the Pt/Si silicon interface prior to annealing has been shown to yield a more planar PtSi/Si interface after annealing. The electrical characteristics of these ion mixed diodes have also been shown to be more uniform from device to device as well as more nearly approaching theoretical performance than conventionally prepared diodes.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1826-1830 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy was used to analyze the oxide grown at low temperature on AuxSi1−x films. It was found that the oxide is stoichiometric SiO2, but is structurally distinct from oxides grown on Si at high temperatures (950 °C). Also, unoxidized Au-Si atom inclusions were observed in the oxide. The composition of the inclusions is dependent on the initial bulk AuxSi1−x composition.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1814-1819 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the motion of semiconductors during ion mixing was investigated by studying both the temperature and the atomic mass dependence of moving species in the GexSi1−x/Ni and the GexSi1−x/Pd systems. Ion mixing was performed with 280-keV Ar ions at temperatures between 30 K and room temperature. The atomic mass of the GexSi1−x alloy was adjusted by changing the concentration of Ge in the alloy. In thermally induced reactions, no preferential motion of Si or Ge was observed. During ion mixing, the atomic flux of Si was observed to be enhanced compared to that of Ge. The atomic flux of the sum of Si and Ge to metal decreases with increasing substrate temperature during mixing and with increasing Ge concentration in the GexSi1−x alloy. From the strong atomic mass dependence of the moving species during ion mixing it is concluded that the origin of the motion of semiconductors under ion mixing conditions is due to the effects of secondary recoils.
    Type of Medium: Electronic Resource
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